MIEB100W1200TEH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE(sat) = 1.8 V Part name (Marking on product) MIEB100W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 D5 T3 9 10 6 2 27 28 29 NTC T5 24 25 26 21 22 23 E72873 Pin configuration see outlines. 20 D2 3 T2 4 D6 D4 7 8 T4 11 T6 12 13, 14, 15 33, 34, 35 Features: Application: Package: * SPT IGBT technology * low saturation voltage * low switching losses * square RBSOA, no latch up * high short circuit capability * positive temperature coefficient for easy parallelling * MOS input, voltage controlled * SONICTM free wheeling diode - fast and soft revere recovery - low operation forward voltage * solderable pins for PCB mounting * package with copper base plate * AC motor drives * Solar inverter * Medical equipment * Uninterruptible power supply * Air-conditioning systems * Welding equipment * Switched-mode and resonant-mode power supplies * "E3-Pack" standard outline * Insulated copper base plate * Soldering pins for PCB mounting * Temperature sense included + IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20101111d 1-8 MIEB100W1200TEH Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage 1200 V 20 30 V V IC25 IC80 collector current TC = 25C TC = 80C 183 128 A A Ptot total power dissipation TC = 25C 630 W VCE(sat) collector emitter saturation voltage (on chip level) IC = 100 A; VGE = 15 V 2.2 2.4 V V VGE(th) gate emitter threshold voltage IC = 4 mA; VGE = VCE TVJ = 25C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25C TVJ = 125C IGES gate emitter leakage current VGE = 20 V Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz 7430 pF QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 100 A 750 nC td(on) tr td(off) tf Eon Eoff Erec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off inductive load VCE = 600 V; IC = 100 A VGE = 15 V; RG = 10 W LS = 70 nH TVJ = 125C 120 55 460 240 9.5 9.7 4.2 ns ns ns ns mJ mJ mJ RBSOA reverse bias safe operating area VGE = 15 V; RG = 10 W; TVJ = 125C VCEK = 1200 V 200 A SCSOA tSC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = 10 V; RG = 3.9 W; non-repetitive TVJ = 125C 10 s RthJC thermal resistance junction to case (per IGBT) 0.2 K/W max. Unit TVJ = 25C continuous transient TVJ = 25C TVJ = 125C 1.8 2.0 5 6 7 V 0.9 0.3 3 mA mA 200 nA Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. VRRM max. repetitve reverse voltage TVJ = 25C 1200 V IF25 IF80 forward current TC = 25C TC = 80C 135 90 A A VF forward voltage (on chip level) IF = 100 A; VGE = 0 V 2.20 2.25 V V Irr trr Qrr Erec max. reverse recovery current reverse recovery time inductive load VCE = 600 V; IC = 100 A VGE = 15 V; RG = 10 W LS = 70 nH RthJC thermal resistance junction to case TVJ = 25C TVJ = 125C TVJ = 125C typ. 2.00 1.95 120 330 12.5 4.2 (per diode) A ns C mJ 0.4 K/W TC = 25C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20101111d 2-8 MIEB100W1200TEH Temperature Sensor NTC Symbol R25 B25/50 Definitions Conditions TC = 25C resistance min. 4.75 Ratings typ. max. 5.0 5.25 3510 Unit kW K min. -40 Ratings typ. max. 125 150 125 Unit C C C 3000 3600 V~ V~ Module Symbol TVJ TVJM Tstg Definitions operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index Md mounting torque (M5) Rpin to chip see dS dA creep distance on surface strike distance through air RthCH thermal resistance case to heatsink Conditions -40 IISOL < 1 mA; 50/60 Hz t = 1 min t=1s 200 3 6 1.8 12.7 9.6 with heatsink compound Weight VCE = VCE(sat) + 2x Rpin to chip * IC Nm mW mm mm 0.1 K/W 300 g TC = 25C unless otherwise stated Curves are measured on modul level except Fig. 14 to Fig. 17 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20101111d 3-8 MIEB100W1200TEH Circuit Diagram 30, 31, 32 16, 17, 18 D1 1 19 5 2 20 T3 9 3 4 Logo 24 25 26 D2 T2 T5 21 22 23 Prod.Index Date Code T4 8 Part number M I E B 100 W 1200 T EH D6 D4 7 Part name YYCWx 10 6 27 28 29 NTC XXX XX-XXXXX D5 D3 T1 11 T6 12 33, 34, 35 = Module = IGBT = NPT = 2nd Generation = Current Rating [A] = Six-Pack = Reverse Voltage [V] = NTC = E3-Pack 13, 14, 15 Outline Drawing Dimensions in mm (1 mm = 0.0394") Product Marking Ordering Part Name Marking on Product Standard MIEB100W1200TEH MIEB100W1200TEH IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Box 5 510118 20101111d 4-8 MIEB100W1200TEH Transistor T1 - T6 300 300 VGE = 15 V 17 V 19 V VGE = 15 V 240 240 180 IC [A] 11 V IC TVJ = 125C 120 [A] 120 60 0 TVJ = 125C 180 TVJ = 25C 60 0 1 2 3 4 0 5 9V 0 1 2 Fig. 1 Typ. output characteristics 800 1000 IC = 100 A VCE = 600 V 15 150 VGE 10 [V] [A] 100 5 TVJ = 125C 50 TVJ = 25C 0 4 5 6 7 8 9 10 11 12 13 0 200 400 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 40 RG = 10 VCE = 600 V VGE = 15 V TVJ = 125C 30 td(on) tr E 20 10 Eon 40 160 32 550 140 28 500 120 24 100 20 80 t 60 [ns] Erec(off) x 5 0 80 120 160 200 E [mJ] td(off) 450 RG = 10 VCE = 600 V VGE = 15 V TVJ = 125C 16 400 [ns] 300 40 8 250 20 4 0 Fig. 5 Typ. turn-on energy & switching times versus collector current IXYS reserves the right to change limits, test conditions and dimensions. 0 t 350 12 IC [A] (c) 2010 IXYS All rights reserved 600 QG [nC] VGE [V] 0 5 20 200 [mJ] 4 Fig. 2 Typ. output characteristics 250 0 3 VCE [V] VCE [V] IC 13 V 200 Eoff 0 tf 40 80 120 160 200 150 IC [A] Fig. 6 Typ. turn-off energy & switching times versus collector current 20101111d 5-8 MIEB100W1200TEH Transistor T1 - T6 25 250 IC = 100 A VCE = 600 V VGE = 15 V TVJ = 125C 20 E [mJ] td(on) 12 1200 td(off) 10 200 Eoff IC = 100 A VCE = 600 V VGE = 15 V TVJ = 125C 8 15 150 10 tr 100 t E [ns] [mJ] 6 1000 800 600 4 400 Eon 5 0 50 Erec(off) 0 5 10 15 20 25 30 0 35 RG [] Fig. 7 Typ. turn on energy & switching times versus gate resistor IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 2 0 tf 0 5 10 15 20 25 30 200 0 35 RG [] Fig. 8 Typ. turn off energy & switching times versus gate resistor 20101111d 6-8 MIEB100W1200TEH Diode D1 - D6 & NTC 250 300 500 33 250 TVJ = 25C IF 22 200 150 Irr 150 [A] [A] trr 300 trr 100 [ns] 3.3 200 Irr 100 50 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 0 1000 4.0 1500 2000 Fig. 10 Typ. reverse recovery characteristics 150 0.5 30 IGBT Qrr 15 [A] ZthJC 0.057 0.021 0.09 0.025 0.130 0.1 0.255 0.125 0.3 Qrr [K/W] [C] 50 Diode 0.4 0.010 0.0014 0.004 0.006 20 Irr ti Ri 0.003 0.00001 0.015 0.0005 25 100 FRD ti Ri Irr 0 3000 2500 diF /dt [A/s] VF [V] Fig. 9 Typ. forward characteristics IGBT 0.2 10 Rg = 10 Vr = 600 V TVJ = 125C 0 10 IF = 100 A Vr = 600 V TVJ = 125C 200 TVJ = 125C 400 0 25 50 75 0.1 5 0.0 0.1 0 100 125 150 175 200 225 1 10 100 1000 10000 tp [ms] IF [A] Fig. 12 Typ. transient thermal impedance Fig. 11 Typ. reverse recovery characteristics 100000 10000 R 1000 [] 100 10 0 25 50 75 100 125 150 TC [C] Fig.13 Typ. NTC resistance vs. temperature IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20101111d 7-8 MIEB100W1200TEH 24 160 TVJ = 125C VR = 600 V VR = 600 V 200 A Irr Qrr 16 [A] 100 A [C] 12 200 A TVJ = 125C 140 20 100 A 120 50 A 100 80 50 A 8 60 4 1000 1200 1400 1600 1800 2000 40 1000 2200 1200 1400 1600 1800 2000 2200 diF /dt [A/s] diF /dt [A/s] Fig. 15 Typ. peak reverse current IRM vs. di/dt Fig. 14 Typ. reverse recov.charge Qrr vs. di/dt 700 8 200 A TVJ = 125C TVJ = 125C 600 VR = 600 V VR = 600 V 6 500 200 A trr 400 [ns] 300 Erec [mJ] 100 A 200 100 A 4 50 A 2 50 A 100 0 1000 1200 1400 1600 1800 2000 2200 diF /dt [A/s] Fig. 16 Typ. recovery time trr versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 0 1000 1200 1400 1600 1800 2000 2200 diF /dt [A/s] Fig. 17 Typ. recovery energy Erec versus di/dt 20101111d 8-8 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: MIEB100W1200TEH