BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
1
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●Designed for Complementary Use with
BDX54, BDX54A, BDX54B and BDX54C
●60 W at 25°C Case Temperature
●8 A Continuous Collector Current
●Minimum hFE of 750 at 3 V, 3 A
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
BDX53
BDX53A
BDX53B
BDX53C
VCBO
45
60
80
100
V
Collector-emitter voltage (IB = 0)
BDX53
BDX53A
BDX53B
BDX53C
VCEO
45
60
80
100
V
Emitter-base voltage VEBO 5V
Continuous collector current IC8A
Continuous base current IB0.2 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 60 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2W
Operating junction temperature range Tj-65 to +150 °C
Operating temperature range Tstg -65 to +150 °C
Operating free-air temperature range TA-65 to +150 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
2
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage IC = 100 mA IB = 0 (see Note 3)
BDX53
BDX53A
BDX53B
BDX53C
45
60
80
100
V
ICEO
Collector-emitter
cut-off current
VCE = 30 V
VCE = 30 V
VCE = 40 V
VCE = 50 V
IB=0
IB=0
IB=0
IB=0
BDX53
BDX53A
BDX53B
BDX53C
0.5
0.5
0.5
0.5
mA
ICBO
Collector cut-off
current
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
IE=0
IE=0
IE=0
IE=0
BDX53
BDX53A
BDX53B
BDX53C
0.2
0.2
0.2
0.2
mA
IEBO
Emitter cut-off
current VEB = 5 V IC=0 2 mA
hFE
Forward current
transfer ratio VCE = 3 V IC= 3 A (see Notes 3 and 4) 750
VBE(sat)
Base-emitter
saturation voltage IB = 12 mA IC= 3 A (see Notes 3 and 4) 2.5 V
VCE(sat)
Collector-emitter
saturation voltage IB = 12 mA IC= 3 A (see Notes 3 and 4) 2 V
VEC
Parallel diode
forward voltage IE = 3 A IB = 0 2.5 V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 2.08 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS †MIN TYP MAX UNIT
ton Tu r n -o n t i m e I C = 3 A
VBE(off) = -4.5 V
IB(on) = 12 mA
RL = 10 Ω
IB(off) = -12 mA
tp = 20 µs, dc ≤ 2%
1µs
toff Turn-off time 5µs
BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
3
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 1·0 10
hFE - Typical DC Current Gain
40000
100
1000
10000
TCS120AG
TC = -40°C
TC = 25°C
TC = 100°C
VCE = 3 V
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 1·0 10
VCE(sat) - Collector-Emitter Saturation Voltage - V
0
0·5
1·0
1·5
2·0
2·5
3·0 TCS120AH
TC = -40°C
TC = 25°C
TC = 100°C
tp = 300 µs, duty cycle < 2%
IB = IC / 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 1·0 10
VBE(sat) - Base-Emitter Saturation Voltage - V
0·5
1·0
1·5
2·0
2·5
3·0 TCS120AI
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
4
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
1·0 10 100 1000
IC - Collector Current - A
0·1
1·0
10
100 SAS120AD
DC Operation
tp = 300 µs,
d = 0.1 = 10%
BDX53
BDX53A
BDX53B
BDX53C
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
0 255075100125150
Ptot - Maximum Power Dissipation - W
0
10
20
30
40
50
60
70
80 TIS120AB