CMLM3405
MULTI DISCRETE MODULE™
SURFACE MOUNT
HIGH CURRENT
LOW VCE(SAT) SILICON NPN TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM3405 is a
single NPN Transistor and Schottky Diode packaged in
a space saving SOT-563 case and designed for small
signal general purpose applications where size and
operational efficiency are prime requirements.
• Complementary Device: CMLM7405
• Combination High Current Low VCE(SAT)
Transistor and Low VF Schottky Diode.
MARKING CODE: C53
MAXIMUM RATINGS - CASE: (TA=25°C) SYMBOL UNITS
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
MAXIMUM RATINGS - Q1: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 1.0 A
Peak Collector Current ICM 1.5 A
MAXIMUM RATINGS - D1: (TA=25°C) SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 40 V
Continuous Forward Current IF 500 mA
Peak Repetitive Forward Current, tp ≤1.0ms IFRM 3.5 A
Peak Forward Surge Current, tp= 8.0ms IFSM 10 A
ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO V
CB=40V 100 nA
IEBO V
EB=6.0V 100 nA
BVCBO I
C=100μA 40 V
BVCEO I
C=10mA 25 V
BVEBO IE=100μA 6.0 V
VCE(SAT) I
C=50mA, IB=5.0mA 20 50 mV
VCE(SAT) I
C=100mA, IB=10mA 35 75 mV
VCE(SAT) I
C=200mA, IB=20mA 75 150 mV
VCE(SAT) I
C=500mA, IB=50mA 130 250 mV
VCE(SAT) I
C=800mA, IB=80mA 200 400 mV
VCE(SAT) I
C=1.0A, IB=100mA 250 450 mV
VBE(SAT) I
C=800mA, IB=80mA 1.1 V
VBE(ON) V
CE=1.0V, IC=10mA 0.9 V
SOT-563 CASE
R1 (18-January 2010)
www.centralsemi.com
CMLM3405
MULTI DISCRETE MODULE™
SURFACE MOUNT
HIGH CURRENT
LOW VCE(SAT) SILICON NPN TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
ELECTRICAL CHARACTERISTICS - Q1 - Continued:
SYMBOL TEST CONDITIONS MIN MAX UNITS
hFE V
CE=1.0V, IC=10mA 100
hFE V
CE=1.0V, IC=100mA 100 300
hFE V
CE=1.0V, IC=500mA 100
hFE V
CE=1.0V, IC=1.0A 50
fT V
CE=10V, IC=50mA, f=100MHz 100 MHz
Cob V
CB=10V, IE=0, f=1.0MHz 10 pF
ELECTRICAL CHARACTERISTICS - D1: (TA=25°C)
IR V
R=10V 20 μA
IR V
R=30V 100 μA
BVR I
R=500μA 40 V
VF I
F=100μA 0.13 V
VF I
F=1.0mA 0.21 V
VF I
F=10mA 0.27 V
VF I
F=100mA 0.35 V
VF I
F=500mA 0.47 V
CT V
R=1.0V, f=1.0MHz 50 pF
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Cathode D1
4) Anode D1
5) Anode D1
6) Collector Q1
MARKING CODE: C53
SOT-563 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R1 (18-January 2010)
