SupreMOSTM FCP13N60N / FCPF13N60NT N-Channel MOSFET 600V, 13A, 0.258 Features Description * RDS(on) = 0.244 ( Typ.) @ VGS = 10V, ID = 6.5A The SupreMOS MOSFET, Fairchild's next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry's AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. * Ultra Low Gate Charge ( Typ.Qg = 30.4nC) * Low Effective Output Capacitance * 100% Avalanche Tested * RoHS Compliant D G G D S TO-220 FCP Series TO-220F FCPF Series GD S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage -Continuous (TC = 25oC) FCP13N60N FCPF13N60NT 600 Units V 30 V 13 13* 8.2 8.2* ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current 4.3 A EAR Repetitive Avalanche Energy 1.16 mJ 100 V/ns dv/dt -Continuous (TC = 100oC) - Pulsed 39 (Note 2) Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds - Derate above 25oC 39 A 235 MOSFET dv/dt Ruggedness PD TL (Note 1) A mJ 20 V/ns 116 33.8 W 0.93 0.27 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCP13N60N FCPF13N60NT RJC Thermal Resistance, Junction to Case 1.07 3.7 RCS Thermal Resistance, Case to Heak Sink ( Typical) 0.5 0.5 RJA Thermal Resistance, Junction to Ambient 62.5 62.5 (c)2009 Fairchild Semiconductor Corporation FCP13N60N / FCPF13N60NT Rev. A 1 Units o C/W www.fairchildsemi.com FCP13N60N / FCPF13N60NT N-Channel MOSFET August 2009 Device Marking FCP13N60N Device FCP13N60N Package TO-220 Reel Size - Tape Width - Quantity 50 FCPF13N60NT FCPF13N60NT TO-220F - - 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 600 - - V - 0.73 - V/oC Off Characteristics BVDSS BVDSS TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 1mA, VGS = 0V, TC = 25oC ID = 1mA, Referenced to 25oC VDS = 480V, VGS = 0V - - 10 VDS = 480V, VGS = 0V, TC = 125oC - - 100 VGS = 30V, VDS = 0V - - 100 A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250A 2.0 - 4.0 V Static Drain to Source On Resistance VGS = 10V, ID = 6.5A - 0.244 0.258 gFS Forward Transconductance VDS = 40V, ID = 6.5A - 16.3 - S VDS = 100V, VGS = 0V f = 1MHz - 1325 1765 pF - 50 65 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 3 5 pF Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 30 - pF Cosseff Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 145 - pF Qg(tot) Total Gate Charge at 10V 30.4 39.5 nC Qgs Gate to Source Gate Charge VDS = 380V,ID = 6.5A VGS = 10V - 6.0 - nC Qgd Gate to Drain "Miller" Charge - 9.5 - nC ESR Equivalent Series Resistance (G-S) - 2.8 - - 14.5 39 ns - 10.6 31.2 ns - 45 100 ns - 9.8 29.6 ns (Note 4) Drain Open Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380V, ID = 6.5A RG = 4.7 (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 13 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 39 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 6.5A - - 1.2 V trr Reverse Recovery Time - 287 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 6.5A dIF/dt = 100A/s - 3.5 - C Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 4.3A, RG = 25, Starting TJ = 25C 3. ISD 13A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics FCP13N60N / FCPF13N60NT Rev. A 2 www.fairchildsemi.com FCP13N60N / FCPF13N60NT N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 60 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V ID, Drain Current[A] ID, Drain Current[A] 40 10 10 o 150 C o 25 C 1 *Notes: 1. 250s Pulse Test *Notes: 1. VDS = 20V 2. 250s Pulse Test o 3 0.6 2. TC = 25 C 1 10 0.2 20 2 VDS, Drain-Source Voltage[V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.6 0.4 VGS = 10V VGS = 20V 0.2 o 150 C *Notes: TC = 25 C 0 10 20 30 ID, Drain Current [A] *Notes: 1. VGS = 0V 1 0.4 40 Figure 5. Capacitance Characteristics 2. 250s Pulse Test 0.8 1.2 VSD, Body Diode Forward Voltage [V] 1.6 Figure 6. Gate Charge Characteristics 10 50000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10000 Ciss 1000 100 Coss 10 1 0.1 o 25 C 10 o Capacitances [pF] 8 100 IS, Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 4 6 VGS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.8 0.0 o -55 C *Notes: 1. VGS = 0V 2. f = 1MHz Crss 1 10 100 VDS, Drain-Source Voltage [V] FCP13N60N / FCPF13N60NT Rev. A 8 6 4 2 0 600 3 VDS = 120V VDS = 380V VDS = 480V *Notes: ID = 6.5A 0 10 20 30 Qg, Total Gate Charge [nC] 40 www.fairchildsemi.com FCP13N60N / FCPF13N60NT N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 -50 0 50 100 150 o TJ, Junction Temperature [ C] 10s ID, Drain Current [A] 10s 100s 10 1ms 10ms 1 DC Operation in This Area is Limited by R DS(on) 1ms Operation in This Area is Limited by R DS(on) DC *Notes: o 1. TC = 25 C o o o 2. TJ = 150 C 3. Single Pulse 10 100 VDS, Drain-Source Voltage [V] 10ms 1 1. TC = 25 C 1 100s 10 0.1 *Notes: 0.1 200 Figure 10. Maximum Safe Operating Area _ FCPF13N60NT 100 100 0.01 0.1 *Notes: 1. VGS = 10V 2. ID = 6.5A 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area _ FCP13N60N ID, Drain Current [A] 2.5 0.01 0.1 1000 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 11. Maximum Drain Current vs. Case Temperature 15 ID, Drain Current [A] 12 9 6 3 0 25 50 75 100 125 o TC, Case Temperature [ C] FCP13N60N / FCPF13N60NT Rev. A 150 4 www.fairchildsemi.com FCP13N60N / FCPF13N60NT N-Channel MOSFET Typical Performance Characteristics (Continued) FCP13N60N / FCPF13N60NT N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve _ FCP13N60N Thermal Response [ZJC] 2 1 0.5 0.2 0.1 PDM 0.1 t1 PDM *Notes: 0.05 t2 t1 o 1. ZJC(t) = t1.07 C/W Max. 2 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) 0.02 0.01 Single pulse 0.01 -5 10 -4 10 -3 -2 -1 10 10 Rectangular Pulse Duration [sec] 10 Figure 13. Transient Thermal Response Curve _ FCPF13N60NT Thermal Response [ZJC] 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 *Notes: 0.01 t2 o 1. ZJC(t) = 3.7 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) Single pulse 0.01 -5 10 FCP13N60N / FCPF13N60NT Rev. A -4 10 -3 -2 -1 0 10 10 10 10 Rectangular Pulse Duration [sec] 5 1 10 2 10 www.fairchildsemi.com FCP13N60N / FCPF13N60NT N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCP13N60N / FCPF13N60NT Rev. A 6 www.fairchildsemi.com FCP13N60N / FCPF13N60NT N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD * d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FCP13N60N / FCPF13N60NT Rev. A 7 www.fairchildsemi.com FCP13N60N / FCPF13N60NT N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters FCP13N60N / FCPF13N60NT Rev. A 8 www.fairchildsemi.com FCP13N60N / FCPF13N60NT N-Channel MOSFET Mechanical Dimensions TO-220F Dimensions in Millimeters FCP13N60N / FCPF13N60NT Rev. A 9 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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