/TechnicalInformation IGBT- IGBT-Module FF500R17KE4 62mmC-Series/IGBT4 62mmC-SeriesmodulewithTrench/FieldstopIGBT4andEmitterControlled3diode /PreliminaryData VCES = 1700V IC nom = 500A / ICRM = 1000A * * * UPS * TypicalApplications * Highpowerconverters * Motordrives * UPSsystems * Windturbines * Tvjop * VCEsat * * VCEsat ElectricalFeatures * ExtendedoperatingtemperatureTvjop * LowVCEsat * Unbeatablerobustness * VCEsatwithpositivetemperaturecoefficient * 4kV1 * CTI>400 * * * MechanicalFeatures * 4kVAC1mininsulation * PackagewithCTI>400 * Highcreepageandclearancedistances * Isolatedbaseplate * Standardhousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CE dateofpublication:2016-08-09 approvedby:MK revision:V2.0 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 /TechnicalInformation IGBT- IGBT-Module FF500R17KE4 PreliminaryData IGBT,/IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES 1700 V ContinuousDCcollectorcurrent TC = 100C, Tvj max = 175C IC nom 500 A Repetitivepeakcollectorcurrent tP = 1 ms ICRM 1000 A VGES +/-20 V Gate-emitterpeakvoltage /CharacteristicValues Collector-emittersaturationvoltage min. IC = 500 A, VGE = 15 V IC = 500 A, VGE = 15 V IC = 500 A, VGE = 15 V Tvj = 25C Tvj = 125C Tvj = 150C VCE sat typ. max. 1,95 2,35 2,45 2,30 V V V 5,80 6,40 V Gatethresholdvoltage IC = 20,0 mA, VCE = VGE, Tvj = 25C Gatecharge VGE = -15 V ... +15 V QG 5,75 C Internalgateresistor Tvj = 25C RGint 1,3 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 45,0 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,45 nF - Collector-emittercut-offcurrent VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA - Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA VGEth () Turn-ondelaytime,inductiveload IC = 500 A, VCE = 900 V VGE = 15 V RGon = 1,0 Tvj = 25C Tvj = 125C Tvj = 150C () Risetime,inductiveload IC = 500 A, VCE = 900 V VGE = 15 V RGon = 1,0 Tvj = 25C Tvj = 125C Tvj = 150C () Turn-offdelaytime,inductiveload IC = 500 A, VCE = 900 V VGE = 15 V RGoff = 1,0 Tvj = 25C Tvj = 125C Tvj = 150C () Falltime,inductiveload IC = 500 A, VCE = 900 V VGE = 15 V RGoff = 1,0 Tvj = 25C Tvj = 125C Tvj = 150C () Turn-onenergylossperpulse IC = 500 A, VCE = 900 V, LS = 35 nH Tvj = 25C VGE = 15 V, di/dt = 10000 A/s (Tvj = 150C)Tvj = 125C RGon = 1,0 Tvj = 150C ( Turn-offenergylossperpulse 5,20 0,22 0,25 0,26 s s s 0,04 0,05 0,05 s s s 0,53 0,67 0,71 s s s 0,10 0,16 0,18 s s s Eon 91,5 130 140 mJ mJ mJ IC = 500 A, VCE = 900 V, LS = 35 nH Tvj = 25C VGE = 15 V, du/dt = 3000 V/s (Tvj = 150C) Tvj = 125C RGoff = 1,0 Tvj = 150C Eoff 94,0 155 170 mJ mJ mJ SCdata VGE 15 V, VCC = 1000 V VCEmax = VCES -LsCE *di/dt ISC 2000 A Thermalresistance,junctiontocase IGBT/perIGBT RthJC Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH Temperatureunderswitchingconditions tP 10 s, Tvj = 150C td on tr td off tf Tvj op preparedby:CE dateofpublication:2016-08-09 approvedby:MK revision:V2.0 2 0,0485 K/W 0,0241 -40 K/W 150 C /TechnicalInformation IGBT- IGBT-Module FF500R17KE4 PreliminaryData ,/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms I2t- It-value VR = 0 V, tP = 10 ms, Tvj = 125C VR = 0 V, tP = 10 ms, Tvj = 150C VRRM 1700 V IF 500 A IFRM 1000 A It 33000 31500 /CharacteristicValues min. As As typ. max. 2,60 VF 1,95 2,10 2,15 IF = 500 A, - diF/dt = 10000 A/s (Tvj=150C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Tvj = 150C IRM 770 815 825 A A A Recoveredcharge IF = 500 A, - diF/dt = 10000 A/s (Tvj=150C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Tvj = 150C Qr 120 195 215 C C C Reverserecoveryenergy IF = 500 A, - diF/dt = 10000 A/s (Tvj=150C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Tvj = 150C Erec 69,0 120 135 mJ mJ mJ Thermalresistance,junctiontocase /perdiode RthJC Thermalresistance,casetoheatsink /perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH Forwardvoltage IF = 500 A, VGE = 0 V IF = 500 A, VGE = 0 V IF = 500 A, VGE = 0 V Tvj = 25C Tvj = 125C Tvj = 150C Peakreverserecoverycurrent Temperatureunderswitchingconditions Tvj op preparedby:CE dateofpublication:2016-08-09 approvedby:MK revision:V2.0 3 V V V 0,104 K/W 0,0354 -40 K/W 150 C /TechnicalInformation IGBT- IGBT-Module FF500R17KE4 PreliminaryData /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 4,0 kV Cu Materialofmodulebaseplate Internalisolation (class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 Creepagedistance /terminaltoheatsink /terminaltoterminal 29,0 23,0 mm Clearance /terminaltoheatsink /terminaltoterminal 23,0 11,0 mm > 400 Comperativetrackingindex CTI min. , Strayinductancemodule ,- Moduleleadresistance,terminals-chip TC=25C,/perswitch Storagetemperature 20 nH RCC'+EE' 0,46 m Tstg -40 125 C 6,00 Nm 5,0 Nm M6 ScrewM6-Mountingaccordingtovalidapplicationnote M 3,00 Terminalconnectiontorque M6 ScrewM6-Mountingaccordingtovalidapplicationnote M 2,5 G preparedby:CE dateofpublication:2016-08-09 approvedby:MK revision:V2.0 4 max. LsCE Mountingtorqueformodulmounting Weight typ. 340 g /TechnicalInformation IGBT- IGBT-Module FF500R17KE4 PreliminaryData IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150C 1000 1000 Tvj = 25C Tvj = 125C Tvj = 150C 800 800 700 700 600 600 500 400 300 300 200 200 100 100 0,0 0,5 1,0 1,5 2,0 VCE [V] 2,5 3,0 3,5 0 4,0 IGBT,() transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 440 Tvj = 25C Tvj = 125C Tvj = 150C 900 Eon, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 125C Eoff, Tvj = 150C 400 360 800 320 700 280 E [mJ] 600 500 400 240 200 160 300 120 200 80 100 0 0,0 IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=1,RGoff=1,VCE=900V 1000 IC [A] 500 400 0 VGE = 20V VGE = 15V VGE = 12 V VGE = 10V VGE = 9V VGE = 8V 900 IC [A] IC [A] 900 40 5 6 7 8 9 VGE [V] 10 11 12 0 13 preparedby:CE dateofpublication:2016-08-09 approvedby:MK revision:V2.0 5 0 100 200 300 400 500 600 700 800 900 1000 IC [A] /TechnicalInformation IGBT- IGBT-Module FF500R17KE4 PreliminaryData IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=500A,VCE=900V IGBT, transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 400 0,1 Eon, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 125C Eoff, Tvj = 150C 360 ZthJC : IGBT 320 280 ZthJC [K/W] E [mJ] 240 200 160 0,01 120 80 i: 1 2 3 4 ri[K/W]: 0,00217 0,00398 0,0389 0,00342 i[s]: 0,000443 0,00654 0,0552 1,26 40 0 0 1 2 3 4 5 6 RG [] 7 8 9 0,001 0,001 10 IGBT,RBSOA reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=1,Tvj=150C 0,01 0,1 t [s] 1 10 ,) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 1200 1000 IC, Modul IC, Chip Tvj = 25C Tvj = 125C Tvj = 150C 900 1000 800 700 800 IF [A] IC [A] 600 600 500 400 400 300 200 200 100 0 0 200 400 600 0 800 1000 1200 1400 1600 1800 VCE [V] preparedby:CE dateofpublication:2016-08-09 approvedby:MK revision:V2.0 6 0,0 0,5 1,0 1,5 2,0 VF [V] 2,5 3,0 3,5 /TechnicalInformation IGBT- IGBT-Module FF500R17KE4 PreliminaryData ,) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=1,VCE=900V ,) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=500A,VCE=900V 180 160 Erec, Tvj = 125C Erec, Tvj = 150C 160 Erec, Tvj = 125C Erec, Tvj = 150C 140 140 120 120 100 E [mJ] E [mJ] 100 80 80 60 60 40 40 20 20 0 0 0 100 200 300 400 500 600 700 800 900 1000 IF [A] , transientthermalimpedanceDiode,Inverter ZthJC=f(t) 1 ZthJC : Diode ZthJC [K/W] 0,1 0,01 i: 1 2 3 4 ri[K/W]: 0,00767 0,0414 0,0459 0,009 i[s]: 0,000867 0,0247 0,0779 0,968 0,001 0,001 0,01 0,1 t [s] 1 10 preparedby:CE dateofpublication:2016-08-09 approvedby:MK revision:V2.0 7 0 1 2 3 4 5 6 RG [] 7 8 9 10 /TechnicalInformation IGBT- IGBT-Module FF500R17KE4 PreliminaryData /Circuitdiagram /Packageoutlines Infineon preparedby:CE dateofpublication:2016-08-09 approvedby:MK revision:V2.0 8 /TechnicalInformation IGBT- IGBT-Module FF500R17KE4 PreliminaryData Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)InfineonTechnologiesAG2015. 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