BAR 42 BAR 43, A, C, S SMALL SIGNAL SCHOTTKY DIODES K A K1 N.C. A K2 BAR42/BAR43 BAR43A A1 K2 K A1 DESCRIPTION K1 A2 General purpose metal to silicon diodes featuring very low turn-on voltage and fast switching. A2 BAR43C BAR43S SOT-23 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol VRRM IF Parameter Value Unit Repetitive peak reverse voltage 30 V Continuous forward current 100 mA IFSM Surge non repetitive forward current tp=10ms sinusoidal 750 mA Ptot Power dissipation (note 1) Tamb = 25C 250 mW Tstg Maximum storage temperature range - 65 to +150 C Tj Maximum operating junction temperature * 150 C TL Maximum temperature for soldering during 10s 260 C Note 1: for double diodes, Ptot is the total power dissipation of both diodes. * : dPtot 1 < thermal runaway condition for a diode on its own heatsink dTj Rth( j - a ) THERMAL RESISTANCE Symbol Rth(j-a) Test conditions Junction-ambient * Value Unit 500 C/W * Mounted on epoxy board with recommended pad layout. June 2000 - Ed: 2B 1/4 BAR 42/BAR 43, A, C, S ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR Tj = 25C VF * Test Conditions Min. IR = 100A 30 BAR 42 Tj = 25C BAR 43 All IR ** Tj = 25C Typ. Max. V IF = 10 mA 0.35 0.4 IF = 50 mA 0.5 0.65 IF = 2 mA Unit 0.26 V 0.33 IF = 15 mA 0.45 IF = 100 mA 1 VR = 25V Tj = 100C 500 nA 100 A Max. Unit 5 pF ns Pulse test: * tp = 380s, < 2% ** tp = 5 ms, <2% DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. C trr Tj = 25C Tj = 25C Irr = 1mA VR = 1V IF = 10 mA RL = 100 F = 1MHz IR = 10 mA * Tj = 25C F = 45Mhz RL = 50 K Vi = 2V CL = 300 pF for BAR 43 Typ. 7 80 % * Detection effeciency Fig. 1-1: Forward voltage drop versus forward current (typical values, low level). Fig. 1-2: Forward voltage drop versus forward current (typical values, high level). IFM(A) IFM(A) 5E-1 2.00E-2 1.80E-2 Tj=100C Tj=100C 1.60E-2 1E-1 1.40E-2 Tj=25C 1.20E-2 Tj=50C 1.00E-2 8.00E-3 6.00E-3 Tj=50C 1E-2 Tj=25C 4.00E-3 2.00E-3 VFM(V) 0.00E+0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 2/4 VFM(V) 1E-3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 BAR 42/BAR 43, A, C, S Fig. 2: Reverse leakage current versus reverse voltage applied (typical values). Fig. 3: Reverse leakage current versus junction temperature. IR(A) IR(A) 1E+4 1E+2 VR=30V Tj=100C 1E+3 1E+1 1E+2 1E+0 1E+1 Tj=50C 1E+0 Tj=25C 1E-1 1E-1 Tj(C) VR(V) 1E-2 0 5 10 15 20 25 30 Fig. 4: Junction capacitance versus reverse voltage applied (typical values). C(pF) 1E-2 0 25 50 75 100 125 150 Fig. 5: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy FR4 with recommendedpad layout, e(Cu)=35m). Zth(j-a)/Rth(j-a) 10 1.00 F=1MHz Tj=25C = 0.5 5 = 0.2 0.10 = 0.1 2 T Single pulse VR(V) tp(s) 1 1 2 5 10 20 30 0.01 1E-3 1E-2 1E-1 =tp/T 1E+0 1E+1 tp 1E+2 Fig. 6: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35m). Rth(j-a) (C/W) 350 P=0.25W 300 250 200 S(Cu) (mm ) 150 0 5 10 15 20 25 30 35 40 45 50 3/4 BAR 42/BAR 43, A, C, S PACKAGE MECHANICAL DATA SOT-23 (Plastic) A E REF. e D e1 B S A1 L H c A A1 B c D e e1 E H L S DIMENSIONS Millimeters Inches Min. Max. Min. Max. 0.89 1.4 0.035 0.055 0 0.1 0 0.004 0.3 0.51 0.012 0.02 0.085 0.18 0.003 0.007 2.75 3.04 0.108 0.12 0.85 1.05 0.033 0.041 1.7 2.1 0.067 0.083 1.2 1.6 0.047 0.063 2.1 2.75 0.083 0.108 0.6 typ. 0.024 typ. 0.35 0.65 0.014 0.026 FOOT PRINT DIMENSIONS 0.9 0.035 1.1 0.043 0.9 0.035 2.35 0.92 1.9 0.075 mm inch 1.1 0.043 1.45 0.037 0.9 0.035 Ordering type Marking Package Weight Base qty Delivery mode BAR42 D94 SOT-23 0.01g 3000 Tape & reel BAR43 D95 SOT-23 0.01g 3000 Tape & reel BAR43A DB1 SOT-23 0.01g 3000 Tape & reel BAR43C DB2 SOT-23 0.01g 3000 Tape & reel BAR43S DA5 Epoxy meets UL94,V0 SOT-23 0.01g 3000 Tape & reel Information furnished is believed to be accurate and reliable. However,STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4