MJD45H11 — PNP Epitaxial Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD45H11 Rev. C3 1
April 2010
MJD45H11
PNP Epitaxial Silicon Transistor
Applications
• General Purpose Power and Switching Such as Output or Driver Stages in Applications
• D-PAK for Surface Mount Applications
Features
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK: “-I” Suffix)
• Electrically Similar to Popular MJE45H
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Electrical Characteristics TA = 25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage - 80 V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 8 A
ICP Collector Current (Pulse) - 16 A
PC Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (TA=25°C) 1.75 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 to +150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) *Collector-Emitter Sustaining Voltage IC = - 30mA, IB = 0 - 80 V
ICEO Collector Cut-off Current VCE = - 80V, IB = 0 - 10 µA
IEBO Emitter Cut-off Current VBE = - 5V, IC = 0 - 50 µA
hFE *DC Current Gain VCE = - 1V, IC = - 2A
VCE = - 1V, IC = - 4A
60
40
VCE(sat) *Collector-Emitter Saturation Voltage IC = - 8A, IB = - 0.4A - 1 V
VBE(on) *Base-Emitter Saturation Voltage IC = - 8A, IB = - 0.8A - 1.5 V
fT Current Gain Bandwidth Product VCE= - 10A, IC = - 0.5A 40 MHz
Cob Collector Capacitance VCB = - 10V, f = 1MHz 230 pF
tON Turn On Time
IC = - 5A
IB1= - IB2 = - 0.5A
135 ns
tSTG Storage Time 500 ns
tF Fall Time 100 ns
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
11
MJD45H11 — PNP Epitaxial Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD45H11 Rev. C3 2
Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Safe Operating Area
Figure 3. Power Derating vs TCFigure 4. Power Derating vs TA
-0.01 -0.1 -1 -10
1
10
100
1000
VCE = -1V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-1 -10 -100 -1000
-0.01
-0.1
-1
-10
-100
5ms
100
µ
s
500
µ
s
1ms
DC
ICP(max)
IC(max)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
5
10
15
20
25
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
0 25 50 75 100 125 150 175
0
1
2
3
4
PC[W], POWER DISSIPATION
TA[oC], CASE TEMPERATURE
MJD45H11 — PNP Epitaxial Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD45H11 Rev. C3 3
Physical Dimension
6.60
±0.20
2.30
±0.1
0
0.50
±0.1
0
5.34
±0.30
0.70
±0.20
0.60
±0.20
0.80
±0.20
9.50
±0.30
6.10
±0.20
2.70
±0.20
9.50
±0.30
6.10
±0.20
2.70
±0.20
MIN0.55
0.76
±0.10
0.50
±0.1
0
1.02
±0.2
0
2.30
±0.2
0
6.60
±0.20
0.76
±0.10
(5.34)
(1.50)
(2XR0.25)
(5.04)
0.89
±0.10
(0.10) (3.05)
(1.00)
(0.90)
(0.70)
0.91
±0.10
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
MAX0.96
(4.34)(0.50) (0.50)
D-PAK
Dimensions in Millimeters
MJD45H11 — PNP Epitaxial Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD45H11 Rev. C3 4
Physical Dimension (Continued)
6.60 ±0.20
0.76 ±0.10
MAX0.96
2.30TYP
[2.30±0.20] 2.30TYP
[2.30±0.20]
0.60
±0.20
0.80
±0.10
1.80
±0.20
9.30
±0.30
16.10
±0.30
6.10
±0.20
0.70
±0.20
5.34 ±0.20
0.50 ±0.10
0.50 ±0.1
0
2.30 ±0.20
(0.50) (0.50)(4.34)
I-PAK
Dimensions in Millimeters
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I47
