fAAMOSPEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ..designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * High DC Current Gain hFE = 1000(Min) @ |, = 20A * Monolithic Construction with Built-in Base-Emitter Shunt Resistor MAXIMUM RATINGS PNP NPN MJ11011 MJ11012 MJ11013 MJ11014 MJ11015 MJ11016 30 AMPERE COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 60-120 VOLTS 200 WATTS Characteristic Symbol | MJ11014 | MJ11013 | MJ11015 | Unit MJ11012 | MJ11014 | MJ11016 Collector-Emitter Voltage VeEo 60 90 120 Vv COllector-Base Voitage Vepo 60 90 120 Vv Emitter-Base Voltage Vepo 5.0 V Collector Current-Continuous le 30 A -Peak lom 50 Base Current Is 1.0 A Total Power Dissipation @T,= 25C Pp 200 WwW Derate above 25C 1.15 wrc Operating and Storage Junction Ty .Ts1 c Temperature Range - 65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rejc 0.87 CAN pas P, , POWER DISSIPATION(WATTS) o S8ABRSBA 0 2B ss TH Tg . TEMPERATURE(*C) 100 125 150 FIGURE -1 POWER DERATING 175 200 eee = ae =6 J} Ub ) V4 ae Ne A es | PIN 1.BASE 2.EMNTER COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A | 38.75 | 3096 B | 1928 | 2223 Cc 796 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.33 1.62 H 29.90 30.40 | | 1664 | 1730 J | 388 | 436 K 10.67 11.18MJ11011, MJ11013, MJ11015 PNP /MJ11012, MJ11014, MJ11016 NPN Se ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) VeEo(sus) Vv (I, = 100 mA, I, = 9) MJ11011,MJ11012 60 MJ11013,MJ11014 90 MJ11015,MJ11016 120 Collector Cutoff Current lcEo mA ( Veg = 50 V, I, = 0.0) 1.0 Collector-Emitter Leakage Current loer mA ( Veg = 60 V,R,.= 1.0k ohm ) MJ11011,MJ11012 1.0 (Veg = 90 V,R,.= 1.0k ohm ) MJ11013,MJ11014 1.0 (Ve, = 120 V,R,_= 1.0k ohm ) MJ11015,MJ11016 1.0 ( Veg = 60 V,Rg_ = 1.0k ohm ,T, = 125C ) MJ11011,MJ11012 5.0 ( Veg = 90 V, Rye = 1.0k ohm , T, =125C ) MJ11013,MJ11014 5.0 (Veg = 120 V,Rg, = 1.0k ohm,T, =125C ) MJ11015,MJ11016 5.0 Emitter Cutoff Current leso mA (Veg = 5.0 V,Ig= 0 ) 5.0 ON CHARACTERISTICS (1) DC Current Gain hFE (I, =20A, V,, =5.0V) 1000 (I, =30A, V,, =5.0V) 200 Collector-Emitter Saturation Voltage Vee(sat) Vv (I, = 20A, I, = 200 mA) 3.0 (I. = 30A, I, = 300 mA) 4.0 Base-Emitter Saturation Voltage Ve{(sat) Vv (I, = 20A, |, = 200 mA) 3.5 (I, = 30A, I, = 300 mA) ) 5.0 DYNAMIC CHARACTERISTICS Small-Signal Current Gain |e | (l = 10A, Veg = 3.0 V, f = 1.0 MHz ) 4.0 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% (2) f= {h,.| F ost INTERNAL SCHEMATIC DIAGRAM Collector Collector NPN PNP MJ11014.000 p= = + 4 MJ11012 MJ11013 MJ11014 MJ11015 ane MJ11016 Loans s ata EmitterMJ11011,13,15 PNP / MJ11012,14,16 NPN hre , DC CURRENT GAIN V VOLTAGE (VOLTS) lc , COLLECTOR CURRENT (Amp) DC CURRENT GAIN 20k 10k 5k 2k 1k Vegs5.0V Tx25C 200 03 05 07 10 20 3.0 0 70 10 20 30 lc , COLLECTOR CURRENT (AMP) "ON" VOLTAGES PNP MJ11071,MJ4 T3225 C Vee(set) Qlo/p=100 @ IcAg=100 0.1 0.2 05 1.0 2.0 .0 10 20 50 IC , COLLECTOR CURRENT (AMP) ACTIVE-REGION SAFE OPERATING AREA (SOA) 50 10 5 2 1 ~ Bonding Wire Limit 05 Second Breakdown Linit ~ Thermally Linited at T=25C (Single Pulse) 02 0.1 MJ11011,MJ7 MJ11013,MJ1 0.01 2 5 10 20 50 100 200 Vee, COLLECTOR EMITTER VOLTAGE (VOLTS) GAIN(NORMALIZED) V VOLTAGE (VOLTS) 0.1 SMALL-SIGNAE CURRENT GAIN 10 20 50 100 200 500 tk f , FREQUENCY (kHz) "ON" VOLTAGES NPN MJ11012,MJ11014,MJ1 Tyx25 C Vee;sat) Qlc/lg=100 @lclla=100 4 05 1.0 2.0 5.0 10 20 50 IC , COLLECTOR CURRENT (AMP) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve: is base on T ypiqg=200 C;Te is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided Typs200C, At high case temperatures, thermal limita - tion will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Ie-Vee