Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 6
1Publication Order Number:
MMSZ4678ET1/D
MMSZ4xxxET1G Series,
SZMMSZ4xxxET1G Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
Features
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range − 1.8 V to 43 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Peak Power − 225 W (8 x 20 ms)
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Power Dissipation @ 20 ms (Note 1)
@ TL 25C
Ppk 225 W
Total Power Dissipation on FR−5 Board,
(Note 2) @ TL = 75C
Derated above 75C
PD500
6.7
mW
mW/C
Thermal Resistance, (Note 3)
Junction−to−Ambient
RqJA 340
C/W
Thermal Resistance, (Note 3)
Junction−to−Lead
RqJL 150
C/W
Junction and Storage Temperature Range TJ, Tstg −55 to
+150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11.
2. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
3. Thermal Resistance measurement obtained via infrared Scan Method.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOD−123
CASE 425
STYLE 1
1
Cathode
2
Anode
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
http://onsemi.com
MARKING DIAGRAM
xxx = Device Code (Refer to page 2)
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
xxx M G
G
1
Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMSZ4xxxET1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel
MMSZ4xxxET3G SOD−123
(Pb−Free)
10,000 /
Tape & Reel
SZMMSZ4xxxET1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel
MMSZ4xxxET1G Series, SZMMSZ4xxxET1G Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless
otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IF
Zener Voltage Regulator
IF
V
I
IR
IZT
VR
VZ
VF
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Device*
Device
Marking
Zener Voltage (Note 1) Leakage Current
VZ (V) @ IZT IR @ VR
Min Nom Max mAmAV
MMSZ4680ET1G CF8 2.09 2.2 2.31 50 4 1
MMSZ4684ET1G CG3 3.13 3.3 3.47 50 7.5 1.5
MMSZ4688ET1G CG7 4.47 4.7 4.94 50 10 3
MMSZ4689ET1G CG8 4.85 5.1 5.36 50 10 3
MMSZ4690ET1G CG9 5.32 5.6 5.88 50 10 4
MMSZ4691ET1G CH1 5.89 6.2 6.51 50 10 5
MMSZ4692ET1G CH2 6.46 6.8 7.14 50 10 5.1
MMSZ4693ET1G CH3 7.13 7.5 7.88 50 10 5.7
MMSZ4697ET1G CH7 9.50 10 10.50 50 1 7.6
MMSZ4699ET1G CH9 11.40 12 12.60 50 0.05 9.1
MMSZ4701ET1G CJ2 13.3 14 14.7 50 0.05 10.6
MMSZ4702ET1G CJ3 14.25 15 15.75 50 0.05 11.4
MMSZ4703ET1G CJ4 15.20 16 16.80 50 0.05 12.1
MMSZ4705ET1G CJ6 17.10 18 18.90 50 0.05 13.6
MMSZ4709ET1G CK1 22.80 24 25.20 50 0.01 18.2
MMSZ4711ET1G CK3 25.65 27 28.35 50 0.01 20.4
MMSZ4717ET1G CK9 40.85 43 45.15 50 0.01 32.6
1. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C 1C.
*Include SZ-prefix devices where applicable.
MMSZ4xxxET1G Series, SZMMSZ4xxxET1G Series
http://onsemi.com
3
TYPICAL CHARACTERISTICS
VZ, TEMPERATURE COEFFICIENT (mV/ C)
VZ, NOMINAL ZENER VOLTAGE (V)
−3
−2
−1
0
1
2
3
4
5
6
7
8
12111098765432
Figure 1. Temperature Coefficients
(Temperature Range −55C to +150C)
TYPICAL TC VALUES
VZ @ IZT
VZ, TEMPERATURE COEFFICIENT (mV/ C)
100
10
110 100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 2. Temperature Coefficients
(Temperature Range −55C to +150C)
VZ @ IZT
1.2
1.0
0.8
0.6
0.4
0.2
01501251007550250
T, TEMPERATURE (C)
Figure 3. Steady State Power Derating
PD versus TA
PD versus TL
Ppk, PEAK SURGE POWER (WATTS)
0.1
PW, PULSE WIDTH (ms)
Figure 4. Maximum Nonrepetitive Surge Power
1 10 100 1000
1000
100
10
1
RECTANGULAR
WAVEFORM, TA = 25C
100
VZ, NOMINAL ZENER VOLTAGE
Figure 5. Effect of Zener Voltage on
Zener Impedance
101
ZZT, DYNAMIC IMPEDANCE ( )
1000
100
10
1
TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IZ = 1 mA
5 mA
20 mA
VF
, FORWARD VOLTAGE (V)
Figure 6. Typical Forward Voltage
1.21.11.00.90.80.70.60.50.4
IF, FORWARD CURRENT (mA)
1000
100
10
1
75 V (MMSZ5267BT1G)
91 V (MMSZ5270BT1G)
150C75C 25C 0C
TYPICAL TC VALUES
PD, POWER DISSIPATION (WATTS)
MMSZ4xxxET1G Series, SZMMSZ4xxxET1G Series
http://onsemi.com
4
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 7. Typical Capacitance
1000
100
10
1101
BIAS AT
50% OF VZ NOM
TA = 25C
0 V BIAS
1 V BIAS
12
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01 1086420
TA = 25C
IZ, ZENER CURRENT (mA)
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.0110 30 50 70 90
TA = 25C
IR, LEAKAGE CURRENT ( A)m
90
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 8. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001 80706050403020100
+150C
+25C
−55C
IZ, ZENER CURRENT (mA)
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
100
Figure 11. 8 20 ms Pulse Waveform
90
80
70
60
50
40
30
20
10
0020406080
t, TIME (ms)
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
% OF PEAK PULSE CURRENT
PEAK VALUE IRSM @ 8 ms
MMSZ4xxxET1G Series, SZMMSZ4xxxET1G Series
http://onsemi.com
5
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
ÂÂÂÂ
ÂÂÂÂ
E
b
DA
L
C
1
2
A1
DIM MIN NOM MAX
MILLIMETERS INCHES
A0.94 1.17 1.35 0.037
A1 0.00 0.05 0.10 0.000
b0.51 0.61 0.71 0.020
c
1.60
0.15
0.055D1.40 1.80
E2.54 2.69 2.84 0.100
---
3.68 0.140
L0.25
3.86
0.010
HE
0.046
0.002
0.024
0.063
0.106
0.145
0.053
0.004
0.028
0.071
0.112
0.152
MIN NOM MAX
3.56
HE
---
--- ---
0.006
--- ---
--- ---
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE
2. ANODE
1.22
0.048
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ǒmm
inchesǓ
SCALE 10:1
ÉÉ
ÉÉ
ÉÉ
q
--- ---
q00
10 10
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MMSZ4678ET1/D
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