PD - 91879A IRF7207 HEXFET(R) Power MOSFET l l l l l l Generation 5 Technology P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -20V RDS(on) = 0.06 T op V ie w Description Fifth Generation HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C VGS VGSM EAS dv/dt TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10s Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. Units -20 -5.4 -4.3 -43 2.5 1.6 0.02 12 -16 140 -5.0 -55 to + 150 V A W W/C V V V/ns C Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient Typ. Max. Units --- 50 C/W 1 6/5/00 IRF7207 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -20 --- --- --- -0.7 8.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.011 --- --- --- --- --- --- --- --- 15 2.2 5.7 11 24 43 41 780 410 200 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.06 VGS = -4.5V, ID = -5.4A 0.10 VGS = -2.7V, ID = -2.7A --- V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -5.4A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 125C -100 VGS = 12V nA 100 VGS = -12V 22 ID = -5.4A 3.3 nC VDS = -10V 8.6 VGS = -4.5V, --- VDD = -10V --- ID = -1.0A ns --- RG = 6.0 --- RD = 10, --- VGS = 0V --- pF VDS = -15V --- = 1.0MHz, Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- -3.1 --- --- -43 --- --- --- --- 42 50 -1.0 63 75 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -3.1A, VGS = 0V TJ = 25C, I F = -3.1A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 9.6mH ISD -5.4A, di/dt -79A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. RG = 25, IAS = -5.4A. When mounted on 1 inch square copper board, t<10 sec 2 www.irf.com IRF7207 100 100 VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 10 -2.25V 20s PULSE WIDTH T = 25 C J 1 0.1 1 10 -2.25V 10 Fig 1. Typical Output Characteristics TJ = 25 C TJ = 150 C 10 V DS = -10V 20s PULSE WIDTH 4.0 5.0 Fig 3. Typical Transfer Characteristics www.irf.com 6.0 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 2.0 3.0 1 10 Fig 2. Typical Output Characteristics 100 -VGS , Gate-to-Source Voltage (V) J -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 1 2.0 20s PULSE WIDTH T = 150 C 1 0.1 ID = -5.4A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7207 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 1200 Ciss 800 Coss 400 Crss 10 10 8 6 4 2 0 1 ID = -5.4A VDS = -10V -VGS , Gate-to-Source Voltage (V) 1600 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 5 -VDS , Drain-to-Source Voltage (V) 10 15 20 25 30 Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R TJ = 150 C -II D , Drain Current (A) -ISD , Reverse Drain Current (A) DS(on) 10 TJ = 25 C 1 0.1 0.4 V GS = 0 V 0.6 0.7 0.9 1.1 1.2 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1.4 100us 10 1ms 1 10ms TA = 25 C TJ = 150 C Single Pulse 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7207 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 TC , Case Temperature 150 EAS , Single Pulse Avalanche Energy (mJ) 5.0 -ID , Drain Current (A) 400 6.0 ID -2.4A -4.3A BOTTOM -5.4A TOP 300 200 100 0 25 ( C) 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 P DM 0.02 1 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7207 SO-8 Package Details D IM D -B - 5 8 E -A - 1 7 2 5 A 6 3 e 6X 5 H 0 .2 5 (.0 1 0 ) 4 M A M e1 -C - 0 .1 0 (.0 0 4 ) B 8X 0 .2 5 (.0 1 0 ) A1 L 8X 6 C 8X M C A S B S NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E .. M IN M AX .05 32 .06 88 1.3 5 1.75 .00 40 .00 98 0.1 0 0.25 B .01 4 .01 8 0.3 6 0.46 C .00 75 .009 8 0.19 0.25 D .18 9 .196 4.80 4.98 E .15 0 .15 7 3.8 1 3.99 e1 A M ILLIM E T E R S M AX A1 e K x 4 5 IN C H E S M IN .05 0 B A S IC 1.27 B A S IC .02 5 B A S IC 0 .635 B A S IC H .22 84 .244 0 K .01 1 .01 9 0.2 8 5.8 0 0.48 6.20 L 0.16 .05 0 0.4 1 1.27 0 8 0 8 R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X 6 .4 6 ( .2 5 5 ) 1 .7 8 (.0 7 0 ) 8X 1 .2 7 ( .0 5 0 ) 3X Part Marking 6 www.irf.com IRF7207 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 33 0.0 0 (1 2 .9 9 2 ) M AX . 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00 www.irf.com 7