UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC(MAX)=625mW * Complementary to 2N3906 Lead-free: 2N3904L Halogen-free:2N3904G ORDERING INFORMATION Ordering Number Normal 2N3904-T92-B 2N3904-T92-K Lead Free Plating 2N3904L-T92-B 2N3904L-T92-K Halogen Free 2N3904G-T92-B 2N3904G-T92-K www.unisonic.com.tw Copyright (c) 2009 Unisonic Technologies Co., Ltd Package TO-92 TO-92 Pin Assignment 1 E E 2 B B 3 C C Packing Tape Box Bulk 1 of 3 QW-R201-027,C 2N3904 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 Operating and Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=10A, IE=0 Collector-Emitter Breakdown Voltage (note) BVCEO IC=1mA,IB=0 Emitter-Base Breakdown Voltage BVEBO IE=10A, IC=0 VCE(SAT)1 IC=10mA, IB=1mA Collector-Emitter Saturation Voltage (note) VCE(SAT)2 IC=50mA, IB=5mA VBE(SAT)1 IC=10mA, IB=1mA Base-Emitter Saturation Voltage (note) VBE(SAT)2 IC=50mA, IB=5mA Collector Cut-off Current ICBO VCE=30V, VEB=3V Base Cut-off Current IBL VCE=30V, VEB=3V hFE1 VCE=1V, IC=0.1mA hFE2 VCE=1V, IC=1mA hFE3 VCE=1V, IC=10mA DC Current Gain (note) MIN TYP MAX UNIT 60 V 40 V 6 V 0.2 V 0.3 V 0.65 0.85 V 0.95 V 50 nA 50 nA 40 70 100 300 hFE4 VCE=1V, IC=50mA 60 Current Gain Bandwidth Product Output Capacitance hFE5 fT Cob 30 300 Turn on Time tON VCE=1V, IC=100mA VCE=20V, IC=10mA, f=100MHz VCB=5V, IE=0, f=1MHz VCC=3V,VBE=0.5V,IC=10mA, IB1=1mA IB1=1B2=1mA Turn off Time tOFF Note: Pulse test: Pulse Width300s, Duty Cycle2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 MHz pF 70 ns 250 ns 2 of 3 QW-R201-027,C 2N3904 hFE vs. IC DC Current Gain, hFE 240 200 VCE=1V 160 120 80 40 0 0.1 0.3 0.5 1 3 5 10 30 50100 Collector Current, IC (mA) fT vs. IC 1000 500 300 VCE=20V 100 50 30 10 0.1 0.3 0.5 1 3 5 10 30 50100 Collector Current, IC (mA) Capacitance, Cob (pF) Current Gain-Bandwidth Product, fT (MHz) TYPICAL CHARACTERISTICS Saturation Voltage, VBE(SAT), VCE(SAT) NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R201-027,C