PNP SILICON POWER TRANSISTOR 2SA1142 i NEC ELECTRON DEVICE DESCRIPTION The 2541142 w designed for use in Auedig irequincy power arriglifier. PACKAGE DIMENSIONS in millimeter finches! FEATURES #Hi ae gh voltage. Veeg > 180 V (a Mae 2.8 MAR # Low C,,, High {+ = 4322 ehen 176i See fy = 180 MHz, C,,, = 4-5 pF ey = * Complementary to the NEG 25C27687 NPN Transistor. m4 he Hi 3 a =| ABSOLUTE MAXIMUM RATINGS Maximum Ternperatures 12 Storage Temperature... teeeeaa =85t04750"%o. | (0047) Junction Temperature . . es 150 "C Maximum Maximum Power Dissipations Total Power Dissipation (Tg= 25 Cy ....,.... 1.2 eT Total Power Dissipation (Te= 25C} ......0.0. TOW | josie) Maximum Voltages and Current (Ty = 25 "C) a 2a rr Veuo Callector toe Base Voltage 2... . 180 (0.08) 10.090) Veen Collector to Emitter Voltage. .... 18O Vv Vesa Emitter to Base Voltage ........ 5.0 V {oom} le Collector Gurrent a ite ~1 100 mA 1. Emini @. Colecter connected to mounting pene | 1 Base ELECTRICAL CHARACTERISTICS (7, = 25 C) | SYMBOL CHAAR ACTERISTIC Pel TYP A LENT TEST CONDITIONS i heey DC Gunners Gain 50 200 Vite Sm 5 o 7 Ic =o = | 0 mae Kreg GC Cuneny Gain 1th 700 aa} Vee. -80, le = -1oma* fy Gan Boraed}h Produce Bo My Viog = -10, i = 20 mA Cob Cuiput Capectancs 45 Fo aF Vop* 10V tp = Of = OMA NF Noise Fiqure ao oh ie sateice =F ee rh lem Goltector Cute Current 1.0 wet Veg" - 180, ip= 8 leac Emitter Cuno?! Gunmen 1o ei Vea" 2.0. le=0 CE faarl Cooshec hoe Saturation: VW cltage =0 16 O.5 + lc = 50 mA, lm 5 0 ria" RE Lea | Bite Saturation Weltege O.8 1.6 ic = 50 mA, |g = O mat "Pulse Tose > Pay <. 350 ws, Dury Cycles 2 we Classification af hres Alnk 0 P Flange 100 in 200 | 100 to 330 Test Condiion : Vee 5.0 , Ip 1 ma