MOTOROLA SC IXSTRS/R F} BBE Mi 63672eS4 0098679 SY3 ME MOTL MOTOROLA = SEMICONDUCTOR ox TECHNICAL DATA Advance Information MTP5P25 Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 5 AMPERES This TMOS Power FET is designed for medium voltage, Rpsion) = 3 CHMS high speed power switching applications such as switching 250 VOLTS regulators, converters, solenoid and motor drives. @ Silicon Gate for Fast Switching Speeds Switching Times Specified at 100C Designers Data IDSs, VDS(on)- VGS(th) and SOA Specified } D x at Elevated Temperature @ Rugged SOA is Power Dissipation Limited | @ Source-to-Drain Diode Characterized for Use With Inductive Loads TMOS G MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage Voss 250 Vde Drain-Gate Voltage (Rgg = 1 MQ) VpGR 250 Vdc Gate-Source Voltage Continuous Ves +20 Vde Non-repetitive (tp <= 50 us) | VGsSM +40 Vpk Drain Current Continuous Ip 5 Adc Pulsed lom 15 Total Power Dissipation @ Tc = 25C Pp 75 Watts Derate above 25C 0.6 wrc Operating and Storage Temperature Range Ty Tstg 65 to 150 C CASE 221A-06 THERMAL CHARACTERISTICS TO-2208B Thermal Resistance Cw Junction to Case Reuc 1.67 Junction ta Ambient RaJA 30 | 62.5 Maximum Lead Temperature for Soldering TL 260 c Purposes, 1/8 from case for 5 seconds ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Characteristic | Symbol | Min Max | Unit | OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BRIDSS 250 _ Vde (Vgsg = 0, ID = 0.25 mA) Zero Gate Voltage Drain Current Ipss mAdc (ps = Rated Voss. Ves = 0) _ 0.2 (Vps = 0.8 Rated Vpss, Vgs = 0, Ty = 125C} _ 1 This document contains information on a nw product Specifications and information herein are (continued) subject to change without notice. MOTOROLA TMOS POWER MOSFET DATA 3-285MOTOROLA SC LtXSTRS/R FF &BE M@@ 6367254 0094640 265 Me MOTEL MTP5P25 ELECTRICAL CHARACTERISTICS continued (Tc = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Gate-Body Leakage Current, Forward IGSSF _ 100 nAdc (VGsF = 20 Vde, Vps = 0) Gate-Body Leakage Current, Reverse IGSSR ~ 100 nAdc (V@sR = 20 Vdc, Vpsg = 6) ON CHARACTERISTICS Gate Threshold Voltage VGSith) Vde (Vos = Ves. Ip = 1 mA! 2 45 Ty = 100C 15 4 Static Drain-Source On-Resistance RDSton) _ 3 Ohms (Vgg = 10 Vde, Ip = 2.5 Adc) Drain-Source On-Voltage (Vgg = 10 V} Vosion} Vde (Ip = 5 Adc) _ 16 (Ip = 2.5 Ade, Ty = 100C) - 16 Forward Transconductance OFS 1 _ mhos (Vos = 10 V, Ip = 2.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Cigs _ 1600 pF Output Capacitance bs homes = 6, Cass - 400 Reverse Transfer Capacitance See Figure 14 Cres 250 SWITCHING CHARACTERISTICS* (Ty = 100C) Turn-On Delay Time tdion} 40 ns Rise Time (Vop = 25 V, Ip = 0.5 Rated Ip ty _ 70 - Rgen = 50 ohms} Turn-Off Delay Time See Figures 11, 12 and 13 Tdioff) _ $0 Fall Time tf - 60 Tota! Gate Charge (Vps = 0.8 Rated Vpss. Qg 15 (Typ) 30 nc Gate-Source Charge Ip = Rated Ip, Veg = 10 V) Qgs 5 (Typ) _ Gate-Drain Charge See Figure 10 Qga 10 (Typ} SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Voltage (lg = Rated Ip Vsp 3 (Typ) 5 Vde Forward Turn-On Time Vgs = 0} ton 180 (Typ) _ ns Reverse Recovery Time ter 200 (Typ) ns *Pulse Test: Puise Width < 300 us, Duty Cycle < 2%. en MOTOROLA TMOS POWER MOSFET DATA 3-286MTP5P25 MOTOROLA SC {XSTRS/R FF BBE MB 6367254 0094681 1T1 ME MOTE TYPICAL ELECTRICAL CHARACTERISTICS s ip, DRAIN CURRENT (AMPS) nm we - mn on ~ a wa on VGSith}. GATE THRESHOLD VOLTAGE (NORMALIZED) 0 64 @ 2 6 2 2% 2B 3 3% 40 -50 -25 0 25 50 75 wo 8125150 x Vos, DRAIN TO-SOURCE VOLTAGE (VOLTS) Ty, JUNCTION TEMPERATURE (C) Figure 1. On-Region Characteristics Figure 2. Gate-Threshold Voltage Variation With Temperature Veg = OV | Ip = 0.25 mA \p, DRAIN CURRENT (AMPS) ViBRIDSS, ORAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED} 0 2 4 6 a 10 50 0 50 100 150 200 Vs, GATE TO-SQURCE VOLTAGE (VOLTS) Ty, JUNCTION TEMPERATURE (C} Figure 3. Transfer Characteristics Figure 4. Drain-To-Source Breakdown Voltage Variation With Temperature Ves = 10V Ip = 25A 05 Rosion)- DRAIN-TO-SOURCE RESISTANCE (OHMS) Rpsion), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 0 q { 2 3 4 5 6 7 8 9 10 50 0 50 100 150 200 Ip, DRAIN CURRENT (AMPS) TJ, JUNCTION TEMPERATURE (C) Figure 5. On-Resistance versus Drain Current Figure 6. On-Resistance Variation With Temperature a MOTOROLA TMOS POWER MOSFET DATA 3-287MTP5P25 MOTOROLA SC IXSTRS/R F} BSE Me 639b72S4Y OO94b8e 036 ME MOTL SAFE OPERATING AREA INFORMATION ny Ss = a hm w ow RbSion} LIMIT a = PACKAGE LIMIT TRERMAL LIMIT Ip, DRAIN CURRENT {AMPS} soo mm SINGLE PULSE Vgs = 20 VOLTS Tc = 25C 1 24 MTP SP25 5 7 10 20 30 50 70 100 200 300 500 1000 Vg. DRAIN-TO-SOURCE VOLTAGE (VOLTS) ao Nw Figure 7. Maximum Rated Forward Bias Safe Operating Area FORWARD BIASED SAFE OPERATING AREA The FBSOA curves define the maximum drain-to- source voltage and drain current that a device can safely handle when it is forward biased, or when it is on, or being turned on. Because these curves include the limi- tations of simultaneous high voltage and high current, up to the rating of the device, they are especially useful to designers of linear systems. The curves are based on a case temperature of 25C and a maximum junction tem- perature of 150C. Limitations for repetitive pulses at var- ious case temperatures can be determined oy using the thermal response curves. Motorola Application Note, AN569, Transient Thermal Resistance-General Data and its Use provides detailed instructions. 1 07 D 05 03 a2 = 05 0.2 01 0.05 002 rit), TRANSIENT THERMAL RESISTANCE (NORMALIZED) eee, 2 @2o w an 002 =" py SINGLE PULSE 0.04 oo 002 00 Ot o 1 20 an o Ty = 190C Ip, DRAIN CURRENT (AMPS) on 0 50 100 150 200 250 Vg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 8. Maximum Rated Switching Safe Operating Area SWITCHING SAFE OPERATING AREA The switching safe operating area (SQA) of Figure & is the boundary that the load line may traverse without in- curring damage to the MOSFET. The fundamental limits are the peak current, Ipnq and the breakdown voltage, V(BRIDSS- The switching SOA shown in Figure 8 is ap- plicable for both turn-on and turn-off of the devices for switching times less than one microsecond. The power averaged over a complete switching cycle must be less than: Tjtmax) Te Rec Pipk) Rayclt) = elt Rac Rac = 167CW MAX 4 D CURVES APPLY FOR POWER th ee PULSE TRAIN SHOWN to | READ TIME AT ty ~Tr=P DUTY CYCLE, D = ty", Typ) ~ Te = Pipk) Reucitt 5 10 20 50 100 200 500 1k t, TIME (ms) Figure 9. Thermal Response MOTOROLA TMOS POWER MOSFET DATA 3-288MTPSP25 MOTOROLA SC C(XSTRS/R F) bBE D MM 6367254 0098683 T74 MMOTL RESISTIVE SWITCHING z Yoo 3 = by Vin AL = Y 2 Vout 2 3 PULSE GENERATOR S Cocco 4 2 = 500 OUT e Vpg = i00V | Ren Z | 00 | , & 150 te 2509 a | |= = $ - ~200V | | Lo J L 0 5 10 15 20 25 30 35 40 45 50 = Qg, TOTAL GATE CHARGE (nC) Figure 10, Gate Charge versus Gate-To-Source Voltage Figure 11. Switching Test Circuit 1000 Me ton a 'gion}2>]| ee t, td{ot) 4 _ 100 OUTPUT, Vout = 10 INPUT Vin 10% J ' 0 100 100 INVERTED PULSE WIDTH Ag, GATE RESISTANCE (OHMS) Figure 12. Resistive Switching versus Gate Resistance Figure 13. Switching Waveforms C, CAPACITANCE (pF) 0 4 8 2 6 4 @ 2 HB 4 Vps. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 14. Capacitance Variation re MOTOROLA TMOS POWER MOSFET DATA 3-289