BC327 / BC328 VISHAY Vishay Semiconductors Small Signal Transistors (PNP) Features * PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. * These types are also available subdivided into three groups, -16, -25, and -40, according to their DC current gain. As complementary types, the NPN transistors BC337 and BC338 are recommended. C 1 2 B 18979 1 2 3 E 3 Mechanical Data Case: TO-92 Plastic Package Weight: approx. 177 mg Packaging Codes/Options: BULK / 5 k per container 20 k/box TAP / 4 k per Ammopack 20 k/box Parts Table Part Type differentiation Ordering code Remarks BC327-16 hFE, typ. 160 @ 100 mA BC327-16-BULK or BC327-16-TAP Bulk / Ammopack BC327-25 hFE, typ. 250 @ 100 mA BC327-25-BULK or BC327-25-TAP Bulk / Ammopack BC327-40 hFE, typ. 400 @ 100 mA BC327-40-BULK or BC327-40-TAP Bulk / Ammopack BC328-16 hFE, typ. 130 @ 300 mA BC328-16-BULK or BC328-16-TAP Bulk / Ammopack BC328-25 hFE, typ. 200 @ 300 mA BC328-25-BULK or BC328-25-TAP Bulk / Ammopack BC328-40 hFE, typ. 320 @ 300 mA BC328-40-BULK or BC328-40-TAP Bulk / Ammopack Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Collector - emitter voltage Emitter - base voltage Collector current Peak collector current Base current Power dissipation 1) Tamb = 25 C Part Symbol Value Unit BC327 - V CES 50 V BC328 - V CES 30 V BC327 - V CEO 45 V BC328 - V CEO 25 V - VEBO 5 V - IC 800 mA - ICM 1 A - IB 100 mA Ptot 6251) mW Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. Document Number 85132 Rev. 1.4, 19-May-04 www.vishay.com 1 BC327 / BC328 VISHAY Vishay Semiconductors Maximum Thermal Resistance Parameter Test condition Symbol Thermal resistance junction to ambient air Value RJA 200 Unit C/W 1) Junction temperature Tj 150 C Storage temperature range TS - 65 to + 150 C 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. Electrical DC Characteristics Part Symbol Min Typ Max Unit DC current gain (current gain grup - 16) Parameter - VCE = 1 V, - IC = 100 mA Test condition BC327-16 hFE 100 160 250 V DC current gain (current gain grup - 25) - VCE = 1 V, - IC = 100 mA BC327-25 hFE 160 250 400 V DC current gain (current gain grup - 40) - VCE = 1 V, - IC = 100 mA BC327-40 hFE 250 400 630 V DC current gain (current gain grup - 16) - VCE = 1 V, - IC = 300 mA BC328-16 hFE 60 130 V DC current gain (current gain grup - 25) - VCE = 1 V, - IC = 300 mA BC328-25 hFE 100 200 V DC current gain (current gain grup - 40) - VCE = 1 V, - IC = 300 mA BC328-40 hFE 170 320 V Collector - emitter cutoff current - VCE = 45 V BC327 - ICES 2 100 - VCE = 25 V BC328 - ICES 2 100 nA - VCE = 45 V, Tamb = 125 C BC327 - ICES 10 A - VCE = 25 V, Tamb = 125 C BC328 nA - ICES 10 A Collector saturation voltage - IC = 500 mA, - IB = 50 mA - VCEsat 0.7 V Base - emitter voltage - VCE = 1 V, - IC = 300 mA - VBE 1.2 V Collector - emitter breakdown voltage - IC = 10 mA - IC = 0.1 mA Emitter - base breakdown voltage BC327 - V(BR)CEO 45 V BC328 - V(BR)CEO 25 V BC327 - V(BR)CEO 50 V BC328 - V(BR)CES 30 V - V(BR)EBO 5 V - IE = 0.1 mA Electrical AC Characteristics Parameter Test condition Gain - bandwidth product - VCE = 5 V, - IC = 10 mA, f = 50 MHz Collector - base capacitance - VCB = 10 V, f = 1 MHz www.vishay.com 2 Symbol Min Typ Max Unit fT 100 MHz CCBO 12 pF Document Number 85132 Rev. 1.4, 19-May-04 BC327 / BC328 VISHAY Vishay Semiconductors Ptot - Admissible Power Dissipation ( W ) 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160180 200 Tamb - Ambient Temperature ( C ) 18845 18847 maximum 1000 typical 100 1 0 Tamb - Ambient Temperature ( C ) 18878 Fig. 4 Collector-Emitter Cutoff Current vs. Ambient Temperature h FE - DC Current Gain 0.5 0.2 0.1 10 0.05 0.02 0.01 0.005 1 = 0 tp = tp /T 1000 typical limits at Tamb = 25 C 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -VBE - Base-Emitter Voltage ( V ) Fig. 3 Collector Current vs. Base-Emitter Voltage Document Number 85132 Rev. 1.4, 19-May-04 Tamb = 25 C 10 10 10 2 150 C 18877 - 50 C 100 PI 25 C -50 C 10 150 C T 10 -1 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 t p - Pulse Length ( s ) 0.1 20 40 60 80 100 120 140 160 180 200 1000 10 2 100 BC 327: -VCE = 45 V BC 328: -VCE = 25 V 10 10 3 Fig. 2 Pulse Thermal Resistance vs. Pulse Duration -IC - Collector Current ( mA ) 10000 -V CE = 1 V 0.1 18885 1 10 100 I C - Collector Current ( mA ) 1000 Fig. 5 DC Current Gain vs. Collector Current 500 -I C - Collector Current ( mA ) r thA - Pulse Thermal Resistance ( C / W) Fig. 1 Admissible Power Dissipation vs. Ambient Temperature -I CES - Collector-Emitter Cutoff Current ( nA ) Typical Characteristics (Tamb = 25 C unless otherwise specified) 3.2 2.8 400 1.8 1.6 1.4 1.2 1 0.8 300 200 0.6 0.4 100 0 18879 2.4 2 -I B = 0.2 mA 0 0.4 0.8 1.2 1.6 2 -VCE - Collector Emitter Voltage ( V ) Fig. 6 Common Emitter Collector Characteristics www.vishay.com 3 BC327 / BC328 VISHAY Vishay Semiconductors 0.85 400 300 0.8 200 0.75 100 -VBE = 0.7 V 0 0 0.4 0.8 1.2 1.6 -IC - Collector Current ( mA ) 0.35 80 0.3 0.15 0.1 20 0 -I B = 0.05 mA 0 2 4 6 8 10 12 14 16 18 20 -VCE - Collector Emitter Voltage ( V ) 18881 -VCEsat - Collector Saturation Voltage ( V ) Fig. 8 Common Emitter Collector Characteristics 0.5 0.4 0.3 -I C -I B = 10 - 50 C 25 C 150 C 0 0.1 1000 0.2 40 typical limits at Tamb = 25 C 1 10 100 -I C - Collector Current ( mA ) 1000 Fig. 10 Base Saturation Voltage vs. Collector Current 0.25 60 1 18883 Fig. 7 Common Emitter Collector Characteristics 100 -I C -I B 2 -VCE - Collector Emitter Voltage ( V ) 18880 2 -VBEsat - Base Saturation Voltage ( V ) 0.9 f T - Gain-Bandwidth Product ( MHz ) -I C - Collector Current ( mA ) 500 Tamb = 25 f = 20 MHz -VCE = 5 V 1V 100 10 1 18884 10 100 -I C - Collector Current ( mA ) 1000 Fig. 11 Gain-Bandwidth Product vs. Collector Current typical limits at Tamb = 25 C = 10 0.2 0.1 0 0.1 18882 150 C 25 C - 50 C 1 10 100 -I C - Collector Current ( mA ) 1000 Fig. 9 Collector Saturation Voltage vs. Collector Current www.vishay.com 4 Document Number 85132 Rev. 1.4, 19-May-04 BC327 / BC328 VISHAY Vishay Semiconductors Packaging for Radial Taping 2 12.7 1 "H" 0.5 9 12 0.3 18 1 -0.5 0.3 0.2 1 Vers. Dim. "H" FSZ 5.08 0.7 4 0.2 2.54 27 0.5 0.9 max + 0.6 - 0.1 6.3 0.7 12.7 0.2 Measure limit over 20 index - holes: 1 18787 Document Number 85132 Rev. 1.4, 19-May-04 www.vishay.com 5 BC327 / BC328 VISHAY Vishay Semiconductors Package Dimensions in mm (Inches) 3.6 (0.142) min. 12.5 (0.492) 4.6 (0.181) 4.6 (0.181) max. 0.55 (0.022) 2.5 (0.098) Bottom View www.vishay.com 6 18776 Document Number 85132 Rev. 1.4, 19-May-04 BC327 / BC328 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85132 Rev. 1.4, 19-May-04 www.vishay.com 7