2N3904 2N3904 Si-Epitaxial-Planar Switching Transistors Si-Epitaxial-Planar Schalttransistoren NPN NPN Version 2010-02-09 Power dissipation Verlustleistung 18 9 16 C BE 2 x 2.54 Dimensions - Mae [mm] 625 mW Plastic case Kunststoffgehause TO-92 (10D3) Weight approx. - Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) 2N3904 Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCEO 40 V Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 60 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 6V Power dissipation - Verlustleistung Ptot 625 mW 1) Collector current - Kollektorstrom (dc) IC 200 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. hFE hFE hFE hFE hFE 4070 100 60 30 - - - - - - - 300 - - Small signal current gain - Kleinsignal-Stromverstarkung hfe 100 - 400 Input impedance - Eingangs-Impedanz hie 1 k - 10 k Output admittance - Ausgangs-Leitwert hoe 1 S - 40 S Reverse voltage transfer ratio - Spannungsruckwirkung hre 0.5*10 - 8*10-4 DC current gain - Kollektor-Basis-Stromverhaltnis 2) IC IC IC IC IC = = = = = 0.1 mA, 1 mA, 10 mA, 50 mA, 100 mA, VCE VCE VCE VCE VCE = = = = = 1 1 1 1 1 V V V V V h-Parameters at/bei VCE = 10 V, - IC = 1 mA, f = 1 kHz 1 2 -4 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 2N3904 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. VCEsat VCEsat - - - - 0.2 V 0.3 V VBEsat VBEsat 0.65 V - - - 0.65 V 0.95 V ICBX - - 50 nA IEBV - -- 50 nA fT 300 MHz - - CCBO - - 4 pF CEBO - - 8 pf F - - 5 dB VCC = 3 V, VBE = 0.5 V IC = 10 mA, IB1 = 1mA td - - 35 ns tr - - 35 ns VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA ts - - 200 ns tf - - 50 ns Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung 2) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom VCE = 30 V, VEB = 3 V Emitter-Base cutoff current - Emitter-Basis-Reststrom - VCE = 30 V, - VEB = 3 V Gain-Bandwidth Product - Transitfrequenz IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 5 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl VCE = 5 V, IC = 1 A, RG = 1 k, f = 1 kHz Switching times - Schaltzeiten (between 10% and 90% levels) delay time rise time storage time fall time Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren 2 1 2 RthA < 200 K/W 1) 2N3906 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG