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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMC7660DC N-Channel Dual CoolTM 33 PowerTrench(R) MOSFET 30 V, 40 A, 2.2 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench(R) process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Max rDS(on) = 2.2 m at VGS = 10 V, ID = 22 A Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 18 A High performance technology for extremely low rDS(on) SyncFET Schottky Body Diode Applications RoHS Compliant Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Pin 1 S S S G D Top Dual CoolTM 33 D D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S Bottom MOSFET Maximum Ratings TA= 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 C -Continuous (Silicon limited) TC = 25 C -Continuous TA = 25 C Ratings 30 Units V 20 V 40 150 (Note 1a) 30 -Pulsed A 200 EAS Single Pulse Avalanche Energy (Note 3) 220 mJ dv/dt Peak Diode Recovery dv/dt (Note 5) 1.0 V/ns (Note 1a) 3.0 PD TJ, TSTG Power Dissipation TC = 25 C Power Dissipation TA = 25 C 78 Operating and Storage Junction Temperature Range -55 to + 150 W C Thermal Characteristics RJC Thermal Resistance, Junction to Case (Top Source) 4.3 RJC Thermal Resistance, Junction to Case (Bottom Drain) 1.6 RJA Thermal Resistance, Junction to Ambient (Note 1a) 42 RJA Thermal Resistance, Junction to Ambient (Note 1b) 105 RJA Thermal Resistance, Junction to Ambient (Note 1i) 17 RJA Thermal Resistance, Junction to Ambient (Note 1j) 26 RJA Thermal Resistance, Junction to Ambient (Note 1k) 12 C/W Package Marking and Ordering Information Device Marking 7660 Device FDMC7660DC (c)2011 Fairchild Semiconductor Corporation FDMC7660DC Rev.1.3 Package Dual CoolTM 33 1 Reel Size 13'' Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC7660DC N-Channel Dual CoolTM 33 PowerTrench(R) MOSFET July 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 A IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 2.5 V 30 V 15 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 A, referenced to 25 C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.2 2 -7 mV/C VGS = 10 V, ID = 22 A 1.6 2.2 VGS = 4.5 V, ID = 18 A 2.5 3.3 VGS = 10 V, ID = 22 A, TJ = 125C 2.2 3.3 VDS = 5 V, ID = 22 A 147 m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1MHz 3885 5170 pF 1215 1620 pF 100 150 pF 0.7 1.5 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time 17 31 VDD = 15 V, ID = 22 A, VGS = 10 V, RGEN = 6 6.6 13 ns 36 58 ns tf Fall Time 5 10 ns Qg Total Gate Charge VGS = 0 V to 10 V 54 76 nC VGS = 0 V to 4.5 V VDD = 15 V, ID = 22 A 24 34 13 nC 5.5 nC Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge (c)2011 Fairchild Semiconductor Corporation FDMC7660DC Rev.1.3 VGS = 0 V, IS = 22 A (Note 2) 0.8 1.2 VGS = 0 V, IS = 1.9 A (Note 2) 0.7 1.2 IF = 22 A, di/dt = 100 A/s 2 V 43 69 ns 24 38 nC www.fairchildsemi.com FDMC7660DC N-Channel Dual CoolTM 33 PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted RJC Thermal Resistance, Junction to Case (Top Source) 4.3 RJC Thermal Resistance, Junction to Case (Bottom Drain) 1.6 RJA Thermal Resistance, Junction to Ambient (Note 1a) 42 RJA Thermal Resistance, Junction to Ambient (Note 1b) 105 RJA Thermal Resistance, Junction to Ambient (Note 1c) 29 RJA Thermal Resistance, Junction to Ambient (Note 1d) 40 RJA Thermal Resistance, Junction to Ambient (Note 1e) 19 RJA Thermal Resistance, Junction to Ambient (Note 1f) 23 RJA Thermal Resistance, Junction to Ambient (Note 1g) 30 RJA Thermal Resistance, Junction to Ambient (Note 1h) 79 RJA Thermal Resistance, Junction to Ambient (Note 1i) 17 RJA Thermal Resistance, Junction to Ambient (Note 1j) 26 RJA Thermal Resistance, Junction to Ambient (Note 1k) 12 RJA Thermal Resistance, Junction to Ambient (Note 1l) 16 C/W NOTES: 1. RJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RJC is guaranteed by design while RCA is determined by the user's board design. b. 105 C/W when mounted on a minimum pad of 2 oz copper a. 42 C/W when mounted on a 1 in2 pad of 2 oz copper c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. EAS of 220 mJ is based on starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 21 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 33.5 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. 5. ISD 22 A, di/dt 100 A/s, VDD BVDSS, Starting TJ = 25 oC. (c)2011 Fairchild Semiconductor Corporation FDMC7660DC Rev.1.3 3 www.fairchildsemi.com FDMC7660DC N-Channel Dual CoolTM 33 PowerTrench(R) MOSFET Thermal Characteristics 200 4 VGS = 6 V VGS = 8 V ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V 150 VGS = 4.5 V 100 VGS = 4 V 50 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 0.0 0.2 0.4 0.6 0.8 VGS = 4 V 3 VGS = 4.5 V 2 VGS = 6 V 1 0 1.0 0 Figure 1. On Region Characteristics 50 100 ID, DRAIN CURRENT (A) rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 200 15 ID = 22 A VGS = 10 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID = 22 A 10 5 TJ = 125oC TJ = 25 oC 0 100 125 150 2 4 TJ, JUNCTION TEMPERATURE (oC) IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VDS = 3 V TJ = 150 oC 100 TJ = 25 oC 50 TJ = -55 oC 3.0 3.5 4.0 500 10 VGS = 0 V 100 TJ = 150 oC 10 TJ = 25 oC 1 TJ = -55 oC 0.1 0.2 4.5 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics (c)2011 Fairchild Semiconductor Corporation FDMC7660DC Rev.1.3 8 Figure 4. On-Resistance vs Gate to Source Voltage 200 2.5 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 150 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 0 2.0 VGS = 10 V VGS = 8 V VDS, DRAIN TO SOURCE VOLTAGE (V) 150 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDMC7660DC N-Channel Dual CoolTM 33 PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 6000 ID = 22 A Ciss 8 VDD = 10 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 15 V VDD = 20 V 4 2 1000 100 10 20 30 40 50 f = 1 MHz VGS = 0 V Crss 50 0.1 0 0 Coss 60 1 10 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 160 30 o ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) VGS = 10 V TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC RJC = 1.6 C/W 120 VGS = 4.5 V 80 40 Limited by Package 1 0.01 0.1 1 10 0 25 100 300 50 100 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 4 500 P(PK), PEAK TRANSIENT POWER (W) 10 100 100 us 10 1 ms 10 ms 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s RJA = 105 oC/W 10s DC TA = 25 oC 0.01 0.01 0.1 1 10 100 TA = 25 oC 2 10 10 1 0.2 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area (c)2011 Fairchild Semiconductor Corporation FDMC7660DC Rev.1.3 SINGLE PULSE RJA = 105 oC/W 3 10 Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDMC7660DC N-Channel Dual CoolTM 33 PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 0.001 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE o RJA = 105 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve (c)2011 Fairchild Semiconductor Corporation FDMC7660DC Rev.1.3 6 www.fairchildsemi.com FDMC7660DC N-Channel Dual CoolTM 33 PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 3.30 3.40 2.37 MIN A PKG CL B 8 5 8 SYM CL KEEP OUT AREA 5 (0.45) 2.15 MIN PKG CL 3.30 PKG CL (0.40) 0.70 MIN (0.65) 1 4 1 SEE DETAIL 'A' 4 0.65 0.42 MIN 1.95 LAND PATTERN RECOMMENDATION 0.10 C A B 1.95 0.65 0.320.05 1 4 0.400.10 (0.20) PKG CL 3.300.10 2.000.10 (0.39) 8 0.52 5 (2.27) 3.300.10 0.10 C 1.000.05 0.08 C 0.05 0.00 0.200.025 SCALE: 2X C SEATING PLANE NOTES: UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. BA, DATED OCTOBER 2002. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. 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