
BL Galaxy Electrical Production specification
NPN General Purpose Amplifier MMBT2222A
Document number: BL/SSSTC071 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10μA IE=0 75 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10μA IC=0 6 V
Collector cut-off current ICBO VCB=60V IE=0 0.01 μA
Collector cut-off current ICEX VCE=60V,VEB(off)=3.0V 0.01 μA
Emitter cut-off current IEBO VEB=3V IC=0 0.01 μA
VCE=10V IC=150mA 100 300
VCE=10V IC=0.1mA 35
VCE=10V IC=1.0mA 50
VCE=10V IC=10mA 75
VCE=10V IC=500mA 40
DC current gain hFE
VCE=1V IC=150mA 50
Collector-emitter saturation voltage VCE(sat)
IC=500mA IB=50mA
IC=150mA IB=15mA 1.0
0.3 V
Base-emitter saturation voltage VBE(sat)
IC=500mA IB=50mA
IC=150mA IB=15mA 0.6
2.0
1.2 V
Transition frequency fT
VCE=20V IC=20mA
f=100MHz 300 MHz
Output capacitance Cobo VCB=10V,IE=0,f=1.0MHz 8.0 pF
Input capacitance Cibo VEB=0.5V,IC=0,
f=1.0MHz 25 pF
Delay time td 10 ns
Rise time tr
Vcc=30V, VBE(off)=-0.5V
IC=150mA , IB1= 15mA 25 ns
Storage time ts 225 ns
Fall time tf
VCC=30V, IC=150mA
IB1=-IB2=15mA 60 ns