MIL SPECS Tcfoo00125 ooozoa7 Tt MIL-S-19500/176B 13 December 1971 SUPERSEDING MIL-S-19500/176A 10 November 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1047A, 2N1048A, 2N1049A AND 2N1050A This specification is mandatory for use by all Depart- ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for NPN, power, silicon transistors. 1,2 Physical dimensions. See figure 1 (TO-57). 1.3 Maximum ratings. Py 1/ Py 2/ VEBO VCEO Io Tstg and Top To = 25C | Ta = 25C 2N1047A 2N1048A 2N1049A 2N1050A WwW Ww Vde Vde Vde mAdc c 40 1 i 10 80 120 500 -65 to +200 1/ Derate linearly 228 mW/C for Tc > 25C. 2/ Derate linearly 5.7 mW/ C for Ta > 25C. 1.4 Primary electrical characteristics, Arg 2N1047A 2N1049A | ge | VcR(sat) 2N1048A 2N1050A Vcr = 10 Vde Vcr = 10 Vdc Vcr = 30 Vde | Ic = 500 mAde Ic = 50 mAdc Ic = 50 mAdc Ic = 30 mAdc Ip = 100 mAdc and and f= 1 MHz Ic = 500 mAdc I, = 500 mAde t Vdc Min 12 30 4 --- Max 36 90 40 7.5 2. APPLICABLE DOCUMENTS 2.1 The following documents, of the issue in effect on date of invitation for bids or request for proposal, form a part of the specification to the extent specified herein. SPECIFICATION MILITARY MIL-S-19500 - Semiconductor Devices, General Specification for. FSC 5961MIL SPECS icf OO00012e5 000e0484 1 i MIL~S-19500/176B STANDARDS MILITARY MIL-STD-202 - Test Methods for Electronic and Electrical Component Parts. MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of specifications, standards, drawings, and publications required by suppliers in con- nection with specific procurement functions should be obtained from the procuring activity or as directed by the contracting officer. ) 3. REQUIREMENTS 3.1 General. Requirements shall be in accordance with MIL-S-19500, and as specified herein. 3,2 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-S-19500. 3.3 Design, construction, and physical dimensions. Transistors shall be of the design, con- struction, and physical dimensions shown on figure 1. 3.4 Performance characteristics. Performance characteristics shall be as specified in tables I, II, and IQ. 3.5 Marking. Devices shall be marked in accordance with MIL-S-19500. 4. QUALITY ASSURANCE PROVISIONS 4,1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-S-19500 and as specified herein. 4.2 Qualification inspection. Qualification inspection shall consist of the examinations and tests specified in tables I, II, and III. 4.3 Quality conformance inspection. Quality conformance inspection shall consist of group A, B, and C inspections. 4.3.1 Group A inspection. Group A inspection shall consist of the examinations and tests specified in table I. 4,3.2 Group B inspection. Group B inspection shall consist of the examinations and tests speci- fied in table II. 4,3.3 Group C inspection. Group C inspection shall consist of the tests specified in table III. This inspection shall be conducted on the initial lot and thereafter every six months during production. 4,3.4 Group B and group C life-test samples. Samples that have been subjected to group B, 340-hours lite-test, may be continued on test to 1, 000 hours in order to satisfy group C life-test requirements. These samples shall be predesignated, and shall remain subjected to the group Cc 1, 000-hour acceptance evaluation after they have passed the group B, 340-hour acceptance criteria. The cumulative total of failures found during 340-hour test and during the subsequent interval up to 1, 000 hours shall be computed for 1, 000-hour acceptance criteria, see 4.3.3. 4.3.5 Lot representative (group B and C inspections). At the option of the manufacturer, the highest voltage type represented in the lot may be used for group B and C inspections as representa- tive of a lot containing the several types.MIL SPECS Icfoooo1es oconzoa9 3 ff MIL-S-19500/176B Me A |< | nas Tp RH Collector Le SEATING PLANE REFERENCE PLANE INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A .195 215 4.95 5. 46 Ob 016 019 407 . 482 2.5 @D . 440 . 460 11.18 11. 68 @GDj . 220 . 230 5. 59 5. 84 @D2 400 420 10.16 10, 67 e .200 T.P. 5.08 T.P. 5 ej .100 T.P. 2.54 T.P. 5 F oT . 030 ee . 162 J .278 . 318 7.06 8.08 L 1. 485 1,525 37,72 38.74 2 N . 380 . 410 9. 66 10.41 8 .100 T.P. 2,54 T.P 5 81 .078 T.P. 1,98 T.P. 5 OW 21141 [| .1177 2.898 | 2.990 3,4 NOTES: 1. Metric equivalents (to the nearest .01 mm) are given for general information only and are based upon 1 inch = 25.4 mm. 2. (Three leads). The specified lead diameter applies to the zone between . 050 (1.27 mm) and .250 (6.35 mm) from the reference plane. Between .250 (6.35 mm) and end of lead, a maximum of .021 (.533 mm) is held. Outside of the zones the lead diameter is not controlled. 3, 6-32 UNC-2A maximum pitch diameter of plated threads shall be basic pitch diameter .1177 (2.99 mm). 4, Complete threads shall extend to within three threads of the seating plane and shall remain within tolerances to within two threads of tip of stud. 5. Maximum .019 (.482 mm) diameter leads and maximum . 230 (5. 84 mm) stud shoulder to be within .007 (.178 mm) radius of true location relative to the .460 (11. 68 mm) diameter flange at a gaging plane .054 +.001 -.000 (1.37 +.025 -. 060 mm), from the reference plane. 6. The collector shall be electrically connected to the case. FIGURE 1. Physical dimensions of transistor types 2N1047A, 2N1048A, 2N1049A, and 2N1050A (TO-57).MIL SPECS MIL-S-19500/176B cf oo00125 ooozo%0 7 ff TABLE I. Group A inspection MIL-~STD-750 Limits Examination or test Method Details LTPD | Symbol Min Max Unit Subgroup 1 10 Visual and mechanical 2071 --- --- --- --- examination Subgroup 2 5 Breakdown voltage, 3011 Bias condition D collector to emitter Ic = 30 mAdc pulsed (see 4.4.1) 2N1047A, 2N1049A BVcro| 80 =e Vdc 2N1048A, 2N1050A BVcRo | 120 aoe Vde Breakdown voltage, 3011 Bias condition D collector to emitter -~ I = 60 mAdc pulsed (see 4.4.1) 2N1047A, 2N1049A BVcro| 60 --- Vde 2N1048A, 2N1050A BVcEo | 100 -e- Vde Emitter to base cutoff 3061 Bias condition D InBO ao: 250 | uAdc current Vep = 10 Vde Collector to base cutoff 3036 Bias condition D IcBo oe: 15 | pAde current Vop = 30 Vde Collector to base cutoff 3036 | Bias condition D IcBo moo 250 | wAdc current 2N1047A, 2N1049A Vos = 80 Vde 2N1048A, 2N1050A VcB = 120 Vde Collector to emitter cutoff 3041 Bias condition A Iorx eo 250 | pAdc current VBE = -1.5 Vde 2N1047A, 2N1049A Vcr = 80 Vde 2N1048A, 2N1050A Vck = 120 Vde Subgroup 3 5 Forward-current 3076 VcE = 10 Vdc transfer ratio Ic = 500 mAdc pulsed (see 4, 4.1) 2N1047A, 2N1048A hep 12 36 --- 2N1049A, 2N1050A hee 30 90 ~-- Forward-current 3076 | Vop = 10 Vde transfer ratio Ic = 50 mAdc pulsed (see 4, 4,1) 2N1047A, 2N1048A hrRr 12 36 --- 2N1049A, 2N1050A hrp 30 90 ~-- Collector to emitter 3071 |I = 500 mAdc VeR(sat)| -~- | 7.5 | Vde voltage (saturated) Ip = 100 mAdc pulsed (see 4. 4.1) Base emitter voltage 3066 | Test condition B VBE --- 6 Vde (unsaturated) Vor = 10 Vde Ic = 500 mAdc pulsed (see 4. 4.1) Magnitude of small-signal 3306 |VcRr = 30 Vdc {he | 4 40 --- short-circuit forward- Ic = 30 mAdc current transfer ratio f= 1 MHzMIL SPECS Ic ff oooo01e5 go02051 1 & MIL-S-19500/176B TABLE I. Group A inspection - Continued MIL-STD~750 Limits Examination or test . Method Details LTPD| Symbol Min Max Unit Subgroup 4 10 High-temperature operation: Ta = +150C Collector to base cutoff 3036 Bias condition D Icpo cco 350 | pAdc current Vop = 30 Vde Collector to emitter 3041 Bias condition B IcER o-- 350 | wAdc cutoff current Vcr = 30 Vde RpeE = 1.5 kilohms Low-temperature operation: Ta = -65C Forward-current 3076 Vcr = 10 Vde transfer ratio Ic = 500 mAdc pulsed (see 4, 4.1) 2N1047A, 2N1048A hpr 8 a 2N1049A, 2N1050A her 90 | --- | --- TABLE Il, Group B inspection MIL-STD=-750 Limits Examination or test Method Details LTPD | Symbol Min Max Unit Subgroup 1 20 Physical dimensions 2066 (see figure 1) --- --- --- | --- Subgroup 2 15 Solderability 2026 --- --- w-- | wee Thermal shock 1051 Test condition C, 10 cycles --- --- wee [eee (temperature cycling) Thermal shock 1056 Test condition B --- --- --- |--- (glass strain) Hermetic seal 1071 Test condition G or H for --- --- |5x1077| atm fine leaks; test condition A, ce/s C, D or F for gross leaks Moisture resistance 1021 = --- --- |--- End points: Collector to base 3036 Bias condition D IcBpo --- 15 | pAde cutoff current Vag = 30 Vde . CB Forward-current 3076 Vor = 10 Vdc transfer ratio I = 500 mAde pulsed (see 4, 4,1) 2N1047A, 2N1048A her 12 36 |--- 2N1049A, 2N1050A hpE 30 90 |---MIL MIL-S-19500/176B SPECS Icfooo0125 OOozo42 3 j TABLE Hi. Group B inspection - Continued MIL-STD-750 Limits Examination or test Method Details LTPD | Symbol Min Max Unit Subgroup 3 15 Shock 2016 Nonoperating; 500 G; 1 ms; --- --- --- --- 5 blows in each orientation: x1, Y41; Yo, and Zy Vibration, variable 2056 --- --- oce --- frequency Constant acceleration 2006 5000 G; in each orientation --- --- --- --- X41, Yz, Yg and 2; End points: (Same as subgroup 2) Subgroup 4 20 Terminal strength 2036 Test condition E (for the --- --- -o- ~-- (lead fatigue) three flexible leads only) End points: Hermetic seal 1071 Test condition G or H for one --- [5x107"] atm fine leaks; test condition A, cc/s C, D or F for gross leaks Subgroup 5 20 Salt atmosphere (corrosion) 1041 --- -e- --- --- Subgroup 6 q High-temperature life 1032 Tstg = +200C --- won eo (nonoperating) (see 4, 3.4) End points: Collector to base 3036 Bias condition D IcBo ore 30 | wAde cutoff current Vop = 30 Vde Forward-current 3076 Vcr = 10 Vde transfer ratio Ic = 500 mAdc pulsed (see 4.4.1) 2N1047A, 2N1048A hpp 9.6 43 --- 2N1049A, 2N1050A hpp 24 108 --- Subgroup 7 q Steady-state operation life 1027 +26C< Tao < +100C --- --- --- =~ VcE = 40 Vdc Pr = 23W + 100C - To 4.39 C/W (see 4.3.4) End points: (Same as subgroup 6)MIL SPECS Ic on00ie5 g00eo43 B MIL-S-19500/176B TABLE III. Group C inspection MIL-~STD-750 Limits Examination or test Method Details LTPD | Symbol Min Max Unit Subgroup 1 10 Resistance to solvents --- MIL-STD-202, Method 215 a a _. | cee (see 4, 4.2) Subgroup 2 A=10 High-temperature life 1031 Tstg = +200C wee ee _.. | oe (nonoperating) (see 4.3.4) End points: (Same as subgroup 6 of group B) Subgroup 3 - | A=10 Steady-state operation life 1026 | +25C< Ta < +100C --- wee | ole | oon Vck = 40 Vde Pp = 23W + (Peoae C- Tc 4,39 C/W (see 4. 3. 4) End points: (Same as subgroup 6 of group B) 4.4 Methods of examination and test. Methods of examination and test shall be as specified in tables I, Ii, and Til, and as follows: 4.4.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.4.2 Resistance to solvents. Transistors shall be subjected to tests in accordance with method 215 of MIL-STD-202. The following details shall apply: (a) All areas of the transistor body where marking has been applied shall be brushed. (b) After subjection to the tests there shall be no evidence of mechanical damage to the device and markings shall have remained legible. 5. PREPARATION FOR DELIVERY 5.1 See MIL-S-19500, section 5. 6. NOTES 6.1 Notes. The notes specified in MIL-S-19500 are applicable to this specification. 6.2 CHANGES FROM PREVIOUS ISSUE. THE EXTENT OF CHANGES (DELETIONS, ADDITIONS, ETC.) PRECLUDE THE ANNOTATION OF THE INDIVIDUAL CHANGES FROM THE PREVIOUS ISSUE OF THIS DOCUMENT.MIL SPECS MIL-S-19500/176B Custodians: Army - EL Navy - EC Air Force - 17 Review activities: Army - MU, MI Air Force - 11, 80 DSA - ES User activities: Army - SM Navy - AS, CG, MC, SH Air Force - 13, 15, 19 TCfoooo1es oooeo%4 7 & Preparing activity: Navy - EC Agent: DSA - ES (Project 5961-0260) U.S, GOVERNMENT PRINTING OFFICE: 1971-714-161/4211