• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
1
HMIC™ Silicon SP5T PIN Diode Switch
RoHS Compliant
Rev. V4
MA4SW510
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
♦ Ultra Broad Bandwidth: 50MHz to 26GHz
♦ 1dB Insertion Loss ,
♦ 30dB Isolation at 20GHz
♦ 50nS Switching Speed
♦ Fully Monolithic, Glass Encapsulated Chip with Polymer
Protective Coating
Description
The MA4SW510 is a SP5T series-shunt broad band switch
made with M/A-COM’s unique HMICT M
(Heterolithic Microwave Integrated Circuit) process, US
Patent 5,268,310. This process allows the incorporation of
silicon pedestals that form series and shunt diodes or vias
by imbedding them in a low loss, low dispersion glass. This
hybrid combination of silicon and glass gives HMIC
switches exceptional low loss and remarkable high isolation
through low millimeter-wave frequencies.
Applications
These high performance switches are suitable for the use in
multi-band ECM, Radar, and instrumentation control circuits
where high isolation to insertion loss ratios are required.
With a standard +5V/-5V, TTL controlled PIN diode driver,
50ns switching speeds are achieved.
Absolute Maximum Ratings
TAMB = +25°C (Unless otherwise specified)
Notes:
1. Exceeding any one of these values may result in permanent
damage to the chip.
2. Maximum operating conditions for combination of RF power,
D.C. bias and temperature:
+30dBm C.W. @ 15mA/diode @ +85°C
PARAMETER VALUE
Operating Temperature -65°C to +125°C
Storage Temperature -65°C to +150°C
RF C.W. Incident Power +30dBm
Forward Bias Current ± 20mA
Reverse Applied Voltage -25 Volts
Yellow areas indicate 2.5µM thick gold bond pads
J4
J3 J5
J6 J1
J2
MA4SW510 Schematic
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
2
HMIC™ Silicon SP5T PIN Diode Switch
RoHS Compliant
Rev. V4
MA4SW510
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Control Level ( DC Current ) at Port
Condition
of
RF Output
J2 J3 J4 J5 J6 J2 - J1 J3 - J1 J4 - J1 J5 - J1 J6 - J1
-20 mA +20 mA +20 mA +20 mA +20 mA Low Loss Isolation Isolation Isolation Isolation
+20 mA -20 mA +20 mA +20 mA +20 mA Isolation Low Loss Isolation Isolation Isolation
+20 mA +20 mA -20 mA +20 mA +20 mA Isolation Isolation Low Loss Isolation Isolation
+20 mA +20 mA +20 mA -20 mA +20 mA Isolation Isolation Isolation
Low Loss Isolation
+20 mA +20 mA +20 mA +20 mA -20 mA Isolation Isolation Isolation Isolation
Low Loss
Typical Driver Connections
Condition
of
RF Output
Condition
of
RF Output
Condition
of
RF Output
Condition
of
RF Output
Note:
1.) Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL
compatible driver. Driver output parallel RC network uses a capacitor between 390pF - 560pF and a
resistor between 150Ω - 220Ω to achieve 50ns rise and fall times.
RF Electrical Specifications @ TAMB = 25°C, ± 20mA bias current (probed on-wafer measurements)
Parameter Frequency Minimum Nominal Maximum Units
Insertion Loss 20 GHz 0.9 1.4 dB
Isolation 20 GHz 28 38
dB
Input Return Loss 20 GHz 22 dB
Output Return Loss 20 GHz 23 dB
Switching Speed1 10 GHz 1 50 nS
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
3
HMIC™ Silicon SP5T PIN Diode Switch
RoHS Compliant
Rev. V4
MA4SW510
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Typical Microwave Performance
INSERTION LOSS
-1.000
-0.800
-0.600
-0.400
-0.200
0.000
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0
Frequency (GHz)
Loss (dB)
J2 J3 J4 J5 J6
ISOLATION
-80
-70
-60
-50
-40
-30
-20
-10
0
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0
Frequency (GHz)
Isolation (dB)
J2 J3 J4 J5 J6
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
4
HMIC™ Silicon SP5T PIN Diode Switch
RoHS Compliant
Rev. V4
MA4SW510
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Typical Microwave Performance
OUTPUT RETURN LOSS
-40
-35
-30
-25
-20
-15
-10
-5
0
0 2 4 6 8 101214161820
Frequency (GHz)
Loss (dB)
J2 J3 J4 J5 J6
INPUT RETURN LOSS
-40.
-35.
-30
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
Loss
(dB)
J2 J3 J4 J5 J6
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
5
HMIC™ Silicon SP5T PIN Diode Switch
RoHS Compliant
Rev. V4
MA4SW510
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Operation of the MA4SW510 Switch
The simultaneous application of negative DC current to the low loss port and positive DC current to the
remaining Isolated ports as shown in Fig.1 achieves operation of the MA4SW510 diode switch. The
backside area of the die is the RF and DC return ground plane. The DC return is achieved on common
Port J1. Constant current sources should supply the DC control currents. The voltages at these points will
not exceed ±1.5 volts (1.2 volts typical) for supply currents up to ± 20 mA. In the low loss state, the series
diode must be forward biased and the shunt diode reverse biased. For all the isolated ports, the shunt
diode is forward biased and the series diode is reverse biased. The bias network design should yield
>30 dB RF to DC isolation. Best insertion loss, P1dB, IP3, and switching speed are achieved by using
a voltage pull-up resistor in the DC return path, (J1). A minimum value of -2V is recommended at this
return node, which is achievable with a standard , 65V TTL controlled PIN diode driver. A typical DC
bias schematic for 2-18 GHz operation is shown in Fig.1.
2 – 18 GHz Bias Network Schematic
MA4SW510 Die
100 Ω
39 pF
22 nH
22 pF
39 pF
DC Bias
J1
22 nH
22 pF J2
J3 J5
J6
J4
Fig. 1
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
6
HMIC™ Silicon SP5T PIN Diode Switch
RoHS Compliant
Rev. V4
MA4SW510
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
ASSEMBLY AND HANDLING INSTRUCTIONS
Cleanliness
These chips should be handled in a clean environment free of organic contamination.
Electro-Static Sensitivity
The MA4SW510 PIN switch is ESD, Class 1A sensitive (HBM). The proper ESD handling procedures
must be used.
Wire Bonding
Thermosonic wedge bonding using 0.003” x 0.00025” ribbon or 0.001” diameter gold wire is recommended.
A heat stage temperature of 150oC and a force of 18 to 22 grams should be used. If ultrasonic energy is
necessary, it should be adjusted to the minimum level required to achieve a good bond. RF bond wires
should be kept as short as possible.
Chip Mounting
The HMIC switches have Ti-Pt-Au back metal. They can be die mounted with a gold-tin eutectic solder
preform or conductive epoxy. Mounting surface must be clean and flat.
Eutectic Die Attachment: An 80/20, gold-tin, eutectic solder preform is recommended with a work surface
temperature of 255oC and a tool tip temperature of 265oC. When hot gas is applied, the temperature at the
chip should be 290oC. The chip should not be exposed to temperatures greater than 320oC for more than
20 seconds. No more than three seconds should be required for attachment. Solders rich in tin should not
be used.
Epoxy Die Attachment: A minimum amount of epoxy, 1-2 mils thick, should be used to attach chip. A thin
epoxy fillet should be visible around the outer perimeter of the chip after placement. Cure epoxy per product
instructions. Typically 150°C for 1 hour.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
7
HMIC™ Silicon SP5T PIN Diode Switch
RoHS Compliant
Rev. V4
MA4SW510
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
MA4SW510 Chip Dimensions
Chip Dimensions*
DIM INCHES μM
A 0.0680 1723
B 0.0340 858
C 0.0580 1473
D 0.0370 938
E 0.0295 750
F 0.0295 750
G 0.0325 825
All Pads .005 X .005 120 X 120
Thickness 0.005 127
*All chip dimension tolerances are ±.0005”
Notes:
1. Topside and backside metallization is gold , 2.5µm thick typical.
2. Yellow areas indicate bonding pads
