MBR0530T1, MBR0530T3 Preferred Devices Surface Mount Schottky Power Rectifier Plastic SOD-123 Package The MBR0530T1/3 uses the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. These state-of-the-art devices have the following features: Features * * * * * * Guardring for Stress Protection Low Forward Voltage 125C Operating Junction Temperature Epoxy Meets UL 94, V-0 @ 0.125 in Package Designed for Optimal Automated Board Assembly Pb-Free Packages are Available * Reel Options: * SCHOTTKY BARRIER RECTIFIER 0.5 AMPERES 30 VOLTS SOD-123 CASE 425 STYLE 1 Mechanical Characteristics * * * * http://onsemi.com MBR0530T1 = 3,000 per 7 in reel / 8 mm tape Reel Options: MBR0530T3 = 10,000 per 13 in reel / 8 mm tape Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds MARKING DIAGRAM B3 M G G B3 = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) MAXIMUM RATINGS Symbol Value Unit ORDERING INFORMATION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 30 V See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Average Rectified Forward Current (Rated VR, TL = 100C) IF(AV) 0.5 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 5.5 A Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ -65 to +125 C 1000 V/ms > 400 > 8000 V Voltage Rate of Change (Rated VR) ESD Rating: Machine Model = C Human Body Model = 3B dv/dt Preferred devices are recommended choices for future use and best overall value. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. (c) Semiconductor Components Industries, LLC, 2006 May, 2006 - Rev. 4 1 Publication Order Number: MBR0530T1/D MBR0530T1, MBR0530T3 THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance - Junction-to-Ambient (Note 1) RqJA 206 C/W Thermal Resistance - Junction-to-Lead RqJL 150 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) (iF = 0.1 Amps, TJ = 25C) (iF = 0.5 Amps, TJ = 25C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25C) (VR = 15 V, TC = 25C) IR V 0.375 0.43 mA 130 20 104 TJ = 125C 75C 25C I R, REVERSE CURRENT (A) 1 -40 C 0.1 TJ = 125C 1000 100 75C 10 25C 1 0.01 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0 5 10 15 20 25 30 vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current 180 160 C, CAPACITANCE (pF) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. TYPICAL CAPACITANCE AT 0 V = 170 pF 140 120 100 80 60 40 20 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance http://onsemi.com 2 25 30 35 40 MBR0530T1, MBR0530T3 0.875 P F(AV), AVERAGE POWER DISSIPATION (WATT) AVERAGE FORWARD CURRENT (AMP) 1 DC 0.75 0.625 SQUARE WAVE 0.5 =p 0.375 =5 0.25 = 10 0.125 Ipk/Iav = 20 0 60 67 74 81 88 95 102 109 116 123 130 0.35 0.315 TJ = 125C SQUARE WAVE 0.28 DC =p 0.245 =5 = 10 0.21 Ipk/Iav = 20 0.175 0.14 0.105 0.07 0.035 0 0 0.1 0.2 0.3 0.4 0.5 0.6 LEAD TEMPERATURE (C) IF(AV), AVERAGE FORWARD CURRENT (AMP) Figure 4. Current Derating (Lead) Figure 5. Power Dissipation 0.7 0.8 ORDERING INFORMATION Package Shipping MBR0530T1 SOD-123 3000 / Tape & Reel MBR0530T1G SOD-123 (Pb-Free) 3000 / Tape & Reel MBR0530T3 SOD-123 10,000 Tape & Reel MBR0530T3G SOD-123 (Pb-Free) 10,000 Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 MBR0530T1, MBR0530T3 PACKAGE DIMENSIONS SOD-123 CASE 425-04 ISSUE E D AAAA AAAA AAAA A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A1 1 HE MILLIMETERS DIM MIN NOM MAX A 0.94 1.17 1.35 A1 0.00 0.05 0.10 b 0.51 0.61 0.71 --- --- c 0.15 D 1.40 1.60 1.80 E 2.54 2.69 2.84 HE 3.56 3.68 3.86 --- --- L 0.25 STYLE 1: PIN 1. CATHODE 2. ANODE E L 2 MIN 0.037 0.000 0.020 --- 0.055 0.100 0.140 0.010 INCHES NOM 0.046 0.002 0.024 --- 0.063 0.106 0.145 --- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --- C b SOLDERING FOOTPRINT* EE EE EE 0.91 0.036 2.36 0.093 4.19 0.165 EE EE EE SCALE 10:1 1.22 0.048 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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