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Is Now Part of
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2002 Fairchild Semiconductor Corporation Rev. B, September 2002
BD676A/678A/680A/682
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulse
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BD676A
: BD678A
: BD680A
: BD682
- 45
- 60
- 80
- 100
V
V
V
V
VCEO Collector-Emitt er Voltage : BD676A
: BD678A
: BD680A
: BD682
- 45
- 60
- 80
- 100
V
V
V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 4 A
ICP *Collector Current (Pulse) - 6 A
IB Base Current - 100 mA
PC Collector Dissipation (TC=25°C) 14 W
Rθja Thermal Resistance (Junction to Ambient) 88 °C/W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: BD676A
: BD678A
: BD680A
: BD682
IC = - 50mA, IB = 0 - 4 5
- 60
- 80
- 100
ICBO Collector-Base Voltage : BD676A
: BD678A
: BD680A
: BD682
VCB = - 45V, IE = 0
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCB = - 100V, VBE = 0
- 200
- 200
- 200
- 200
µA
µA
µA
µA
ICEO Collector Cut-off Current : BD676A
: BD678A
: BD680A
: BD682
VCE = - 45V, VBE = 0
VCE = - 60V, VBE = 0
VCE = - 80V, VBE = 0
VCE = - 100V, VBE = 0
- 500
- 500
- 500
- 500
µA
µA
µA
µA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 2 m A
hFE * DC Current Gain : BD676A/678A/680A
: BD682 VCE = - 3V, IC = - 2A
VCE = - 3V, IC = - 1. 5A 750
750
VCE(sat) * Collector-Emitter Saturation Voltage
: BD676A/678A/680A
: BD682 IC = - 2A, IB = - 40mA
IC = - 1.5A, IB = - 3 0mA
- 2.8
- 2.5 V
V
VBE(on) * Base-Emitter On Voltage : BD676A/678A/680A
: BD682 VCE = - 3V, IC = - 2A
VCE = - 3V, IC = - 1. 5A - 2.5
- 2.5 V
V
BD676A/678A/680A/682
Medium Power Linear and Switching
Applications
• Medium Power Darlington TR
• Complement to BD675A, BD677A, BD679A and BD681 respectively
1TO-126
1. Emitter 2.Collector 3.Base
©2002 Fairchild Semiconductor Corporation
BD676A/678A/680A/682
Rev. B, September 2002
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area
Figure 5. Power Derating
-0.1 -1 -10
100
1000
10000
VCE = -3V
hFE, DC CURRENT GAIN
IC[A], COLLECTO R CURRENT
-0.1 -1 -10
-0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4 IC = 250 IB
VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
-0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
-3.6
-4.0 VCE = 3V
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100 -1000
-0.1
-1
BD678A
10µs
IC(max). Pulsed
BD682
BD680A
BD676A
100µs
1ms
10ms
DC
IC(max). Continuous
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
4
8
12
16
20
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Package Dimensions
BD676A/678A/680A/682
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B, September 2002
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2002 Fairchild Semiconductor Corporation Rev. I1
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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