© Semiconductor Components Industries, LLC, 2011
August, 2011 Rev. 5
1Publication Order Number:
NTF2955/D
NTF2955, NVF2955,
NVF2955P
Power MOSFET
60 V, 2.6 A, Single PChannel SOT223
Features
TMOS7 Design for low RDS(on)
Withstands High Energy in Avalanche and Commutation Modes
AEC Q101 Qualified NVF2955, NVF2955P
These Devices are PbFree and are RoHS Compliant
Applications
Power Supplies
PWM Motor Control
Converters
Power Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
DraintoSource Voltage VDSS 60 V
GatetoSource Voltage VGS ±20 V
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°CID2.6 A
TA = 85°C2.0
Power Dissipation
(Note 1)
Steady
State
TA = 25°C PD2.3 W
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°CID1.7 A
TA = 85°C1.3
Power Dissipation
(Note 2)
TA = 25°C PD1.0 W
Pulsed Drain Current tp = 10 msIDM 17 A
Operating Junction and Storage Temperature TJ,
TSTG
55 to
175
°C
Single Pulse DraintoSource Avalanche
Energy (VDD = 25 V, VG = 10 V, IPK = 6.7 A,
L = 10 mH, RG = 25 W)
EAS 225 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
TL260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
JunctiontoTab (Drain) Steady State (Note 2) RqJC 14
°C/W
JunctiontoAmbient Steady State (Note 1) RqJA 65
JunctiontoAmbient Steady State (Note 2) RqJA 150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 in. pad size (Cu. area = 1.127
in2 [1 oz] including traces)
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu. area = 0.341 in2)
http://onsemi.com
D
S
G
PChannel
60 V 145 mW @ 10 V
RDS(on) TYP
2.6 A
ID MAXV(BR)DSS
123
4
SOT223
CASE 318E
STYLE 3
MARKING DIAGRAMS AND
PIN ASSIGNMENT
3
Source
2
Drain
1
Gate
4 Drain
Device Package Shipping
ORDERING INFORMATION
NTF2955T1G SOT223
(PbFree)
1000 /Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
AYW
2955G
G
A = Assembly Location
Y = Year
W = Work Week
G= PbFree Package
(Note: Microdot may be in either location)
3
Source
2
Drain
1
Gate
4 Drain
AYW
2955PG
G
NVF2955T1G SOT223
(PbFree)
1000/ Tape & Reel
NVF2955PT1G SOT223
(PbFree)
1000/ Tape & Reel
NTF2955, NVF2955, NVF2955P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA60 V
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ66.4 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 60 V
TJ = 25°C1.0 mA
TJ = 125°C50
GatetoSource Leakage Current IGSS VDS = 0 V, VGS = ±20 V±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1.0 mA 2.0 4.0 V
DraintoSource On Resistance RDS(on) VGS = 10 V, ID = 0.75 A 145 170 mW
VGS = 10 V, ID = 1.5 A 150 180
VGS = 10 V, ID = 2.4 A 154 185
Forward Transconductance gFS VGS = 15 V, ID = 0.75 A 1.77 S
CHARGES AND CAPACITANCES
Input Capacitance CISS VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
492 pF
Output Capacitance COSS 165
Reverse Transfer Capacitance CRSS 50
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 30 V,
ID = 1.5 A
14.3 nC
Threshold Gate Charge QG(TH) 1.2
GatetoSource Charge QGS 2.3
GatetoDrain Charge QGD 5.2
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time td(ON) VGS = 10 V, VDD = 25 V,
ID = 1.5 A, RG = 9.1 W
RL = 25 W
11 ns
Rise Time tr7.6
TurnOff Delay Time td(OFF) 65
Fall Time tf38
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 1.5 A
TJ = 25°C1.10 1.30 V
TJ = 125°C0.9
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 1.5 A
36
ns
Charge Time ta20
Discharge Time tb16
Reverse Recovery Charge QRR 0.139 nC
3. Pulse Test: pulse width 300ms, duty cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTF2955, NVF2955, NVF2955P
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3
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
0
10
2
4
6
8
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation with
Temperature
Figure 6. DraintoSource Leakage Current
versus Voltage
VGS, GATETOSOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
TJ = 25°C
TJ = 125°C
TJ = 55°C
0
0.4
0.3
0.2
0106
ID, DRAIN CURRENT (AMPS)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
ID, DRAIN CURRENT (AMPS)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
VGS = 15 V
1.8
1.6
1.4
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED)
50 5025025 75 125100
ID = 1.5 A
VGS = 10 V
0.8
0150
10
1000
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
IDSS, LEAKAGE (nA)
54060302010 50
100
82
0
2
1021
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
0
10
VGS = 10 V
VGS = 3.8 V
VGS = 4.5 V
VGS = 5 V
6
210846
0.1
1.2
4
0
0.25
0.2
0.175
0.15
0.125
0.05 1086
0.1
0.075
2
1
VGS = 10 V to 7 V
TJ = 150°C
TJ = 25°C
TJ = 25°C
TJ = 125°C
TJ = 55°C
VDS 10 V
VGS = 0 V
8
3
44
TJ = 125°C
0.225
2
VGS = 6 V
VGS = 10 V
0.2
0.4
0.6
45352515 55
456789
VGS = 5.5 V
TJ = 25 °C
NTF2955, NVF2955, NVF2955P
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10 10 155020525
RDS(on) LIMIT
VGS
100
1
0.01
1000
10
1
12
4
2
0
100
50
0
5
0
1000
800
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
600
400
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. GatetoSource and
DraintoSource Voltage versus Total Charge
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
RG, GATE RESISTANCE (W)
Figure 10. Diode Forward Voltage versus Current
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (°C)
ID, DRAIN CURRENT (AMPS)
EAS, SINGLE PULSE DRAINTOSOURCE
AVALANCHE ENERGY (mJ)
0108416
1 10 100 0 0.50.25
0.1 10 1001 25 125 15010075 17550
ID = 1.5 A
TJ = 25°C
VGS
VGS = 0 V
VDS = 0 V TJ = 25°C
Crss
Ciss
Coss
Crss
1
0.75 1
Ciss
VGS = 20 V
SINGLE PULSE
TC = 25°C
VDD = 25 V
ID = 1.5 A
VGS = 10 V
VGS = 0 V
TJ = 25°C
IPK = 6.7 A
1 ms
100 ms
10 ms
dc
tr
td(off)
td(on)
VDS
1.75
150
200
250
QGD
QT
0
62
tf
THERMAL LIMIT
PACKAGE LIMIT
200
1200
6
10
8
10
2
1.25 1.5
100
3
4
10 ms
1412
60
20
10
0
30
40
50
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
QGS
VDS
0.1
NTF2955, NVF2955, NVF2955P
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5
PACKAGE DIMENSIONS
SOT223 (TO261)
CASE 318E04
ISSUE N
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
1.5
0.059 ǒmm
inchesǓ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c0.24 0.29 0.35 0.009
D6.30 6.50 6.70 0.249
E3.30 3.50 3.70 0.130
e2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264
0.069 0.078
0.276 0.287
HE
e1
0°10°0°10°
q
q
L
L0.20 −−− −−− 0.008 −−− −−−
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NTF2955/D
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