BDX53C - ON Semiconductor - Datasheet.Support

© Semiconductor Components Industries, LLC, 2007

November, 2007 - Rev. 13

1Publication Order Number:

BDX53B/D

BDX53B, BDX53C (NPN),

BDX54B, BDX54C (PNP)

Plastic Medium-Power

Complementary Silicon

Transistors

These devices are designed for general-purpose amplifier and

low-speed switching applications.

Features

•High DC Current Gain -

hFE = 2500 (Typ) @ IC = 4.0 Adc

•Collector Emitter Sustaining Voltage - @ 100 mAdc

VCEO(sus) = 80 Vdc (Min) - BDX53B, 54B

VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C

•Low Collector-Emitter Saturation Voltage -

VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc

VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc

•Monolithic Construction with Built-In Base-Emitter Shunt Resistors

•Pb-Free Packages are Available*

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Symbol

ÎÎÎÎ

Value

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector-Emitter Voltage

BDX53B, BDX54B

BDX53C, BDX54C

ÎÎÎ

VCEO

ÎÎÎÎ

80

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector-Base Voltage

BDX53B, BDX54B

BDX53C, BDX54C

ÎÎÎ

VCB

ÎÎÎÎ

80

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter-Base Voltage

ÎÎÎ

VEB

ÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current - Continuous

- Peak

ÎÎÎ

IC

ÎÎÎÎ

8.0

12

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎ

IB

ÎÎÎÎ

0.2

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25°C

Derate above 25°C

ÎÎÎ

PD

ÎÎÎÎ

65

0.48

ÎÎÎ

W

W/°C

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎ

TJ, Tstg

ÎÎÎÎ

-65 to +150

ÎÎÎ

°C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎ

Symbol

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction-to-Ambient

ÎÎÎ

RqJA

ÎÎÎÎ

70

ÎÎÎ

°C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction-to-Case

ÎÎÎ

RqJC

ÎÎÎÎ

1.92

ÎÎÎ

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

DARLINGTON

8 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

80-100 VOLTS, 65 WATTS

TO-220AB

CASE 221A

STYLE 1

123

4

MARKING DIAGRAM

& PIN ASSIGNMENT

1

Base

3

Emitter

4

Collector

2

Collector

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BDX5xy = Device Code

x = 3 or 4

y = B or C

A = Assembly Location

Y = Year

WW = Work Week

G = Pb-Free Package

BDX5xyG

AY WW

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

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2

80

40

20

020 40 80 100 120 160

Figure 1. Power Derating

T, TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

60

TATC

4.0

2.0

1.0

3.0

0 60 140

TA

TC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector-Emitter Sustaining Voltage (Note 1)

(IC = 100 mAdc, IB = 0) BDX53B, BDX54B

BDX53C, BDX54C

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

80

100

ÎÎÎÎ

-

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0) BDX53B, BDX54B

(VCE = 50 Vdc, IB = 0) BDX53C, BDX54C

ÎÎÎÎÎ

ICEO

ÎÎÎ

-

ÎÎÎÎ

0.5

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0) BDX53B, BDX54B

(VCB = 100 Vdc, IE = 0) BDX53C, BDX54C

ÎÎÎÎÎ

ICBO

ÎÎÎ

-

ÎÎÎÎ

0.2

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 3.0 Adc, VCE = 3.0 Vdc)

ÎÎÎÎÎ

hFE

ÎÎÎ

750

ÎÎÎÎ

-

ÎÎÎ

-

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector-Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 12 mAdc)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

-

ÎÎÎÎ

2.0

4.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base-Emitter Saturation Voltage

(IC = 3.0 Adc, IC = 12 mA)

ÎÎÎÎÎ

VBE(sat)

ÎÎÎ

-

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small-Signal Current Gain

(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

ÎÎÎÎÎ

hfe

ÎÎÎ

4.0

ÎÎÎÎ

-

ÎÎÎ

-

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDX53B, 53C

BDX54B, 54C

ÎÎÎÎÎ

Cob

ÎÎÎ

-

ÎÎÎÎ

300

200

ÎÎÎ

pF

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

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3

Figure 2. Switching Time Test Circuit

5.0

0.1

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)μ

3.0

0.7

0.5

0.3

0.2

0.05 0.2 0.3 0.7 3.0 10

td @ VBE(off) = 0 V

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

tf

0.07

1.0 5.0

ts

tr

0.1

1.0

2.0

0.5 2.0 7.0

0

VCC

-30 V

SCOPE

TUT

+4.0 V

tr, tf v 10 ns

DUTY CYCLE = 1.0%

RC

D1 MUST BE FAST RECOVERY TYPES, e.g.:

1N5825 USED ABOVE IB [ 100 mA

MSD6100 USED BELOW IB [ 100 mA

25 ms

D1

51

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

V2

APPROX

+8.0 V

V1

APPROX

-12 V

[ 8.0 k [ 120

for td and tr, D1 is disconnected

and V2 = 0

For NPN test circuit reverse all polarities

RB

Figure 4. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

r(t) EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

RqJC(t) = r(t) RqJC

RqJC = 1.92°C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

SINGLE

PULSE

0.03 0.3 3.0 30 300

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

1.0

Figure 5. Active-Region Safe Operating Area

20

2.0

0.05

10 20 100

TJ = 150°C

0.2

5.0

0.5

IC

, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

30 70

1.0

0.1

dc

2.0 503.0 5.0 7.0

5.0 ms

1.0 ms

100 ms

BDX53B, BDX54B

BDX53C, BDX54C

CURVES APPLY BELOW RATED VCEO

0.02

500 ms

There are two limitations on the power handling ability of

a transistor average junction temperature and second

breakdown. Safe operating area curves indicate IC -VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150°C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided

TJ(pk) t 150°C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

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4

10,000

1.0

Figure 6. Small‐Signal Current Gain

f, FREQUENCY (kHz)

10 2.0 5.0 10 20 50 100 200 1000

500

300

100

5000

hFE, SMALL-SIGNAL CURRENT GAIN

20

3000

200

500

2000

1000

30

50

TJ = 25°C

VCE = 3.0 V

IC = 3.0 A

300

0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

30 1.0 2.0 5.0 20 10010

C, CAPACITANCE (pF)

200

100

70

50

TJ = + 25°C

Cib

Cob

500.2 0.5

PNP

NPN

PNP

NPN

0.1

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 0.7 1.0 2.0 10

500

300

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

-55°C

VCE = 4.0 V

200 7.0

NPN

BDX53B, 53C

PNP

BDX54B, 54C

20,000

5000

10,000

3000

2000

1000

3.0 5.0 0.1

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 0.7 1.0 2.0 10

500

300

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

-55°C

200 7.0

20,000

5000

10,000

3000

2000

1000

3.0 5.0

VCE = 4.0 V

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 9. Collector Saturation Region

3.0

IB, BASE CURRENT (mA)

0.3 0.5 1.0 2.0 3.0 5.0 7.0 30

2.6

2.2

1.8

1.4

IC = 2.0 A

TJ = 25°C

4.0 A 6.0 A

1.0 0.7 2010

3.0

IB, BASE CURRENT (mA)

0.3 0.5 1.0 2.0 3.0 5.0 7.0 30

2.6

2.2

1.8

1.4

IC = 2.0 A

TJ = 25°C

4.0 A 6.0 A

1.0 0.7 2010

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

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IC, COLLECTOR CURRENT (AMP)

VBE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 10. “On” Voltages

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

TJ = 25°C

VBE @ VCE = 4.0 V

VCE(sat) @ IC/IB = 250

TJ = 25°C

0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0

3.0

2.5

2.0

1.5

1.0

0.5

3.0

2.5

2.0

1.5

1.0

0.5

V, TEMPERATURE COEFFICIENT (mV/ C)°θ

+5.0

Figure 11. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

0.1 0.2 0.3 1.0 2.0 3.0 5.0 7.0 10

-55 to 150°C

+4.0

+3.0

+1.0

0

-4.0

-1.0

-2.0

-3.0

-5.0

qVB for VBE

*qVC for VCE(sat)

-55°C to 25°C

25°C to 150°C

*IC/IB v hFE/3

0.5 0.7

+2.0

NPN

BDX53B, BDX53C

PNP

BDX54B, BDX54C

+5.0

IC, COLLECTOR CURRENT (AMP)

0.1 0.2 0.3 1.0 2.0 3.0 5.0 7.0 10

-55 to 150°C

+4.0

+3.0

+1.0

0

-4.0

-1.0

-2.0

-3.0

-5.0

qVB for VBE

*qVC for VCE(sat)

-55°C to 25°C

25°C to 150°C

*IC/IB v hFE/3

0.5 0.7

+2.0

Figure 12. Collector Cut-Off Region

105

VBE, BASE‐EMITTER VOLTAGE (VOLTS)

102

101

100

, COLLECTOR CURRENT (A)μIC

10-1

+0.2 +0.40-0.2-0.4-0.6

VCE = 30 V

REVERSE FORWARD

103

104

+0.6 +0.8 +1.0 +1.2 + 1.4

TJ = 150°C

100°C

25°C

105

VBE, BASE‐EMITTER VOLTAGE (VOLTS)

102

101

100

, COLLECTOR CURRENT (A)μIC

10-1

-0.2 -0.40+0.2+0.4+0.6

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

103

104

-0.6 -0.8 -1.0 -1.2 -1.4

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

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Figure 13. Darlington Schematic

NPN

BDX53B

BDX53C

PNP

BDX54B

BDX54C

BASE

COLLECTOR

EMITTER

[ 8.0 k [ 120

BASE

COLLECTOR

EMITTER

[ 8.0 k [ 120

ORDERING INFORMATION

Device Package Shipping†

BDX53B TO-220

50 Units / Rail

BDX53BG TO-220

(Pb-Free)

BDX53C TO-220

50 Units / Rail

BDX53CG TO-220

(Pb-Free)

BDX54B TO-220

50 Units / Rail

BDX54BG TO-220

(Pb-Free)

BDX54C TO-220

50 Units / Rail

BDX54CG TO-220

(Pb-Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

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PACKAGE DIMENSIONS

TO-220

CASE 221A-09

ISSUE AE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.014 0.025 0.36 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

B

Q

H

Z

L

V

G

N

A

K

F

123

4

D

SEATING

PLANE

-T-

C

S

T

U

R

J

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