2000. 2. 28 1/2
SEMICONDUCTOR
TECHNICAL DATA
BC817
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌComplementary to BC807.
MAXIMUM RATING (Ta=25ᴱ)
DIM MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
Note : hFE Classification 16:100ᴕ250 , 25:160ᴕ400 , 40:250ᴕ630
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=20V, IE=0 - - 0.1 ỌA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 ỌA
DC Current Gain (Note)
hFE(1) VCE=1V, IC=100mA 100 - 630
hFE(2) VCE=1V, IC=500mA 40 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 0.7 V
Base-Emitter Voltage VBE VCE=1V, IC=500mA - - 1.2 V
Transition Frequency fTVCE=5V, IC=10mA, f=100MHz 100 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 5 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC800 mA
Emitter Current IE-800 mA
Collector Power Dissipation PC*350 mW
Junction Temperature Tj150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
TYPE BC817-16 BC817-25 BC817-40
MARK 6A 6B 6C
* : Package Mounted On 99.9% Alumina 10ᴧ8ᴧ0.6mm.
MARK SPEC
Type Name
Marking
Lot No.
2000. 2. 28 2/2
BC817
Revision No : 2
C
COLLECTOR CURRENT I (mA)
0
P (mW)
C
0
AMBIENT TEMPERATURE Ta ( C)
C
P - Ta
10
DC CURRENT GAIN hFE
1k30031
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CEC
I - V (LOW VOLTAGE REGION)
h - I
1
COLLECTOR CURRENT I (mA)
C
0.2
BASE-EMITTER VOLTAGE V (V)
BE
I - V
STATIC CHARACTERISTICS
B
BASE CURRENT
0.8
1.0
I (mA)
C
V - I
C
COLLECTOR CURRENT I (mA)
1 3 300 1k
0.01
CE(sat)
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENTBASE-EMITTER
BE
VOLTAGE V (V)
I (mA) VOLTAGE V (V)
COLLECTOR-EMITTER
CE
0.6 0.4 0.2 0 10 20 30 40
0.8
0.6
0.4
0.2
0
200
400
600
800
1k
COMMON
EMITTER
Ta=25 C
9
876
54
3
2
I =1mA
0
B
V =1V
CE
CE
V =1V
123456
200
400
600
800
1000
1200
8
7
6
5
4
3
2
0
I =1mA
B
CBE
0.4 0.6 0.8 1.0
3
10
30
100
300
1k
5k
COMMON EMITTER
V =1V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
FE C
1003010
30
100
300
1k
3k
50
500
COMMON EMITTER
V =1V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
CE(sat) C
VOLTAGE V (V)
1003010
0.03
0.1
0.3
1
3COMMON EMITTER
I /I =25
CB
Ta=100 C
Ta=25 C
Ta=-25 C
CE
V =5V
COMMON EMITTER
500
100
30
10 30 100
TRANSITION FREQUENCY
C
T
T
10
1k30031
COLLECTOR CURRENT I (mA)
C
f - I
f (MHz)
300 Ta=25 C
COLLECTOR POWER DISSIPATION
25 50 75 100 125 150 175
0
100
200
300
10
COMMON EMITTER
Ta=25 C
Ta=100 C
