1
技术信息/TechnicalInformation
FF500R17KE4
IGBT-模块
IGBT-Module
preparedby:CE
approvedby:MK
dateofpublication:2016-08-09
revision:V2.0 ULapproved(E83335)
62mmC-Series模块采用第四代沟槽栅/场终止IGBT4和第三代发射极控制二极管
62mmC-SeriesmodulewithTrench/FieldstopIGBT4andEmitterControlled3diode
初步数据/PreliminaryData
VCES = 1700V
IC nom = 500A / ICRM = 1000A
典型应用 TypicalApplications
• •大功率变流器 Highpowerconverters
• •电机传动 Motordrives
• •UPS系统 UPSsystems
• •风力发电机 Windturbines
电气特性 ElectricalFeatures
• •提高工作结温Tvjop ExtendedoperatingtemperatureTvjop
• •低VCEsat LowVCEsat
• •无与伦比的坚固性 Unbeatablerobustness
• •VCEsat带正温度系数 VCEsatwithpositivetemperaturecoefficient
机械特性 MechanicalFeatures
• •4kV交流1分钟绝缘 4kVAC1mininsulation
• •封装的CTI>400 PackagewithCTI>400
• •高爬电距离和电气间隙 Highcreepageandclearancedistances
• •绝缘的基板 Isolatedbaseplate
• •标准封装 Standardhousing
ModuleLabelCode
BarcodeCode128
DMX-Code
ContentoftheCode Digit
ModuleSerialNumber 1-5
ModuleMaterialNumber 6-11
ProductionOrderNumber 12-19
Datecode(ProductionYear) 20-21
Datecode(ProductionWeek) 22-23
2
技术信息/TechnicalInformation
FF500R17KE4
IGBT-模块
IGBT-Module
preparedby:CE
approvedby:MK
dateofpublication:2016-08-09
revision:V2.0
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极－发射极电压
Collector-emittervoltage Tvj = 25°C VCES 1700 V
连续集电极直流电流
ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C IC nom 500 A
集电极重复峰值电流
Repetitivepeakcollectorcurrent tP = 1 ms ICRM 1000 A
栅极－发射极峰值电压
Gate-emitterpeakvoltage VGES +/-20 V
特征值/CharacteristicValues min. typ. max.
集电极－发射极饱和电压
Collector-emittersaturationvoltage IC = 500 A, VGE = 15 V
IC = 500 A, VGE = 15 V
IC = 500 A, VGE = 15 V
VCE sat
1,95
2,35
2,45
2,30 V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage IC = 20,0 mA, VCE = VGE, Tvj = 25°C VGEth 5,20 5,80 6,40 V
栅极电荷
Gatecharge VGE = -15 V ... +15 V QG5,75 µC
内部栅极电阻
Internalgateresistor Tvj = 25°C RGint 1,3 Ω
输入电容
Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 45,0 nF
反向传输电容
Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 1,45 nF
集电极-发射极截止电流
Collector-emittercut-offcurrent VCE = 1700 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA
栅极-发射极漏电流
Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload IC = 500 A, VCE = 900 V
VGE = ±15 V
RGon = 1,0 Ω
td on 0,22
0,25
0,26
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload IC = 500 A, VCE = 900 V
VGE = ±15 V
RGon = 1,0 Ω
tr0,04
0,05
0,05
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload IC = 500 A, VCE = 900 V
VGE = ±15 V
RGoff = 1,0 Ω
td off 0,53
0,67
0,71
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload IC = 500 A, VCE = 900 V
VGE = ±15 V
RGoff = 1,0 Ω
tf0,10
0,16
0,18
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse IC = 500 A, VCE = 900 V, LS = 35 nH
VGE = ±15 V, di/dt = 10000 A/µs (Tvj = 150°C)
RGon = 1,0 ΩEon
91,5
130
140
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断损耗能量(每脉冲）
Turn-offenergylossperpulse IC = 500 A, VCE = 900 V, LS = 35 nH
VGE = ±15 V, du/dt = 3000 V/µs (Tvj = 150°C)
RGoff = 1,0 ΩEoff
94,0
155
170
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
短路数据
SCdata VGE ≤ 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt ISC 2000 A
Tvj = 150°C
tP ≤ 10 µs,
结－外壳热阻
Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 0,0485 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,0241 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 150 °C
3
技术信息/TechnicalInformation
FF500R17KE4
IGBT-模块
IGBT-Module
preparedby:CE
approvedby:MK
dateofpublication:2016-08-09
revision:V2.0
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage Tvj = 25°C VRRM 1700 V
连续正向直流电流
ContinuousDCforwardcurrent IF500 A
正向重复峰值电流
Repetitivepeakforwardcurrent tP = 1 ms IFRM 1000 A
I2t-值
I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C I²t 33000
31500 A²s
A²s
特征值/CharacteristicValues min. typ. max.
正向电压
Forwardvoltage IF = 500 A, VGE = 0 V
IF = 500 A, VGE = 0 V
IF = 500 A, VGE = 0 V
VF
1,95
2,10
2,15
2,60 V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent IF = 500 A, - diF/dt = 10000 A/µs (Tvj=150°C)
VR = 900 V
VGE = -15 V
IRM
770
815
825
A
A
A
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
恢复电荷
Recoveredcharge IF = 500 A, - diF/dt = 10000 A/µs (Tvj=150°C)
VR = 900 V
VGE = -15 V
Qr
120
195
215
µC
µC
µC
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复损耗（每脉冲）
Reverserecoveryenergy IF = 500 A, - diF/dt = 10000 A/µs (Tvj=150°C)
VR = 900 V
VGE = -15 V
Erec
69,0
120
135
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
结－外壳热阻
Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 0,104 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,0354 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 150 °C
4
技术信息/TechnicalInformation
FF500R17KE4
IGBT-模块
IGBT-Module
preparedby:CE
approvedby:MK
dateofpublication:2016-08-09
revision:V2.0
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 4,0 kV
模块基板材料
Materialofmodulebaseplate Cu
内部绝缘
Internalisolation 基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140) Al2O3
爬电距离
Creepagedistance 端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal 29,0
23,0 mm
电气间隙
Clearance 端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal 23,0
11,0 mm
相对电痕指数
Comperativetrackingindex CTI > 400
min. typ. max.
杂散电感,模块
Strayinductancemodule LsCE 20 nH
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch RCC'+EE' 0,46 mΩ
储存温度
Storagetemperature Tstg -40 125 °C
模块安装的安装扭距
Mountingtorqueformodulmounting 螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote M 3,00 6,00 Nm
端子联接扭距
Terminalconnectiontorque 螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote M 2,5 - 5,0 Nm
重量
Weight G 340 g
5
技术信息/TechnicalInformation
FF500R17KE4
IGBT-模块
IGBT-Module
preparedby:CE
approvedby:MK
dateofpublication:2016-08-09
revision:V2.0
初步数据
PreliminaryData
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
VCE [V]
IC [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
0
100
200
300
400
500
600
700
800
900
1000
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
VCE [V]
IC [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
0
100
200
300
400
500
600
700
800
900
1000
VGE = 20V
VGE = 15V
VGE = 12 V
VGE = 10V
VGE = 9V
VGE = 8V
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
VGE [V]
IC [A]
5 6 7 8 9 10 11 12 13
0
100
200
300
400
500
600
700
800
900
1000
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=1Ω,RGoff=1Ω,VCE=900V
IC [A]
E [mJ]
0 100 200 300 400 500 600 700 800 900 1000
0
40
80
120
160
200
240
280
320
360
400
440
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
6
技术信息/TechnicalInformation
FF500R17KE4
IGBT-模块
IGBT-Module
preparedby:CE
approvedby:MK
dateofpublication:2016-08-09
revision:V2.0
初步数据
PreliminaryData
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=500A,VCE=900V
RG [Ω]
E [mJ]
012345678910
0
40
80
120
160
200
240
280
320
360
400
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
t [s]
ZthJC [K/W]
0,001 0,01 0,1 1 10
0,001
0,01
0,1
ZthJC : IGBT
i:
ri[K/W]:
τi[s]:
1
0,00217
0,000443
2
0,00398
0,00654
3
0,0389
0,0552
4
0,00342
1,26
反偏安全工作区IGBT,逆变器（RBSOA）
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=1Ω,Tvj=150°C
VCE [V]
IC [A]
0 200 400 600 800 1000 1200 1400 1600 1800
0
200
400
600
800
1000
1200
IC, Modul
IC, Chip
正向偏压特性二极管,逆变器（典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
VF [V]
IF [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5
0
100
200
300
400
500
600
700
800
900
1000
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
7
技术信息/TechnicalInformation
FF500R17KE4
IGBT-模块
IGBT-Module
preparedby:CE
approvedby:MK
dateofpublication:2016-08-09
revision:V2.0
初步数据
PreliminaryData
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=1Ω,VCE=900V
IF [A]
E [mJ]
0 100 200 300 400 500 600 700 800 900 1000
0
20
40
60
80
100
120
140
160
180
Erec, Tvj = 125°C
Erec, Tvj = 150°C
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=500A,VCE=900V
RG [Ω]
E [mJ]
012345678910
0
20
40
60
80
100
120
140
160
Erec, Tvj = 125°C
Erec, Tvj = 150°C
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
t [s]
ZthJC [K/W]
0,001 0,01 0,1 1 10
0,001
0,01
0,1
1
ZthJC : Diode
i:
ri[K/W]:
τi[s]:
1
0,00767
0,000867
2
0,0414
0,0247
3
0,0459
0,0779
4
0,009
0,968
8
技术信息/TechnicalInformation
FF500R17KE4
IGBT-模块
IGBT-Module
preparedby:CE
approvedby:MK
dateofpublication:2016-08-09
revision:V2.0
初步数据
PreliminaryData
接线图/Circuitdiagram
封装尺寸/Packageoutlines
Infine o n
9
技术信息/TechnicalInformation
FF500R17KE4
IGBT-模块
IGBT-Module
preparedby:CE
approvedby:MK
dateofpublication:2016-08-09
revision:V2.0
初步数据
PreliminaryData
Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2015.
AllRightsReserved.
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警告事项
由于技术所需产品可能含有危险物质。如需了解该等物质的类型，请向离您最近的英飞凌科技办公室接洽。
除非由经英飞凌科技授权代表签署的书面文件中做出另行明确批准的情况外，英飞凌科技的产品不应当被用于任何一项一旦产品失效
或者产品使用的后果可被合理地预料到可能导致人身伤害的任何应用领域。
Terms&Conditionsofusage
IMPORTANTNOTICE
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingthe
applicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthisdocumentandany
applicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseoftheproductofInfineonTechnologies
incustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’stechnical
departmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductinformationgivenin
thisdocumentwithrespecttosuchapplication.
Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
Technologiesoffice(www.infineon.com).
WARNINGS
Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactyour
nearestInfineonTechnologiesoffice.
ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorizedrepresentativesofInfineon
Technologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswhereafailureoftheproductoranyconsequencesof
theusethereofcan
reasonablybeexpectedtoresultinpersonalinjury.