BM2301
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2-1
P-Channel 1.25-W, 2.5-V MOSFET
VDS (V) rDS(on) () ID (A)
–20 0.130 @ VGS = –4.5 V –2.3
–20 0.190 @ VGS = –2.5 V –1.9
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Si2301DS (A1)*
*Marking Code
Parameter Symbol Limit Unit
Drain-Source Voltage VDS –20 V
Gate-Source V oltage VGS 8V
Continuous Drain Current (TJ = 150C)bTA= 25CID–2.3
A
Continuous Drain Current (TJ = 150C)bTA= 70CID–1.5 A
Pulsed Drain CurrentaIDM –10 A
Continuous Source Current (Diode Conduction)bIS–1.6
Power DissipationbTA= 25CPD1.25 WPower DissipationbTA= 70CPD0.8 W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 C
Parameter Symbol Limit Unit
Maximum Junction-to-AmbientbRthJA 100
C/W
Maximum Junction-to-AmbientcRthJA 166
C/W
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t 5 sec.
c. Surface Mounted on FR4 Board.
BM2301
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –250 mA –20
V
Gate-Threshold V oltage VGS(th) VDS = VGS, ID = –250 mA–0.45 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = –16 V, VGS = 0 V –1
mA
Zero
Gate
Voltage
Drain
Current
I
DSS VDS = –16 V, VGS = 0 V, TJ = 55C –10 m
A
On
-
State Drain Current
a
ID(on)
VDS v –5 V, VGS = –4.5 V –6
A
On
-
State
Drain
Currenta
I
D(on) VDS v –5 V, VGS = –2.5 V –3
A
Drain Source On Resistancea
rDS( )
VGS = –4.5 V, ID = –2.8 A 0.105 0.130
W
Drain-Source On-ResistancearDS(on) VGS = –2.5 V, ID = –2.0 A 0.145 0.190 W
Forward T ransconductance agfs VDS = –5 V, ID = –2.8 A 6.5 S
Diode Forward V oltage VSD IS = –1.6 A, VGS = 0 V –0.80 –1.2 V
Dynamicb
Total Gate Charge Qg
V6VV45V
5.8 10
C
Gate-Source Charge Qgs VDS = –6 V, VGS = –4.5 V
ID ^ –2.8 A 0.85 nC
Gate-Drain Charge Qgd
ID ^ 2.8 A
1.70
Input Capacitance Ciss
V6VV0f1MH
415
F
Output Capacitance Coss VDS = –6 V, VGS = 0, f = 1 MHz 223 pF
Reverse T ransfer Capacitance Crss 87
Switchingc
Turn
-
On T ime
td(on)
V6VR6W
13.0 25
Turn
-
On
Time
trVDD = –6 V, RL = 6 W
ID
^
–
1.0 A, VGEN
=
–
4.5 V
36.0 60
ns
Turn
-
Off Time
td(off)
I
D
^
–
1
.
0
A
,
V
GEN = –
4
.
5
V
RG = 6 W42 70
ns
Turn
-
Off
Time
tf34 60
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONL Y, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
BM2301
www.vishay.com FaxBack 408-970-5600
2-3
On-Resistance vs. Drain Current
Output Characteristics T ransfer Characteristics
VDS – Drain-to-Source Voltage (V)
– Drain Current (A)I D
VGS – Gate-to-Source Voltage (V)
– Drain Current (A)I D
0
2
4
6
8
10
012345 0
2
4
6
8
10
0 0.5 1.0 1.5 2.0 2.5 3.0
TC = –55C
125C
0, 0.5, 1 V
2.5 V
VGS = 5, 4.5, 4, 3.5, 3 V
1.5 V
2 V
0
200
400
600
800
1000
036912
0.6
0.8
1.0
1.2
1.4
1.6
1.8
–50 0 50 100 150
0
1
2
3
4
5
02468
0
0.1
0.2
0.3
0.4
0.5
0.6
0246810
Gate Charge
– Gate-to-Source Voltage (V)
Qg – Total Gate Charge (nC)
VDS – Drain-to-Source Voltage (V)
C – Capacitance (pF)
VGS
Crss
Coss
Ciss
VDS = 6 V
ID = 2.8 A
– On-Resistance (rDS(on) )
ID – Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 2.8 A
TJ – Junction Temperature (C)
(Normalized)
– On-Resistance (rDS(on) )
VGS = 2.5 V
VGS = 4.5 V
25C
BM2301
0.01 0.10 1.00 10.00
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Power (W)
–0.2
–0.1
0.0
0.1
0.2
0.3
0.4
–50 0 50 100 150
0
0.1
0.2
0.3
0.4
0.5
0.6
02468
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square W ave Pulse Duration (sec)
2
1
0.1
0.01
10–4 10–3 10–2 10–1 1
Normalized Effective T ransient
Thermal Impedance
30
– On-Resistance (rDS(on) W)
VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
– Source Current (A)I S
TJ – Temperature (C) Time (sec)
Variance (V)VGS(th)
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
ID = 2.8 A
ID = 250 mA
10
1
10
TC = 25C
Single Pulse
14
12
8
4
0
TJ = 25C
TJ = 150C
2
6
10
