UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R208-012,A
SILICON PNP EPITAXAL TYPE
DESCRIPTION
*Strobo Flash Applications.
*Medium Power Amplifier Applications.
FEATURES
*High DC Current Gain and Excellent hFE Linearity.
*hFE(1)=140-600, (VCE= -1V,IC= -0.5A)
*hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)
*Low Saturation Voltage
*VCE (sat)= -0.5V(Max.), (IC= -2A,IE= -50mA)
SOT-89
1
1: Emitter 2: Collector 3:Base
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER SYMBOL RATIOS UNIT
Collector-Base Voltage VCBO -20 V
VCES -20
Collector-Emitter Voltage VCEO -10 V
Emitter-Base Voltage VEBO -6 V
DC Ic -2
Collector Current Pulsed (Note) lcP -5
A
Base Current IB -2 A
Collector Power Dissipation Pc 750 mW
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg -55~150 °C
Note :Pulse Width= 10ms(Max.),Duty Cycle=30%(Max.)
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-emitter breakdown voltage V(BR)CEO I
C=10mA, IB=0 -10 - - V
Emitter-collector breakdown voltage V(BR)EBO I
E= -1mA, IC=0 -6 - - V
Collector cut-off current ICBO V
CE = -20V, IE =0 - - -100 nA
Emitter cut-off current IEBO V
BE = -6V, IC =0 - - -100 nA
hFE1 V
CE= -1V, Ic=0.5A 140 - 600 DC current Gain
hFE2 V
CE= -1V, Ic= -4A 60 120 -
Collector-emitter saturation voltage VCE(sat) Ic= -2A, IB= -50mA - -0.2 -0.5 V
Base-emitter voltage VBE V
CE= -1V, Ic= -2A - -0.83 -1.5 V
Current gain bandwidth product fT V
CE= -1V,Ic= -0.5A - 140 - MHz
Output capacitance Cob VCE= -10V, IE=0, f=1MHz - 50 - pF
CLASSIFICATIONS OF hFE1
RANK Y GR BL