VIN
VOUT
V+
+
-
+
-
V+
C = 200pF
SAMPLE
CLOCK
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LMV341-N
,
LMV342-N
,
LMV344-N
SNOS990H APRIL 2002REVISED JUNE 2016
LMV34x-N Single Rail-to-Rail Output CMOS Operation Amplifier With Shutdown
1
1 Features
1 Typical 2.7 V Supply Values (Unless Otherwise
Noted)
Ensured 2.7 V and 5 V Specifications
Input Referred Voltage Noise at 10 kHz:
29 nV/Hz
Supply Current (Per Amplifier): 100 µA
Gain Bandwidth Product: 1 MHz
Slew Rate: 1 V/µs
Shutdown Current (LMV341-N): 45 pA
Turnon Time From Shutdown (LMV341-N): 5 µs
Input Bias Current: 20 fA
2 Applications
Cordless or Cellular Phones
Laptops
PDAs
PCMCIA or Audio
Portable or Battery-Powered Electronic Equipment
Supply Current Monitoring
Battery Monitoring
Buffers
Filters
Drivers
Sample and Hold Circuit
3 Description
The LMV34x-N devices are single, dual, and quad
low-voltage, low-power operational amplifiers. They
are designed specifically for low-voltage portable
applications. Other important product characteristics
are low input bias current, rail-to-rail output, and wide
temperature range.
The patented class AB turnaround stage significantly
reduces the noise at higher frequencies, power
consumption, and offset voltage. The PMOS input
stage provides the user with ultra-low input bias
current of 20 fA (typical) and high input impedance.
The industrial-plus temperature range of 40°C to
125°C allows the LMV34x-N to accommodate a
broad range of extended environment applications.
LMV341-N expands Texas Instrument's Silicon Dust
amplifier portfolio offering enhancements in size,
speed, and power savings. The LMV34x-N devices
are specified to operate over the voltage range of
2.7 V to 5.5 V and all have rail-to-rail output.
The LMV341-N offers a shutdown pin that can be
used to disable the device. Once in shutdown mode,
the supply current is reduced to 45 pA (typical). The
LMV34x-N devices have 29-nV voltage noise at 10
KHz, 1 MHz GBW, 1-V/µs slew rate, 0.25 mVos, and
0.1-µA shutdown current (LMV341-N).
The LMV341-N is offered in the tiny 6-pin SC70
package, the LMV342-N in space-saving 8-pin
VSSOP and SOIC packages, and the LMV344-N in
14-pin TSSOP and SOIC packages. These small
package amplifiers offer an ideal solution for
applications requiring minimum PCB footprint.
Applications with area constrained PCB requirements
include portable electronics such as cellular handsets
and PDAs.
Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
LMV341-N SC70 (6) 2.00 mm × 1.25 mm
LMV342-N VSSOP (8) 3.00 mm × 3.00 mm
SOIC (8) 4.90 mm × 3.91 mm
LMV344-N TSSOP (14) 5.00 mm × 4.40 mm
SOIC (14) 8.64 mm × 3.91 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
2
LMV341-N
,
LMV342-N
,
LMV344-N
SNOS990H APRIL 2002REVISED JUNE 2016
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Product Folder Links: LMV341-N LMV342-N LMV344-N
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Table of Contents
1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 5
6.1 Absolute Maximum Ratings ...................................... 5
6.2 ESD Ratings.............................................................. 5
6.3 Recommended Operating Conditions....................... 5
6.4 Thermal Information.................................................. 5
6.5 Electrical Characteristics 2.7 V (DC) ..................... 6
6.6 Electrical Characteristics 2.7 V (AC)...................... 7
6.7 Electrical Characteristics 5 V (DC) ........................ 7
6.8 Electrical Characteristics 5 V (AC)......................... 8
6.9 Typical Characteristics.............................................. 9
7 Detailed Description............................................ 16
7.1 Overview................................................................. 16
7.2 Functional Block Diagram....................................... 16
7.3 Feature Description................................................. 16
7.4 Device Functional Modes........................................ 16
8 Application and Implementation ........................ 18
8.1 Application Information............................................ 18
8.2 Typical Application.................................................. 18
9 Power Supply Recommendations...................... 19
10 Layout................................................................... 20
10.1 Layout Guidelines ................................................. 20
10.2 Layout Example .................................................... 20
11 Device and Documentation Support................. 21
11.1 Device Support...................................................... 21
11.2 Documentation Support ........................................ 21
11.3 Related Links ........................................................ 21
11.4 Receiving Notification of Documentation Updates 21
11.5 Community Resources.......................................... 21
11.6 Trademarks........................................................... 21
11.7 Electrostatic Discharge Caution............................ 21
11.8 Glossary................................................................ 22
12 Mechanical, Packaging, and Orderable
Information........................................................... 22
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision G (March 2013) to Revision H Page
Added ESD Ratings table, Feature Description section, Device Functional Modes,Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section.................................................................................................. 1
Changed Thermal Information table....................................................................................................................................... 5
Changes from Revision F (March 2012) to Revision G Page
Changed layout of National Data Sheet to TI format ............................................................................................................. 1
V+
OUT
+IN
GND
-IN
6
4
1
2
3
+
-
SHDN
5
3
LMV341-N
,
LMV342-N
,
LMV344-N
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5 Pin Configuration and Functions
DCK Package
6-Pin SC70
Top View
(1) I = Input, O = Output, and P = Power
Pin Functions LMV341-N
PIN TYPE(1) DESCRIPTION
NAME NO.
+IN 1 I Noninverting input
–IN 3 I Inverting input
GND 2 P Negative supply input
OUT 4 O Output
V+6 P Positive supply input
SHDN 5 I Active low enable input
DGK or D Package
8-Pin VSSOP or SOIC
Top View
(1) I = Input, O = Output, and P = Power
Pin Functions LMV342-N
PIN TYPE(1) DESCRIPTION
NAME NO.
IN A+3 I Noninverting input, channel A
IN A2 I Inverting input, channel A
IN B+5 I Noninverting input, channel B
IN B6 I Inverting input, channel B
OUT A 1 O Output, channel A
OUT B 7 O Output, channel B
V+8 P Positive (highest) power supply
V4 P Negative (lowest) power supply
4
LMV341-N
,
LMV342-N
,
LMV344-N
SNOS990H APRIL 2002REVISED JUNE 2016
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PW or D Package
14-Pin TSSOP or SOIC
Top View
(1) I = Input, O = Output, and P = Power
Pin Functions LMV344-N
PIN TYPE(1) DESCRIPTION
NAME NO.
IN A+3 I Noninverting input, channel A
IN A2 I Inverting input, channel A
IN B+5 I Noninverting input, channel B
IN B6 I Inverting input, channel B
IN C+10 I Noninverting input, channel C
IN C9 I Inverting input, channel C
IN D+12 I Noninverting input, channel D
IN D13 I Inverting input, channel D
OUT A 1 O Output, channel A
OUT B 7 O Output, channel B
OUT C 8 O Output, channel C
OUT D 14 O Output, channel D
V+4 P Positive (highest) power supply
V11 P Negative (lowest) power supply
5
LMV341-N
,
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,
LMV344-N
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(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) Shorting output to V+will adversely affect reliability.
(4) Shorting output to V-will adversely affect reliability.
(5) The maximum power dissipation is a function of TJ(MAX), RθJA. The maximum allowable power dissipation at any ambient temperature is
PD= (TJ(MAX) TA) / RθJA. All numbers apply for packages soldered directly onto a PCB.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Differential input voltage ±Supply voltage
Supply voltage (V + V ) 6 V
Output short circuit to V +See(3)
Output short circuit to V See(4)
Lead temperature Infrared or convection reflow (20 s) 235 °C
Wave soldering (10 s) 260
Junction temperature, TJ(5) 150 °C
Storage temperature, Tstg –65 150 °C
(1) Human Body Model, applicable std. MIL-STD-883, Method 3015.7.
(2) Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22-
C101-C (ESD FICDM std. of JEDEC).
6.2 ESD Ratings VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM)(1) ±2000 V
Machine model (MM)(2) ±200
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT
Supply voltage 2.7 5.5 V
Temperature –40 125 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC(1)
LMV341-N LMV342-N LMV344-N
UNIT
DCK
(SC70) D
(SOIC) DGK
(VSSOP) D
(SOIC) PW
(TSSOP)
6 PINS 8 PINS 8 PINS 14 PINS 14 PINS
RθJA Junction-to-ambient thermal resistance 414 190 235 145 155 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 116.1 65.2 68.4 45.9 50.5 °C/W
RθJB Junction-to-board thermal resistance 53.3 61.4 98.8 44.1 66.2 °C/W
ψJT Junction-to-top characterization
parameter 8.8 16.1 9.8 10.2 6.3 °C/W
ψJB Junction-to-board characterization
parameter 52.7 60.8 97.3 43.7 65.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal
resistance °C/W
6
LMV341-N
,
LMV342-N
,
LMV344-N
SNOS990H APRIL 2002REVISED JUNE 2016
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(1) Electrical characteristic values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ= TA. No specification of parametric performance is indicated in the electrical tables
under conditions of internal self heating where TJ> TA.
(2) All limits are specified by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
6.5 Electrical Characteristics 2.7 V (DC)
TJ= 25°C, V+= 2.7 V, V= 0 V, VCM = V+/ 2, VO= V+/ 2, and RL> 1 M(unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
VOS Input offset voltage LMV341-N TJ= 25°C 0.25 4
mV
40°C TJ125°C 4.5
LMV342-N and
LMV344-N TJ= 25°C 0.55 5
40°C TJ125°C 5.5
TCVOS Input offset voltage
average drift 1.7 µV/°C
IBInput bias current TJ= 25°C 0.02 120 pA
-40°C TJ150°C 250
IOS Input offset current 6.6 fA
ISSupply current
Per amplifier TJ= 25°C 100 170
µA
40°C TJ125°C 230
Shutdown mode,
VSD = 0 V,
LMV341-N
TJ= 25°C 4.5 × 10–5 1
40°C TJ125°C 1.5
CMRR Common-mode rejection ratio 0 V VCM 1.7 V,
0 V VCM 1.6 V TJ= 25°C 56 80 dB
40°C TJ125°C 50
PSRR Power supply rejection ratio 2.7 V V+5 V TJ= 25°C 65 82 dB
40°C TJ125°C 60
VCM Input common-mode voltage For CMRR 50 dB V+ 1.9 1.7 V
V– 0 0.2
AVLarge signal voltage gain RL= 10 kto 1.35 V TJ= 25°C 78 113
dB
–40°C TJ125°C 70
RL= 2 kto 1.35 V TJ= 25°C 72 103
–40°C TJ125°C 64
VOOutput swing
RL= 2 kto 1.35 V
TJ= 25°C 24 60
mV
–40°C TJ125°C 95
TJ= 25°C 60 26
–40°C TJ125°C 95
RL= 10 kto 1.35 V
TJ= 25°C 5 30
–40°C TJ125°C 40
TJ= 25°C 30 5.3
–40°C TJ125°C 40
IOOutput short-circuit current Sourcing, LMV341-N and LMV342-N 20 32 mASourcing, LMV344-N 18 24
Sinking 15 24
ton Turnon time from shutdown LMV341-N 5 µs
VSD Shutdown pin voltage ON mode, LMV341-N 2.4 1.7 2.7 V
Shutdown mode, LMV341-N 0 1 0.8
7
LMV341-N
,
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,
LMV344-N
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(1) Electrical characteristic values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ= TA. No specification of parametric performance is indicated in the electrical tables
under conditions of internal self heating where TJ> TA.
(2) All limits are specified by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
(4) Connected as voltage follower with 2-VPP step input. Number specified is the slower of the positive and negative slew rates.
6.6 Electrical Characteristics 2.7 V (AC)
TJ= 25°C, V+= 2.7V, V= 0V, VCM = V+/ 2, VO= V+/ 2, and RL> 1 M(unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
SR Slew rate RL= 10 k(4) 1 V/µs
GBW Gain bandwidth product RL= 100 k, CL= 200 pF 1 MHz
ΦmPhase margin RL= 100 k72 °
GmGain margin RL= 100 k20 dB
enInput-referred voltage noise f = 1 kHz 40 nV/Hz
inInput-referred current noise f = 1 kHz 0.001 pA/Hz
THD Total harmonic distortion f = 1 kHz, AV= +1,
RL= 600 , VIN = 1VPP 0.017%
(1) Electrical characteristic values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ= TA. No specification of parametric performance is indicated in the electrical tables
under conditions of internal self heating where TJ> TA.
(2) All limits are specified by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
(4) RLis connected to mid-supply. The output voltage is GND + 0.2 V VOV+ 0.2 V
6.7 Electrical Characteristics 5 V (DC)
TJ= 25°C, V+= 5 V, V= 0 V, VCM = V+/ 2, VO= V+/ 2, and R L> 1 M(unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
VOS Input offset voltage LMV341-N TJ= 25°C 0.025 4
mV
–40°C TJ125°C 4.5
LMV342-N and LMV344-N TJ= 25°C 0.7 5
–40°C TJ125°C 5.5
TCVOS Input offset voltage
average drift 1.9 µV/°C
IBInput bias current TJ= 25°C 0.02 200 pA
–40°C TJ125°C 375
IOS Input offset current 6.6 fA
ISSupply current
Per amplifier TJ= 25°C 107 200
µA
–40°C TJ125°C 260
Shutdown mode,
VSD = 0 V,
LMV341-N
TJ= 25°C 0.033 1
–40°C TJ125°C 1.5
CMRR Common-mode rejection
ratio 0 V VCM 4 V,
0 V VCM 3.9 V TJ= 25°C 56 86 dB
–40°C TJ125°C 50
PSRR Power supply rejection ratio 2.7 V V+5 V TJ= 25°C 65 82 dB
–40°C TJ125°C 60
VCM Input common-mode voltage For CMRR 50 dB V+ 4.2 4 V
V– 0 0.2
AVLarge signal voltage gain(4) RL= 10 kto 2.5 V TJ= 25°C 78 116
dB
–40°C TJ125°C 70
RL= 2 kto 2.5 V TJ= 25°C 72 107
–40°C TJ125°C 64
8
LMV341-N
,
LMV342-N
,
LMV344-N
SNOS990H APRIL 2002REVISED JUNE 2016
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Electrical Characteristics 5 V (DC) (continued)
TJ= 25°C, V+= 5 V, V= 0 V, VCM = V+/ 2, VO= V+/ 2, and R L> 1 M(unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
VOOutput swing
RL= 2 kto 2.5 V
TJ= 25°C 32 60
mV
–40°C TJ125°C 95
TJ= 25°C 60 34
–40°C TJ125°C 95
RL= 10 kto 2.5 V
TJ= 25°C 7 30
–40°C TJ125°C 40
TJ= 25°C 30 7
–40°C TJ125°C 40
IOOutput short-circuit current Sourcing 85 113 mA
Sinking 50 75
ton Turnon time from shutdown LMV341-N 5 µs
VSD Shutdown pin voltage ON mode, LMV341-N 4.5 3.1 5 V
Shutdown mode, LMV341-N 0 1 0.8
(1) Electrical characteristic values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ= TA. No specification of parametric performance is indicated in the electrical tables
under conditions of internal self heating where TJ> TA.
(2) All limits are specified by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
(4) Connected as voltage follower with 2-VPP step input. Number specified is the slower of the positive and negative slew rates.
6.8 Electrical Characteristics 5 V (AC)
TJ= 25°C, V+= 5 V, V= 0 V, VCM = V+/ 2, VO= V+/ 2 and R L> 1 M(unless otherwise noted)(1)
PARAMETER CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
SR Slew rate RL= 10 k(4) 1 V/µs
GBW Gain-bandwidth product RL= 10 k, CL= 200 pF 1 MHz
ΦmPhase margin RL= 100 k70 deg
GmGain margin RL= 100 k20 dB
enInput-referred voltage noise f = 1 kHz 39 nV/Hz
inInput-referred current noise f = 1 kHz 0.001 pA/Hz
THD Total harmonic distortion f = 1 kHz, AV= +1,
RL= 600 , VIN = 1VPP 0.012%
0.001 0.01 0.1 110
0.01
0.1
1
10
100
ISOURCE (mA)
OUTPUT VOLTAGE REFERENCED TO V+ (V)
VS = 5V
125°C
85°C
-40°C
25°C
0.001 0.01 0.1 1 10
0.001
0.01
0.1
1
10
100
ISOURCE (mA)
OUTPUT VOLTAGE REFERENCED TO V+ (V)
25°C
125°C
85°C
-40°C
VS = 2.7 V
2.5 33.5 44.5 5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
OUTPUT VOLTAGE FROM
SUPPLY VOLTAGE (mV)
SUPPLY VOLTAGE (V)
RL = 10k:
NEGATIVE SWING
POSITIVE SWING
2.5 3 3.5 44.5 5
50
60
70
80
90
100
110
120
130
140
150
SUPPLY CURRENT (PA)
SUPPLY VOLTAGE (V)
125°C
85°C
25°C
-40°C
-40 -20 020 40 60 80 100 120 140
.001
.01
.1
1
10
100
1000
INPUT CURRENT (pA)
TEMPERATURE (C°)
VS = 5 V
9
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,
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6.9 Typical Characteristics
Figure 1. Supply Current vs Supply Voltage (LMV341-N) Figure 2. Input Current vs Temperature
Figure 3. Output Voltage Swing vs Supply Voltage Figure 4. Output Voltage Swing vs Supply Voltage
Figure 5. ISOURCE vs VOUT Figure 6. ISOURCE vs VOUT
-1.5 -1 -0.5 00.5 11.5
OUTPUT VOLTAGE (V)
-300
-200
-100
0
100
200
300
INPUT VOLTAGE (PV)
VS = ±1.35V
RL = 10 k:
RL = 2 k:
-3 -2 -1 0123
OUTPUT VOLTAGE (V)
-300
-200
-100
0
100
200
300
INPUT VOLTAGE (PV)
VS = ±2.5V
RL = 10 k:
RL = 2 k:
-0.2 0.5 11.5 22.5 33.5 44.5
VOS (mV)
VCM (V)
0
0.5
1
1.5
2
2.5
3VS = 5V -40°C
25°C
85°C
125°C
-0.2 0.3 0.8 1.3 1.8 2.3
0
0.5
1
1.5
2
2.5
3
VOS (mV)
VCM (V)
VS = 2.7V
125°C
85°C
25°C
-40°C
0.001 0.01 0.1 1 10
0.001
0.01
0.1
1
10
100
ISINK (mA)
OUTPUT VOLTAGE REFERENCED TO V- (V)
VS = 2.7V -40°C
25°C
125°C
85°C
0.001 0.01 0.1 1 10
0.01
0.1
1
10
100
ISINK (mA)
OUTPUT VOLTAGE REFERENCED TO V- (V)
VS = 5V
125°C
25°C
85°C
-40°C
10
LMV341-N
,
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,
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Typical Characteristics (continued)
Figure 7. ISINK vs VOUT Figure 8. ISINK vs VOUT
Figure 9. VOS vs VCM Figure 10. VOS vs VCM
Figure 11. VIN vs VOUT Figure 12. VIN vs VOUT
-40 -20 020 40 60 80 100 120 140
0
0.2
0.4
0.6
0.8
1
1.2
SLEW RATE (V/Ps)
TEMPERATURE (°)
RISING EDGE
FALLING EDGE
AV = +1
RL = 10k:
VIN = 2VPP
VS = 2.7V
-40 -20 020 40 60 80 100 120 140
0
0.2
0.4
0.6
0.8
1
1.2
SLEW RATE (V/Ps)
TEMPERATURE (°)
RISING EDGE
FALLING EDGE
AV = +1
RL = 10k:
VIN = 2VPP
VS = 5V
2.5 33.5 44.5 5
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
SLEW RATE (V/Ps)
SUPPLY VOLTAGE (V)
FALLING EDGE
RISING EDGE
AV = +1
RL = 10k:
VIN = 2VPP
10 100 1k 10k
FREQUENCY (Hz)
0
40
200
260
240
220
80
60
20
120
140
160
180
100
INPUT VOLTAGE NOISE (nV/ Hz)
VS = 5V
VS = 2.7V
VCM = VS/2
100 1k 10k 100k 1M
FREQUENCY (Hz)
0
10
20
30
40
50
60
70
80
CMRR (dB)
VIN = VS/2
RL= 5kΩ
VS= 2.7V
VS=5V
100 10k 10M
FREQUENCY (Hz)
0
20
100
PSRR (dB)
1M
100k
1k
90
50
10
80
60
40
30
70
RL = 5 k:
VS = 5 V, +PSRR
VS = 2.7 V, -PSRR
VS = 5 V, -PSRR
VS = 2.7 V, +PSRR
11
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SNOS990H APRIL 2002REVISED JUNE 2016
Product Folder Links: LMV341-N LMV342-N LMV344-N
Submit Documentation FeedbackCopyright © 2002–2016, Texas Instruments Incorporated
Typical Characteristics (continued)
Figure 13. CMRR vs Frequency Figure 14. PSRR vs Frequency
Figure 15. Input Voltage Noise vs Frequency Figure 16. Slew Rate vs VSUPPLY
Figure 17. Slew Rate vs Temperature Figure 18. Slew Rate vs Temperature
1k 10k 100k 1M 10M
FREQUENCY (Hz)
-60
-40
-20
0
20
40
60
80
100
GAIN (dB)
PHASE
GAIN
-60
-40
-20
0
20
40
60
80
100
PHASE
(°)
VS = 5V
RL = 600:
RL = 2k:
RL = 100k:
RL = 600:
RL = 2k:
RL = 100k:
1k 10k 100k 1M 10M
FREQUENCY (Hz)
-60
-40
-20
0
20
40
60
80
100
GAIN (dB)
PHASE
GAIN
VS = 5V
RL = 600:
CL = 1000pF
CL = 500pF
CL = 0
CL = 100pF
CL = 1000pF
CL = 500pF
CL = 100pF CL = 0 -60
-40
-20
0
20
40
60
80
10
0
PHASE
(°)
1k 10k 100k 1M 10M
FREQUENCY (Hz)
-60
-40
-20
0
20
40
60
80
100
GAIN (dB)
PHASE
GAIN
-60
-40
-20
0
20
40
60
80
100
PHASE
(°)
VS = 5V
RL = 2k:
125°C
25°C
-40°C
125°C
-40°C
25°C
1k 10k 100k 1M 10M
FREQUENCY (Hz)
-60
-40
-20
0
20
40
60
80
100
GAIN (dB)
PHASE
GAIN
-60
-40
-20
0
20
40
60
80
100
PHASE
(°)
VS = 2.7V
RL = 600:
RL = 2k:
RL = 100k:
RL = 600:
RL = 2k:
RL = 100k:
110 100 1k 100k
FREQUENCY (Hz)
0.001
0.01
1
10
THD+N (%)
10k
0.1
AV = +10
AV = +1
VS = 2.7V, VO = 1VPP
VS = 5V, VO = 2.5VPP
VS = 2.7V, VO = 1VPP
VS = 5V, VO = 1VPP
0.00
1
0.0
10.1 110
VO(VPP)
0.01
0.1
1
10
THD+N (%)
f = 10KHz
RL= 600Ω
VS= 2.7V, A V= +10
VS= 5V, AV= +10
VS= 5V, AV=+1
VS= 2.7V, AV= +1
12
LMV341-N
,
LMV342-N
,
LMV344-N
SNOS990H APRIL 2002REVISED JUNE 2016
www.ti.com
Product Folder Links: LMV341-N LMV342-N LMV344-N
Submit Documentation Feedback Copyright © 2002–2016, Texas Instruments Incorporated
Typical Characteristics (continued)
Figure 19. THD+N vs Frequency Figure 20. THD+N vs VOUT
Figure 21. Open-Loop Frequency Over Temperature Figure 22. Open-Loop Frequency Response
Figure 23. Open-Loop Frequency Response Figure 24. Gain and Phase vs CL
OUTPUT SIGNAL
TIME (4 Ps/div)
INPUT SIGNAL
(1 V/div)
TA = 25°C
RL = 2k:
VS = ±2.5V
OUTPUT SIGNAL
TIME (4 Ps/div)
INPUT SIGNAL
(50 mV/div)
TA = 125°C
RL = 2k:
VS = ±2.5V
-2.5 -2 -1.5 -1 -0.5 00.5 11.5
0
200
CAPACITIVE LOAD (pF)
VO (V)
20
40
60
80
100
120
140
160
180 VS = ±2.5
AV = +1
RL = 1M:
VO = 100mVPP
OUTPUT SIGNAL
TIME (4 Ps/div)
INPUT SIGNAL
(50 mV/div)
TA = 25°C
RL = 2k:
VS = ±2.5V
1k 10k 100k 1M 10M
FREQUENCY (Hz)
-60
-40
-20
0
20
40
60
80
100
GAIN (dB)
PHASE
GAIN
VS = 5V
RL = 100k:
CL = 1000pF
CL = 500pF
CL = 0
CL = 100pF
CL = 1000pF
CL = 500pF
CL = 100pF
CL = 0
-60
-40
-20
0
20
40
60
80
100
PHASE
(°)
-2.5 -2 -1.5 -1 -0.5 0 0.5 11.5
VO (V)
0
0.5
1
1.5
2
2.5
3
3.5
4
CAPACITIVE LOAD (nF)
VS = ±2.5V
AV = +1
RL = 2k:
VO = 100mVPP
13
LMV341-N
,
LMV342-N
,
LMV344-N
www.ti.com
SNOS990H APRIL 2002REVISED JUNE 2016
Product Folder Links: LMV341-N LMV342-N LMV344-N
Submit Documentation FeedbackCopyright © 2002–2016, Texas Instruments Incorporated
Typical Characteristics (continued)
Figure 25. Gain and Phase vs CLFigure 26. Stability vs Capacitive Load
Figure 27. Stability vs Capacitive Load Figure 28. Noninverting Small Signal Pulse Response
Figure 29. Noninverting Large Signal Pulse Response Figure 30. Noninverting Small Signal Pulse Response