EAMOSPEC HIGH-POWER PNP SILICON POWER TRANSISTORS PNP ... designed for use in general-purpose amplifier and switching 2SA1386 application . 2SA1386A FEATURES: * Recommend for 105W High Fiderity Audio Frequency Amplifier _ Output stage 15 AMPERE Complementary to 2SC3519 & 2SC3519A POWER TRANASISTOR 160 -180 VOLTS 130 WATTS MAXIMUM RATINGS Characteristic Symbol | 2SA1386 2SA1386A Unit Collector-Emitter Voltage Voeo 160 180 V Collector-Base Voltage Vego 160 180 V Emitter-Base Voltage V, 5.0 V 9 EBO TO-247(3P) Collector Current - Continuous Ic 15 A - Peak B ea lom 20 a ". Base current ls 4.0 A oN A a op AUST I Total Power Dissipation @T, = 25C Py 130 w 123 | F| Derate above 25C 1.04 wrc 1 Operating and Storage Junction Ty. Tst c H To L. Temperature Range -55 to +150 \ A Pp IL THERMAL CHARACTERISTICS PIN 1.BASE 2.COLLECTOR Characteristic Symbol Max Unit S-EMITTER Thermal Resistance Junction to Case Reje 0.961 C DIM MILLIMETERS MIN MAX A 20.63 | 22.38 150 FIGURE -1 POWER DERATING B 15338 | 1620 Cc 1.90 2.70 oS D 5.10 6.10 pi E | 1481 | 15.22 F 41.72 | 12.84 5 100 G 420 | 450 e H 182 | 246 s 7 ] 292 | 3.23 2 J 0.89 153 e 90 K | 526 | 5.66 = L | 1850 | 21.50 g 2 mM | 468 | 5.36 2 0 N 2.40 2.80 0 3.25 3.65 0 2 50 7 100 125 150 P 055 0.70 To , TEMPERATURE( C) TO-247(3P)2SA1386, 2SA1386A PNP ee ee ee ee eee ee ee eee een ec a ee ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Vier)ceo V (Ig= 25 mA, I,p= 0 ) 2SA1386 160 2SA1386A 180 Collector Cutoff Current lepo uA ( Vog= 160 V, I_= 0 ) 2S8A1386 100 ( Veg= 180 V, |E= 0) 2SA1386A 100 Emitter Cutoff Current leso uA ( Vep= 5.0 V, Ip= 0) 100 ON CHARACTERISTICS (1) DC Current Gain (I_= 5.0 A, Vop= 4.0 V ) hFE 50 Collector-Emitter Saturation Voltage Vee(sat) Vv (I-= 5.0 A, 1,= 500 mA ) 2.0 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product fy MHz (Ig =2.0A, Veg = 12 V, f = 1.0 MHz ) 10 SWITCHING CHARATERISTICS Turn-on Time Voec= 40 V, I= 10A t on 0.30(typ) us : lar= lgo 1.0A Storage Time Bt 2 t 0.75 us g R,= 4 ohm 5 (yp) - Fall Time ty 0.25(typ) us (1) Pulse Test: Pulse Width =300 us,Duty Cycle = 2.0%2SA1386, 2SA1386A PNP rrr ACTIVE REGION SAFE OPERATING AREA (SOA) There are two limitation on the power handling ability 30 20 of a transistor:average junction temperature and second 2 breakdown safe operating area curves indicate = Ic-Vce limits of the transistor that must be observed for reliable Bb operation i.e., the transistor must not be subjected to a greater dissipation than curves indicate. 3 The data of SOA is base on Tyeiq=150 C;Te is variable x depending on conditions.second breakdown pulse limits 5 are valid for duty cycles to 10% provided Typg<150C, At 4 eae high case temperatures, thermai limita tion will reduce the 03 CURVES MUST BE power that can be handled to values less than the SAT ee 2SAI386 limitations imposed by second breakdown. on 2SA1386A 5.0 10 20 30 50 100 200 Vee , COLLECTOR EMITTER (VOLTS) DC CURRENT GAIN Ic - Vee 200 16 COMMON EMITTER = N 30 here , DC CURRENT GAIN 8 lc , COLLECTOR CURRENT (A) = a o o 10 0.02 005 01 02 05 1.0 2.0 5.0 10 20 0 1.0 2.0 3.0 40 Ie , COLLECTOR CURRENT (AMP) Vee , COLLECTOR-EMITTER VOLTAGE (V) fr -Ic VCE(sat)-lp Lod o "| LETT COMMON EMITTER Jt Tq228C Le nell Vogtl2V a 40 Mt N o NN \ \ = aT fr, TRANSITION FREQUENCY (MHz) \ J Vce , COLLECTOR EMITTER VOLTAGE (VOLTS) o Qo 08 1.0 o 0.02 005 = (04 02 0.5 1.0 20 5.0 10 0.2 le, COLLECTOR CURRENT (A) 0.4 06 ls, BASE CURRENT (A)