PNP DARLIGNTON POWER SILICON TRANSISTORS BD676, 676A
BD678, 678A
BD680, 680A
BD682, 684
TO126
Plastic Package
For Use As Out
ut Devices In Com
lementar
General Pur
ose Am
lifier A
lications.
COMPLEMENTARY TO BD675
675A
677
677A
679
679A
681 & 683
BD678
678A
680
680A ARE EQUIVALENT TO MJE700
702
703.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBO
TEST CONDITION BD676 BD678 BD680 BD682 BD684 UNIT
BD676A BD678A BD680A
Collector -Base Voltage VCBO 45 60 80 100 120 V
Collector -Emitter Voltage VCEO 45 60 80 100 120 V
Emitter Base Voltage VEBO 5.0 V
Collector Current IC4.0 A
Base Current IB0.1 A
Collector Power Dissipation @ Tc=25ºC PD40 W
Derate above 25ºC 0.32 W/ºC
Operation and Storage Junction T
,Tst
-55 to +150 ºC
Temperature Range
THERMAL RESISTANCE
Junction to Case Rth
-c
3.13 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION BD676 BD678 BD680 BD682 BD684 UNIT
BD676A BD678A BD680A
Collector Emitter Voltage BVCEO*I
C=50mA, IB=0 >45 >60 >80 >100 >120 V
Collector Cut off Current ICEO VCE=Half RatedVCEO, <500 <500 <500 <500 >120 µA
IB=0
Collector Cut off Current ICBO VCB=Rated VCBO,IE=0 <0.2 <0.2 <0.2 <0.2 <0.2 mA
VCB=Rated VCBO,IE=0 <2 <2 <2 <2 <2 mA
Ta=100ºC
Emitter Cut off Current IEBO VEB=5V,IC=0 <2 <2 <2 <2 <2 mA
DC Current Gain hFE*
NON A IC=1.5A, VCE=3V <-------------- >750--------------->
AIC=2A, VCE=3V <----------------- >750----------------->
C
E
Transys
Electronics
LI
M
ITE
D