BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BDX54, BDX54A, BDX54B and BDX54C 60 W at 25C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0) BDX53B Collector-emitter voltage (IB = 0) V CBO 60 80 BDX53C 100 BDX53 45 BDX53A BDX53B UNIT 45 BDX53 BDX53A VALUE VCEO 60 80 V V 100 BDX53C VEBO 5 Continuous collector current IC 8 A Continuous base current IB 0.2 A Continuous device dissipation at (or below) 25C case temperature (see Note 1) Ptot 60 W Continuous device dissipation at (or below) 25C free air temperature (see Note 2) Ptot 2 W Tj -65 to +150 C Tstg -65 to +150 C TA -65 to +150 C Emitter-base voltage Operating junction temperature range Operating temperature range Operating free-air temperature range V NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.48 W/C. 2. Derate linearly to 150C free air temperature at the rate of 16 mW/C. MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VBE(sat) VCE(sat) VEC Collector-emitter TEST CONDITIONS MIN 45 BDX53A 60 BDX53B 80 BDX53C 100 TYP MAX IC = 100 mA IB = 0 VCE = 30 V IB = 0 BDX53 0.5 Collector-emitter VCE = 30 V IB = 0 BDX53A 0.5 cut-off current VCE = 40 V IB = 0 BDX53B 0.5 breakdown voltage (see Note 3) BDX53 V VCE = 50 V IB = 0 BDX53C 0.5 VCB = 45 V IE = 0 BDX53 0.2 Collector cut-off VCB = 60 V IE = 0 BDX53A 0.2 current VCB = 80 V IE = 0 BDX53B 0.2 VCB = 100 V IE = 0 BDX53C 0.2 VEB = 5V IC = 0 VCE = 3V IC = 3 A (see Notes 3 and 4) IB = 12 mA IC = 3 A IB = 12 mA IC = 3 A Emitter cut-off current Forward current transfer ratio Base-emitter saturation voltage Collector-emitter saturation voltage Parallel diode forward voltage IE = 3A UNIT mA mA 2 mA (see Notes 3 and 4) 2.5 V (see Notes 3 and 4) 2 V 2.5 V 750 IB = 0 NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RJC Junction to case thermal resistance PARAMETER MIN TYP 2.08 C/W RJA Junction to free air thermal resistance 62.5 C/W MAX UNIT resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN ton Turn-on time IC = 3 A IB(on) = 12 mA IB(off) = -12 mA 1 s toff Turn-off time VBE(off) = -4.5 V RL = 10 tp = 20 s, dc 2% 5 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS120AG 40000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40C TC = 25C TC = 100C 10000 1000 VCE = 3 V tp = 300 s, duty cycle < 2% 100 0*5 1*0 10 TCS120AH 3*0 tp = 300 s, duty cycle < 2% IB = I C / 100 2*5 2*0 1*5 1*0 TC = -40C TC = 25C TC = 100C 0*5 0 0*5 IC - Collector Current - A 1*0 10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS120AI VBE(sat) - Base-Emitter Saturation Voltage - V 3*0 2*5 TC = -40C TC = 25C TC = 100C 2*0 1*5 1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% 0*5 0*5 1*0 10 IC - Collector Current - A Figure 3. MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAS120AD IC - Collector Current - A DC Operation tp = 300 s, d = 0.1 = 10% 10 1*0 BDX53 BDX53A BDX53B BDX53C 0*1 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS120AB Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.