SOT-23 Plastic-Encapsulate Transistors WT MMBT5551LT1 TRANSISTOR (NPN) 1.BASE 2.EMITTER 3.COLLECTOR im we Power dissipation Pcm: 0.3W (Tamb=25C ) Collector current Icm: 0.6A Coilector-base voltage Viar)cBo: 180V Operating and storage junction temperature range Ty, Tstg :-55 "C to+150C UNIT: mm ELECTRICAL CHARACTERISTICS (Tamp=25C unless otherwise specified) Collector-base breakdown voltage ViBR)CBO ic=100H A, le=0 180 Vv Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, |ls=0 160 Vv Emitter-base breakdown voltage V(BR)JEBO fe=10n A, ip=0 6 Vv Collector cut-off current Ics0 VcB=120V,le=0 0.05 HA Emitter cut-off current lego Ves=4V,Ic=OmA 0.05 BA HFE(1) Vce=5V,ic=1mA 80 DC current gain HFE(2) Vce=5V,1c=10mA 100 200 hFE(3) VcE=5V,ic=50mA 50 Collector-emitter saturation voltage VcEsat 1c=50mA,IB=5MA 0.5 Vv Base-emitter saturation voltage VBEsat ic=50mA,ip=5mA 1 Vv Transition frequency ft Vce=5V,Ic=10mA,f=30MHz 100 MHz DEVICE MARKING : MMBTS551LT1=G1195 Typical Characteristics hre DC CURRENT GAIN Vce COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 300 200 100 50 30 20 10 7.0 5.0 0.1 0 0.005 Ts =125 25 55 02 O03 05 O07 1.0 2.0 3.0 5.0 7.0 10 i COLLECTOR CURRENT (mA) DC current Gain 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 Ia BASE CURRENT (mA) Collector Saturation Region MCC. MMBT5551LT1 VcE= 1.0V meee VOE= 5.0V i ! 20 30 50 70 =100 5.0 10 20 50