STE40NC60 - STMicroelectronics

1/8May 2002

STE40NC60

N-CHANNEL 600V - 0.098Ω - 40A IS OT OP

PowerMesh™II MOSFET

TYPICAL RDS(on) = 0.098 Ω

EXTREMEL Y HIGH dv /dt CAPABIL IT Y

100% AVALANCHE TESTED

NEW HIGH VOLTAGE BENCHMARK

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH™II is the evolution of the first

generation of MESH OVERLAY™. The layout re-

finements introduced greatly improve t he Ron*area

figure of merit while keeping the device at t he lea d-

ing edge for what concerns swithing speed, gate

charge and ruggedne ss.

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING

SWIT H MODE PO WER SUPPLIES ( SMPS)

DC-AC CONVE RTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

ABSOLUTE MAXIMUM RATINGS

(•) Pu l se w i dth lim i ted by saf e oper ating ar ea

TYPE VDSS RDS(on) ID

STE40NC60 600V < 0.13Ω40 A

Symbol Parameter Value Unit

VDS Drain-source Voltage (VGS = 0) 600 V

VDGR Drain-gate Voltage (RGS = 20 kΩ)600 V

VGS Gate- sourc e Voltage ±30 V

IDDrain Current (continuos) at TC = 25°C 40 A

IDDrain Current (continuos) at TC = 100°C 23 A

IDM (

)Drain Current (pulsed) 160 A

PTOT Total Dissipation at TC = 25°C 460 W

Derating Factor 3.68 W/°C

dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns

VISO Insulation Winthstand Voltage (AC-RMS) 2500 V

Tstg Storage Temperature –65 to 150 °C

TjMax. Operating Junction Temperature 150 °C

(1) I SD≤ 40A, di/dt≤1 00 A/µs, V DD≤ 24 V, T j≤TjMAX

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

STE40NC60

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THE RMAL D A TA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Note: 1. Pul sed: Pu l se dura tion = 300 µs, duty cycl e 1.5 %.

Rthj-case Thermal Resistance Junction-case Max 0.272 °C/W

Rthc-h Thermal Resistance Case-heatsink with Conductive

Grease Applied 0.05 °C/W

Symbol Paramet er Max Value Unit

IAR Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max) 40 A

EAS Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V) 1150 mJ

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source

Breakdown Voltage ID = 250 µA, VGS = 0 600 V

IDSS Zero Gate Voltage

Drain Current (VGS = 0) VDS = Max Rating 10 µA

VDS = Max Rating, TC = 125 °C 100 µA

IGSS Gate-body Leakage

Current (VDS = 0) VGS = ± 30V ±100 nA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 234V

DS(on) Static Drain-source On

Resistance VGS = 10V, ID = 20A 0.098 0.130 Ω

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max,

ID= 15 A 42 S

Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 11.1 nF

Coss Output Capacitance 1190 pF

Crss Reverse Transfer

Capacitance 100 pF

3/8

STE40NC60

ELECTRICAL CHARACTERI STI CS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIO DE

Note: 1. Pulsed: Pu l se duration = 30 0 µs, dut y cycle 1.5 %.

2. Pulse widt h l i m i ted by safe operati ng area .

Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(on) Turn-on Delay Time VDD = 300 V, ID = 20 A

RG= 4.7Ω VGS = 10V

(see test circuit, Figure 3)

49 ns

trRise Time 42 ns

QgTotal Gate Charge VDD = 480V, ID = 40A,

VGS = 10V 307.5 430 nC

Qgs Gate-Source Charge 48 nC

Qgd Gate-Drain Charge 146.5 nC

Symbo l Param eter Test Cond itions Min. Typ. Max. U nit

tr(Voff) Off-voltage Rise Time VDD = 480V, ID = 40A,

RG= 4.7Ω, VGS = 10V

(see test circuit, Figure 5)

41 ns

tfFall Time 26 ns

tcCross-over Time 74 ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

ISD Source-drain Current 40 A

ISDM (2) Source-drain Current (pulsed) 160 A

VSD (1) Forward On Volta ge ISD = 40A, VGS = 0 1.6 V

trr Reverse Reco very Time ISD = 40 A, di/dt = 100 A/µs,

VDD = 40 V, Tj = 150 °C

(see test circuit, Figure 5)

685 ns

Qrr Reverse Reco very Charg e 15 µC

IRRM Reverse Reco very Curren t 44 A

Safe Op erating Are a Thermal Impedence

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Capacitance VariationsGate Charge vs Gate-so urc e Voltage

Static Drain-source On Resis tance

Transfer Characteristics

Transconductance

Output Characteristics

5/8

STE40NC60

Normalized On Resistance vs Temp eratu re

Source-drain Diode Forward Characteristics

Normalized Gate Thereshold Voltage vs Temp.

STE40NC60

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Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

Fig. 4: Gat e Charge test Circuit

Fig. 2: Unc lamped I nduct ive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistiv e Load

7/8

STE40NC60

DIM. mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 11.8 12.2 0.466 0.480

B 8.9 9.1 0.350 0.358

C 1.95 2.05 0.076 0.080

D 0.75 0.85 0.029 0.033

E 12.6 12.8 0.496 0.503

F 25.15 25.5 0.990 1.003

G 31.5 31.7 1.240 1.248

H4 0.157

J 4.1 4.3 0.161 0.169

K 14.9 15.1 0.586 0.594

L 30.1 30.3 1.185 1.193

M 37.8 38.2 1.488 1.503

N4 0.157

O 7.8 8.2 0.307 0.322

ISOTOP MECHANICAL DATA

STE40NC60

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