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Page <1> V1.020/12/12
PNP Power Darlington Transistor
Absolute Maximum Ratings
Parameter Symbol BD682 Unit
Collector Base Voltage VCBO 100
VCollector Emitter Voltage VCEO
Emitter Base Voltage VEBO 5
Collector Current IC4
A
Base Current IB0.1
Total Power Dissipation at Ta = 25°C
Derate above 25°C PD
1.25
10
W
mW/°C
Total Power Dissipation at TC = 25°C
Derate above 25°C
40
0.32 W W/°C
Operating and Storage Junction
Temperature Range Tj, Tstg -55 to +150 °C
Thermal Resistance
Junction to Case Rth (j-c) 3.13
°C/W
Junction to Ambient in Free Air Rth (j-a) 100
Pin Conguration:
1. Emitter
2. Collector
3. Base
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Page <2> V1.020/12/12
PNP Power Darlington Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
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Description Part Number
Darlington Transistor, TO-126 BD682
Part Number Table
Electrical Characteristics (Tc = 25°C unless specied otherwise)
*Pulse Test : Pulse Width = ≤300μs, Duty Cycle = ≤2%.
Dimensions Min. Max.
A 7.4 7.8
B 10.5 10.8
C 2.4 2.7
D 0.7 0.9
E 2.25 (Typical)
F 0.49 0.75
G 4.5 (Typical)
L 15.7 (Typical)
M 1.27 (Typical)
N 3.75 (Typical)
P 3 3.2
S 2.5 (Typical)
Dimensions : Millimetres
Parameter Symbol Test Condition Min. Max. Unit
Collector Emiiter Voltage VCEO* IC = 50mA, IB = 0 100 - V
Collector Cut off Current
ICEO
ICBO
ICBO
VCE = Half Rated VCEO, IB = 0
VCB = Rated VCBO, IE = 0
VCB = Rated VCBO, IE = 0
TC = 100°C
-
500
0.2
2
µA
mA
mA
Emitter Cut off Current IEBO VEB = 5V, IC = 0 - 2 mA
Collector Emitter Saturation Voltage NON A VCE (sat)* IC = 1.5A, IB = 6mA -
2.5 V
Base Emitter On Voltage NON A VEB (on)* IC = 1.5A, VCE = 3V -
DC Current Gain NON A hFE* IC = 1.5A, VCE = 3V 750 - -
Small Signal Current Gain |hfe|IC = 1.5A, VCE = 3V
f = 1MHz 1 - -
Pin Conguration:
1. Emitter
2. Collector
3. Base