© 2010 IXYS All rights reserved 1 - 8
20101111d
MIEB100W1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
Six-Pack
SPT+ IGBT
VCES = 1200 V
IC25 = 183 A
VCE(sat) = 1.8 V
Pin configuration see outlines.
Features:
• SPT+ IGBT technology
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient
for easy parallelling
• MOS input, voltage controlled
• SONIC™ free wheeling diode
- fast and soft revere recovery
- low operation forward voltage
• solderable pins for PCB mounting
• package with copper base plate
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
Package:
• "E3-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Temperature sense included
Part name (Marking on product)
MIEB100W1200TEH
9
10
11
12
5
6
7
8
1
2
3
4
NTC
19
20
16, 17, 18
13, 14, 15
27
28
29
24
25
26
21
22
23
30, 31, 32
33, 34, 35
D1 D5
D2 D4 D6
D3
T1 T5
T2 T4 T6
T3
E72873
© 2010 IXYS All rights reserved 2 - 8
20101111d
MIEB100W1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
Output Inverter D1 - D6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitve reverse voltage TVJ = 25°C 1200 V
IF25
IF80
forward current TC = 25°C
TC = 80°C
135
90
A
A
VFforward voltage
(on chip level)
IF = 100 A; VGE = 0 V TVJ = 25°C
TVJ = 125°C
2.00
1.95
2.20
2.25
V
V
Irr
trr
Qrr
Erec
max. reverse recovery current
reverse recovery time
inductive load
VCE = 600 V; IC = 100 A
VGE = ±15 V; RG = 10 W TVJ = 125°C
LS = 70 nH
120
330
12.5
4.2
A
ns
µC
mJ
RthJC thermal resistance junction to case (per diode) 0.4 K/W
Ouput Inverter T1 - T6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VCES collector emitter voltage TVJ = 25°C 1200 V
VGES
VGEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
IC25
IC80
collector current TC = 25°C
TC = 80°C
183
128
A
A
Ptot total power dissipation TC = 25°C 630 W
VCE(sat) collector emitter saturation voltage
(on chip level)
IC = 100 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
1.8
2.0
2.2
2.4
V
V
VGE(th) gate emitter threshold voltage IC = 4 mA; VGE = VCE TVJ = 25°C 5 6 7 V
ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C
TVJ = 125°C 0.9
0.3
3
mA
mA
IGES gate emitter leakage current VGE = ±20 V 200 nA
Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz 7430 pF
QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 100 A 750 nC
td(on)
tr
td(off)
tf
Eon
Eoff
Erec(off)
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse recovery losses at turn-off
inductive load TVJ = 125°C
VCE = 600 V; IC = 100 A
VGE = ±15 V; RG = 10 W
LS = 70 nH
120
55
460
240
9.5
9.7
4.2
ns
ns
ns
ns
mJ
mJ
mJ
RBSOA reverse bias safe operating area
V
GE
= ±15 V; R
G
= 10 W;
TVJ = 125°C
VCEK = 1200 V 200 A
SCSOA
tSC
short circuit safe operating area
short circuit duration
short circuit current
VCE = 900 V; VGE = ±10 V; TVJ = 125°C
RG = 3.9 W; non-repetitive
10 µs
RthJC thermal resistance junction to case (per IGBT) 0.2 K/W
TC = 25°C unless otherwise stated
© 2010 IXYS All rights reserved 3 - 8
20101111d
MIEB100W1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
Temperature Sensor NTC
Ratings
Symbol Definitions Conditions min. typ. max. Unit
R25
B25/50
resistance TC = 25°C 4.75 5.0
3510
5.25 kW
K
Module
Ratings
Symbol Definitions Conditions min. typ. max. Unit
TVJ
TVJM
Tstg
operating temperature
max. virtual junction temperature
storage temperature
-40
-40
125
150
125
°C
°C
°C
VISOL isolation voltage IISOL < 1 mA; 50/60 Hz t = 1 min
t = 1 s
3000
3600
V~
V~
CTI comparative tracking index 200
Mdmounting torque (M5) 3 6 Nm
Rpin to chip see 1.8 mW
dS
dA
creep distance on surface
strike distance through air
12.7
9.6
mm
mm
RthCH thermal resistance case to heatsink with heatsink compound 0.1 K/W
Weight 300 g
VCE = VCE(sat) + 2x Rpin to chip · IC TC = 25°C unless otherwise stated
Curves are measured on modul level except Fig. 14 to Fig. 17
© 2010 IXYS All rights reserved 4 - 8
20101111d
MIEB100W1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
XXX XX-XXXXX YYCWx
Part name
Date Code
Logo Prod.Index
Part number
M = Module
I = IGBT
E = NPT
B = 2nd Generation
100 = Current Rating [A]
W = Six-Pack
1200 = Reverse Voltage [V]
T = NTC
EH = E3-Pack
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard MIEB100W1200TEH MIEB100W1200TEH Box 5 510118
Circuit Diagram
Outline Drawing Dimensions in mm (1 mm = 0.0394“)
Product Marking
9
10
11
12
5
6
7
8
1
2
3
4
NTC
19
20
16, 17, 18
13, 14, 15
27
28
29
24
25
26
21
22
23
30, 31, 32
33, 34, 35
D1 D5
D2 D4 D6
D3
T1 T3 T5
T2 T4 T6
© 2010 IXYS All rights reserved 5 - 8
20101111d
MIEB100W1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
Transistor T1 - T6
0 1 2 3 4 5
0
60
120
180
240
300
0 40 80 120 160 200
0
10
20
30
40
0
20
40
60
80
100
120
140
160
0 1 2 3 4 5
0
60
120
180
240
300
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9 V
11 V
4 5 6 7 8 9 10 11 12 13
0
50
100
150
200
250
0 200 400 600 800 1000
0
5
10
15
20
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
13 V
0 40 80 120 160 200
0
4
8
12
16
20
24
28
32
150
200
250
300
350
400
450
500
550
E
[mJ]
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
VGE = 15 V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. turn-on energy & switching times
versus collector current
t
d(off)
Fig. 6 Typ. turn-off energy & switching times
versus collector current
I
C
[A]
E
[mJ]
I
C
[A]
E
on
R
G
= 10 Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
V
GE
= 15 V
T
VJ
= 125°C
I
C
= 100 A
V
CE
= 600 V
t
d(on)
t
r
t
f
R
G
= 10 Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
t
[ns]
t
[ns]
E
off
E
rec(off)
x 5
© 2010 IXYS All rights reserved 6 - 8
20101111d
MIEB100W1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
0 5 10 15 20 25 30 35
0
2
4
6
8
10
12
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30 35
0
5
10
15
20
25
0
50
100
150
200
250
RG [Ω]
tf
td(off)
Eoff
Fig. 7 Typ. turn on energy & switching times
versus gate resistor
Fig. 8 Typ. turn off energy & switching times
versus gate resistor
E
[mJ]
E
[mJ]
IC = 100 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
t
[ns]
Eon
Erec(off)
tr
td(on)
RG [Ω]
IC = 100 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
Transistor T1 - T6
© 2010 IXYS All rights reserved 7 - 8
20101111d
MIEB100W1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
Diode D1 - D6 & NTC
0 25 50 75 100 125 150
10
100
1000
10000
100000
R
[Ω]
Fig.13 Typ. NTC resistance vs. temperature
T
C
[°C]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
50
100
150
200
250
300
I
F
[A]
V
F
[V]
Fig. 9 Typ. forward characteristics
1000 1500 2000 2500 3000
0
50
100
150
200
250
0
100
200
300
400
500
I
rr
[A]
di
F
/dt [A/µs]
33 Ω
Fig. 10 Typ. reverse recovery characteristics
Fig. 11 Typ. reverse recovery characteristics
0 25 50 75 100 125 150 175 200 225
0
50
100
150
0
5
10
15
20
25
30
I
rr
[A]
I
F
[A]
I
rr
0.1 1 10 100 1000 10000
0.0
0.1
0.2
0.3
0.4
0.5
t
p
[ms]
Z
thJC
[K/W]
Fig. 12 Typ. transient thermal impedance
IGBT
Diode
T
VJ
= 25°C
T
VJ
= 125°C
t
rr
[ns]
I
F
= 100 A
V
r
= 600 V
T
VJ
= 125°C
22 Ω
10 Ω
3.3
Ω
Q
rr
R
g
= 10 Ω
V
r
= 600 V
T
VJ
= 125°C
Q
rr
[µC]
t
rr
I
rr
IGBT FRD
RitiRiti
0.003 0.00001 0.015 0.0005
0.010 0.0014 0.004 0.006
0.057 0.021 0.09 0.025
0.130 0.1 0.255 0.125
© 2010 IXYS All rights reserved 8 - 8
20101111d
MIEB100W1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
1000 1200 1400 1600 1800 2000 2200
4
8
12
16
20
24
Qrr
[µC]
diF /dt [A/µs]
TVJ = 125°C
VR = 600 V
50 A
100 A
200 A
Fig. 14 Typ. reverse recov.charge Qrr vs. di/dt
1000 1200 1400 1600 1800 2000 2200
0
100
200
300
400
500
600
700
trr
[ns]
diF /dt [A/µs]
200 A
50 A
100 A
TVJ = 125°C
VR = 600 V
Fig. 16 Typ. recovery time trr versus di/dt
Fig. 15 Typ. peak reverse current IRM vs. di/dt
diF /dt [A/µs]
1000 1200 1400 1600 1800 2000 2200
40
60
80
100
120
140
160
Irr
[A]
TVJ = 125°C
VR = 600 V
200 A
50 A
100 A
Fig. 17 Typ. recovery energy Erec versus di/dt
Erec
[mJ]
diF /dt [A/µs]
200 A
50 A
100 A
1000 1200 1400 1600 1800 2000 2200
0
2
4
6
8
TVJ = 125°C
VR = 600 V
