PLVA2668A-T - NXP - Datasheet.Support

DATA SH EET

Product data sheet

Supersedes data of 1999 May 10 2001 Oct 15

DISCRETE SEMICONDUCTORS

PLVA2600A series

Low-voltage avalanche regulator

double diodes

ook, halfpage

M3D088

2001 Oct 15 2

NXP Semiconductors Product data sheet

Low-voltage avalanche regulator double

diodes PLVA2600A series

FEATURES

•Very low dynamic impedance at

low currents: app roximately 1⁄20 of

conventional series

•Hard breakdown knee

•Low noise: approximately 1⁄10 of

conventional series

•Total power dissipation:

max. 250 mW

•Small tolerances of VZ

•Working voltage range:

nom. 5.0 to 6.8 V

•Non-repetitive peak reverse power

dissipation: max. 30 W.

APPLICATIONS

•Low current, low po wer, low noise

applications

•CMOS RAM back-up circuits

•Voltage stabilizers

•Voltage limiters

•Smoke detector rela ys.

DESCRIPTION

The PLVA2600A series consists of

two high performance voltage

regulator diodes with common

anodes, in small SOT23 plastic SMD

packages.

The series cons ists of PLVA2650A to

PLVA2668A.

MARKING

Note

1. ∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

∗ = W: Made in China.

TYPE NUMBER MARKING CODE(1)

PLVA2650A ∗9J

PLVA2653A ∗9K

PLVA2656A ∗9L

PLVA2659A ∗9M

PLVA2662A ∗9N

PLVA2665A ∗9O

PLVA2668A ∗9P

PINNING

PIN DESCRIPTION

1cathode (k1)

2cathode (k2)

3common anode

Fig.1 Simplified outline (SOT23 ) and symbo l .

3MAM245

Top view

2001 Oct 15 3

NXP Semiconductors Pr oduct data sheet

Low-voltage avalanche regulator double

diodes PLVA2600A series

LIMITING VALUES

In accordance wi th the Absolute Maximum Rating System (IEC 60134) .

Note

1. Device mounted on an FR4 printed circuit-board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

IFcontinuous forward current −250 mA

IZRM repetitive peak working current tp = 100 μs; δ = 10% −250 mA

PZSM non-repetitive peak re verse power

dissipation tp = 100 μs; Tj = 150 °C −30 W

Ptot total power dissipation single diode loaded;

Tamb = 25 °C; note 1 −250 mW

double diode loaded;

Tamb = 25 °C; note 1 −180 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

2001 Oct 15 4

NXP Semiconductors Pr oduct data sheet

Low-voltage avalanche regulator double

diodes PLVA2600A series

ELECTRICAL CHARACTERISTIC S

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VFforward voltage IF = 10 mA −−0.9 V

VZworking voltage IZ = 250 μA

PLVA2650A 4.80 5.00 5.20 V

PLVA2653A 5.10 5.30 5.50 V

PLVA2656A 5.40 5.60 5.80 V

PLVA2659A 5.70 5.90 6.10 V

PLVA2662A 6.00 6.20 6.40 V

PLVA2665A 6.30 6.50 6.70 V

PLVA2668A 6.60 6.80 7.00 V

working voltage IZ = 10 μA

PLVA2650A −4.30 −V

PLVA2653A −5.20 −V

PLVA2656A −5.51 −V

PLVA2659A −5.85 −V

PLVA2662A −6.19 −V

PLVA2665A −6.49 −V

PLVA2668A −6.80 −V

RZdynamic resistance 1 kHz superimpos ed;

IZAC is 10% of IZDC; IZ = 250 μA

PLVA2650A −−700 Ω

PLVA2653A −−250 Ω

PLVA2656A to PLVA2668A −−100 Ω

SZtemperatur e coe fficient IZ = 250 μA

PLVA2650A −0.20 −mV/K

PLVA2653A −1.60 −mV/K

PLVA2656A −1.90 −mV/K

PLVA2659A −2.40 −mV/K

PLVA2662A −2.65 −mV/K

PLVA2665A −2.90 −mV/K

PLVA2668A −3.40 −mV/K

IRreverse current VR = 80%; VZ nominal

PLVA2650A −−20 000 nA

PLVA2653A −−5 000 nA

PLVA2656A −−1 000 nA

PLVA2659A −−500 nA

PLVA2662A −−100 nA

PLVA2665A −−50 nA

PLVA2668A −−10 nA

2001 Oct 15 5

NXP Semiconductors Pr oduct data sheet

Low-voltage avalanche regulator double

diodes PLVA2600A series

THERMAL CHARACTE RISTICS

Note

1. Device mounted on an FR4 printed circuit-board.

IRreverse current VR = 50%; VZ nominal

PLVA2650A −34 −nA

PLVA2653A −22 −nA

PLVA2656A −1.1 −nA

PLVA2659A −0.9 −nA

PLVA2662A −0.9 −nA

PLVA2665A −0.9 −nA

PLVA2668A −0.8 −nA

reverse current VR = 90%; VZ nominal

PLVA2650A −21 − μA

PLVA2653A −3.5 − μA

PLVA2656A −1.3 − μA

PLVA2659A −1.0 − μA

PLVA2662A −0.05 − μA

PLVA2665A −0.04 − μA

PLVA2668A −0.006 − μA

ΔVZline regulation

PLVA2659A to PLVA2668A ILO = 10 μA; IHi = 1 mA −−0.1 V

PLVA2656A ILO = 50 μA; IHi = 1 mA −−0.1 V

PLVA2650A ILO = 100 μA; IHi = 1 mA −−0.4 V

PLVA2653A ILO = 100 μA; IHi = 1 mA −−0.2 V

Vnnoise voltage dens ity f = 1 kHz; B = 1 kHz; IZ = 250 μA−−1.0

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-tp thermal resistance from junction to tie-point 360 K/W

Rth j-a thermal resistance from junction to ambient note 1 500 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

μV

------------

2001 Oct 15 6

NXP Semiconductors Pr oduct data sheet

Low-voltage avalanche regulator double

diodes PLVA2600A series

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

99-09-13

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT2

2001 Oct 15 7

NXP Semiconductors Pr oduct data sheet

Low-voltage avalanche regulator double

diodes PLVA2600A series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document befor e initiating or co mpleting a design.

2. The product s ta tus of device(s) described in this do cument may have changed since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t s pecification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such informa tio n.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to informa tion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict between information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

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described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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The information pr e sent ed in this document does not fo rm p art of any quotation or cont ra ct, is b elieve d to be accurate and reli a ble and may be chan ged

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Customer notification

This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were

made to the content, except for the legal definitions and disclaimer s.

Printed in The Netherlands 613514/04/pp8 Date of release: 2001 Oct 15 Document orde r number: 9397 750 08768