A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TC = 25 OC
NONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCEO IC = 200 mA 35 V
BVCES IC = 100 mA 85 V
BVCBO IC = 100 mA 85 V
BVEBO IE = 10 mA 3.0 V
ICES VCE = 28 V 20 mA
hFE VCE = 5.0 V IC = 5.0 A 10 30 120 ---
Cob VCB = 28 V f = 1.0 MHz 420 pF
Pout VCE = 28 V f = 30 MHz 150 W(PEP)
GPE
η
ηη
η
IMD
VCC = 28 V ICQ = 150 mA Pout = 150 W (PEP)
IC(max) = 6.7 A f = 30 MHz
10 13
45
-33
dB
%
dB
NPN SILICON RF POWER TRANSISTOR
MRF422
DESCRIPTION:
The ASI MRF422 is Designed f or 2.0
MHz to 30 MHz, 28 V High Power
Linear Amplifier Applications.
MAXIMUM RATINGS
I 20 A
V 40 V
PDISS 290 W @ TC = 25 OC
TJ -65 OC to +150 OC
TSTG -65 OC to +150 OC
θ
θθ
θJC 0.6 OC/W
PACKAGE STYLE .500 4L FLG
1 = COLLECTOR 3 = BASE
2 & 4 = EMITTER
