2N3904 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 3
www.unisonic.com.tw QW-R201-027,C
ABSOLUTE MAXIMUM RATING (Ta=25°С)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 200 mA
Collector Dissipation PC 625 mW
Junction Temperature TJ 150 °С
Operating and Storage Temperature TSTG -55 ~ +150 °С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=10μA, IE=0 60 V
Collector-Emitter Breakdown Voltage (note) BVCEO IC=1mA,IB=0 40 V
Emitter-Base Breakdown Voltage BVEBO IE=10μA, IC=0 6 V
VCE(SAT)1 IC=10mA, IB=1mA 0.2 V
Collector-Emitter Saturation Voltage (note) VCE(SAT)2 IC=50mA, IB=5mA 0.3 V
VBE(SAT)1 IC=10mA, IB=1mA 0.65 0.85 V
Base-Emitter Saturation Voltage (note) VBE(SAT)2 IC=50mA, IB=5mA 0.95 V
Collector Cut-off Current ICBO V
CE=30V, VEB=3V 50 nA
Base Cut-off Current IBL V
CE=30V, VEB=3V 50 nA
hFE1 V
CE=1V, IC=0.1mA 40
hFE2 V
CE=1V, IC=1mA 70
hFE3 V
CE=1V, IC=10mA 100 300
hFE4 V
CE=1V, IC=50mA 60
DC Current Gain (note)
hFE5 V
CE=1V, IC=100mA 30
Current Gain Bandwidth Product fT V
CE=20V, IC=10mA, f=100MHz 300 MHz
Output Capacitance Cob V
CB=5V, IE=0, f=1MHz 4 pF
Turn on Time tON VCC=3V,VBE=0.5V,IC=10mA,
IB1=1mA 70 ns
Turn off Time tOFF I
B1=1B2=1mA 250 ns
Note: Pulse test: Pulse Width≦300μs, Duty Cycle≦2%