© 2006 IXYS All rights reserved 1 - 4
0648
IXBH 40N160
IXYS reserves the right to change limits, test conditions and dimensions.
Features
• International standard package
JEDEC TO-247 AD
• High Voltage BIMOSFETTM
- replaces high voltage Darlingtons
and series connected MOSFETs
- lower effective RDS(on)
• Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
• MOS Gate turn-on
- drive simplicity
• Intrinsic diode
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• CRT deflection
• Lamp ballasts
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
TO-247 AD
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
C (TAB)
Symbol Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 1600 V
VCGR TJ = 25°C to 150°C; RGE = 1 MΩ1600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25°C 33 A
IC90 TC = 90°C 20 A
ICM TC = 25°C, 1 ms 40 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 22 Ω VCE = 0.8·VCES ICM = 40 A
(RBSOA) Clamped inductive load, L = 100 µH
PCTC = 25°C 350 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in) from case for 10 s 300 °C
MdMounting torque 1.15/10Nm/lb.in.
Weight 6g
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 1 mA, VGE = 0 V 1600 V
VGE(th) IC= 2 mA, VCE = VGE 48V
ICES VCE = 0.8·VCES TJ = 25°C 400 µA
VGE = 0 V TJ = 125°C 3 mA
IGES VCE = 0 V, VGE = ±20 V ± 500 nA
VCE(sat) IC= IC90, VGE = 15 V 6.2 7.1 V
TJ = 125°C 7.8 V
High Voltage BIMOSFETTM
Monolithic Bipolar
MOS Transistor
N-Channel, Enhancement Mode
IC25 =33A
VCES = 1600 V
VCE(sat) = 6.2 V typ.
tfi =40ns
C
E
G
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© 2006 IXYS All rights reserved 2 - 4
0648
IXBH 40N160
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Cies 3300 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 220 pF
Cres 30 pF
QgIC = 20 A, VCE = 600 V, VGE = 15 V 130 nC
td(on) 200 ns
tri 60 ns
td(off) 270 ns
tfi 40 ns
RthJC 0.35 K/W
RthCK 0.25 K/W
Reverse Conduction Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Conditions min. typ. max.
VFIF = IC90, VGE = 0 V, Pulse test 2.5 5 V
t < 300 µs, duty cycle d < 2%
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 960 V, RG = 22 Ω
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
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© 2006 IXYS All rights reserved 3 - 4
0648
IXBH 40N160
IXYS reserves the right to change limits, test conditions and dimensions.
VCE - Volts
0 400 800 1200 1600
ICM - Amperes
0.1
1
10
100
VF - Volts
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IF - Amperes
0
10
20
30
40
50
60
70
VCE - Volts
0 2 4 6 8 10 12 14 16 18
IC - Amperes
0
10
20
30
40
50
60
70
QG - nanocoulombs
0 20406080100120140
VGE - Volts
0
2
4
6
8
10
12
14
16
VCE - Volts
0 2 4 6 8 1012141618
IC - Amperes
0
10
20
30
40
50
60
70
13V
TJ = 25°C VGE = 17V
TJ = 125°C
VCE = 600V
IC = 20A
TJ = 125°C
VCEK < VCES
15V
VGE - Volts
5678910111213
IC - Amperes
0
10
20
30
40
50
60
70
13V
VGE = 17V
15V
VCE = 20V
TJ = 125°C
TJ = 25°C
TJ = 125°C TJ = 25°C
IXBH 40N140
IXBH 40N160
Fig. 1 Typ. Output Characteristics Fig. 2 Typ. Output Characteristics
Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Characteristics of Reverse
Conduction
Fig. 5 Typ. Gate Charge characteristics Fig. 6 Reverse Based Safe Operating Area
RBSOA
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© 2006 IXYS All rights reserved 4 - 4
0648
IXBH 40N160
IXYS reserves the right to change limits, test conditions and dimensions.
IC - Amperes
0 10203040
tfi - nanoseconds
0
10
20
30
40
50
Pulse Width - Seconds
0.00001 0.0001 0.001 0.01 0.1 1
ZthJC - K/W
0.0001
0.001
0.01
0.1
1
RG - Ohms
0 10203040
td(off) - nanoseconds
0
100
200
300
400
Single Pulse
IXBH40
VCE = 960V
VGE = 15V
RG = 22Ω
TJ = 125°C
VCE = 960V
VGE = 15V
IC = 20A
TJ = 125°C
Fig. 7 Typ. Fall Time Fig. 8 Typ. Turn Off Delay Time
Fig. 9 Typ. Transient Thermal Impedance
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