2N7002KDW
115mA, 60V
Dual N-Channel Small Signal MOSFET
Elektronische Bauelemente
31-Dec-2009 Rev. A Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
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654
S
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D
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D
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RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
FEATURES
Low on-resistance
Fast switching Speed
Low-voltage drive
Easily designed drive circuits
ESD protected:2000V
MECHANICAL DATA
Case: SOT-363
Case Material-UL flammability rating 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Weight: 0.006 grams(approx.)
DEVICE MARKING: RK
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Drain – Source Voltage VDS 60 V
Gate – Source Voltage VGS ±20 V
Continuous Drain Current ID 115 mA
Pulsed Drain Current IDP
1 800 mA
Continuous Reverse Drain Current ID 115 mA
Pulsed Reverse Drain Current IDRP
1 800 mA
Power Dissipation PD 225 mW
Operating Junction & Storage Temperature Range TJ, TSTG -55~150 °C
Note:
1. Pw10μS, Duty cycle1%
2. When mounted on a 1x0.75x0.062 inch glass epoxy board
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage V(BR)DSS 60 - - V VGS=0V, ID =10μA
Zero Gate Voltage Drain Current IDSS - - 1.0 μA VDS=60V, VGS=0V
Gate-Source Leakage IGSS - - ±10 μA VDS=0V , VGS=±20V
ON CHARACTERISTICS
Gate-Threshold Voltage VGS(TH) 1 1.85 2.5 V VDS= VGS, ID =250μA
Static Drain-Source On Resistance RDS(ON) - - 7.5
VGS=10V, ID=0.5A
- - 7.5 VGS=5V, ID=0.05A
Forward Transfer Admittance gFS* 80 - - ms VDS=10V, ID=0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance CISS - 25 50
pF
VDS=25V
Output Capacitance COSS - 10 25 VGS=0V
Reverse Transfer Capacitance CRSS - 3.0 5 f=1MHz
SWITCHING CHARACTERISTICS
Turn-on Delay Time Td(ON) - 12 20
nS VDD=30V, I D=0.2A
Turn-off Delay Time Td(OFF) - 20 30 RL=150, V Gs=10V, RG=10
* Pw300μS, Duty cycle1%
SOT-363
REF. Millimete
r
REF. Millimete
r
Min. Max. Min. Max.
A 2.00 2.20 G 0.100 REF.
B 2.15 2.45 H 0.525 RE
F
.
C 1.15 1.35 J 0.08 0.15
D 0.90 1.10 K
E 1.20 1.40 L 0.650 TYP.
F 0.15 0.35
B
L
FHC
J
D G K
A
E
12 3
654
2N7002KDW
115mA, 60V
Dual N-Channel Small Signal MOSFET
Elektronische Bauelemente
31-Dec-2009 Rev. A Page 2 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
CHARACTERISTIC CURVES