BC846BWT/R - NXP Semiconductors / Philips Semiconductors

1. Product profile

1.1 General description

NPN general-purpose transistors in Surface Mounte d Device (SMD) plastic packages.

[1] Valid for all available selection groups.

[2] Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2 Features

General-purpose transistors

SMD plastic packages

Two different gain selections

1.3 Applications

General-purpose switching and amplification

1.4 Quick reference data

BC846/BC546 series

65 V, 100 mA NPN general-purpose transistors

Rev. 07 — 17 November 2009 Product data sheet

Table 1. Product overview

Type number[1] Package PNP

complement

NXP JEITA JEDEC

BC846 SOT23 - TO-236AB BC856

BC846W SOT323 SC-70 - BC856W

BC846T SOT416 SC-75 - BC856T

BC546A[2] SOT54 SC-43A TO-92 BC556A

BC546B[2] SOT54 SC-43A TO-92 BC556B

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - 65 V

ICcollector current - - 100 mA

hFE DC current gai n VCE =5V;

IC=2mA 110 - 450

hFE group A 110 180 220

hFE group B 200 290 450

Product data sheet Rev. 07 — 17 November 2009 2 of 14

NXP Semiconductors BC846/BC546 series

65 V, 100 mA NPN general-purpose transistors

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Symbol

SOT23; SOT323; SOT416

1base

2emitter

3 collector

SOT54

1emitter

2base

3 collector

SOT54A

1emitter

2base

3 collector

SOT54 varia nt

1emitter

2base

3 collector

006aaa14

sym02

001aab34

sym02

001aab34

sym02

001aab44

sym02

Product data sheet Rev. 07 — 17 November 2009 3 of 14

NXP Semiconductors BC846/BC546 series

65 V, 100 mA NPN general-purpose transistors

3. Ordering information

[1] Valid for all available selection groups.

[2] Also available in SOT54 and SOT54 variant packages (see Section 2 and Section 9).

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

Table 4. Ordering information

Type number[1] Package

Name Description Version

BC846 - plastic surface mounted package; 3 leads SOT23

BC846W SC-70 plastic surface mounted package; 3 leads SOT323

BC846T SC-75 plastic surface mounted package; 3 leads SOT4 16

BC546A[2] SC-43A plastic single-ended leaded (through hole) package;

3 leads SOT54

BC546B[2] SC-4 3A plastic sing le-ended leaded (through hole) package;

3 leads SOT54

Table 5. Marking codes

Type number Marking code[1] Type number Marking code[1]

BC846 1D* BC846T 1M

BC846A 1A* BC846AT 1A

BC846B 1B* BC846BT 1B

BC846W 1D* BC546A C546A

BC846AW 1A* BC546B C546B

BC846BW 1B* - -

Product data sheet Rev. 07 — 17 November 2009 4 of 14

NXP Semiconductors BC846/BC546 series

65 V, 100 mA NPN general-purpose transistors

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 80 V

VCEO collector-emitter voltage open base - 65 V

VEBO emitter-base voltage open collector - 6 V

ICcollector current - 100 mA

ICM peak collector current single pulse;

tp≤1ms -200mA

IBM peak base current single pulse;

tp≤1ms -200mA

Ptot total power dissipation Tamb ≤25 °C[1]

SOT23 - 250 mW

SOT323 - 200 mW

SOT416 - 150 mW

SOT54 - 500 mW

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Table 7. Thermal characteris tics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1]

SOT23 - - 500 K/W

SOT323 - - 625 K/W

SOT416 - - 833 K/W

SOT54 - - 250 K/W

Product data sheet Rev. 07 — 17 November 2009 5 of 14

NXP Semiconductors BC846/BC546 series

65 V, 100 mA NPN general-purpose transistors

7. Characteristics

[1] Pulse test: tp≤300 μs; δ≤0.02.

[2] VBEsat decreases by approximately 1.7 mV/K with increasing temperature.

[3] VBE decreases by approximately 2 mV/K with increasing temperature.

Table 8. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off

current VCB =30V; I

E=0A - - 15 nA

VCB =30V; I

E=0A;

Tj= 150 °C--5μA

IEBO emitter-base cut-off

current VEB =5V; I

E= 0 A - - 100 nA

hFE DC current gain

hFE group A VCE =5V; I

C=10μA-180-

hFE group B VCE =5V; I

C=10μA-290-

DC current gain VCE =5V; I

C= 2 mA 110 - 450

hFE group A VCE =5V; I

C= 2 mA 110 180 220

hFE group B VCE =5V; I

C= 2 mA 200 290 450

VCEsat collector-emitter

saturation voltage IC=10mA; I

B= 0.5 mA - 90 200 mV

IC= 100 mA; IB=5mA [1] - 200 400 mV

VBEsat base-emitter

saturation voltage IC=10mA; I

B=0.5mA [2] -760- mV

IC= 100 mA; IB=5mA [2] -900- mV

VBE base-emitter voltage IC=2mA; V

CE =5V [3] 580 660 700 mV

IC=10mA; V

CE =5V [3] - - 770 mV

fTtransition frequency VCE =5V; I

C=10mA;

f = 100 MHz 100 - - MHz

Cccollector capacit ance VCB =10V; I

E=i

e=0A;

f=1MHz -23pF

Ceemitter capacitance VEB =0.5V; I

C=i

c=0A;

f=1MHz -11- pF

NF noise figure IC= 200 μA; VCE =5V;

RS=2kΩ; f = 1 kHz;

B=200Hz

- 2 10 dB

Product data sheet Rev. 07 — 17 November 2009 6 of 14

NXP Semiconductors BC846/BC546 series

65 V, 100 mA NPN general-purpose transistors

VCE =5V

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

VCE =5V

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 150 °C

Fig 1. Selection A: DC current gain as a function of

collector current; typical values Fig 2. Selection A: Base-emitter voltage as a function

of collector current; typi ca l values

IC/IB=20

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

IC/IB=10

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 150 °C

Fig 3. Selection A: Collector-emitter saturation

voltage as a function of collector current;

typical valu e s

Fig 4. Select ion A: Base-emitter saturation voltage

as a function of collector curre nt; typical

values

mgt723

−1

11010

(mA)

400

300

200

100

(1)

(2)

(3)

mgt724

−1

11010

(mA)

1200

1000

800

600

400

200

(mV)

(1)

(2)

(3)

mgt725

−1

11010

(mA)

CEsat

(mV)

(1)

(2)

(3)

mgt726

−1

11010

(mA)

1200

1000

800

600

400

200

BEsat

(mV)

(1)

(2)

(3)

Product data sheet Rev. 07 — 17 November 2009 7 of 14

NXP Semiconductors BC846/BC546 series

65 V, 100 mA NPN general-purpose transistors

VCE =5V

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

VCE =5V

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 150 °C

Fig 5. Selection B: DC current gain as a function of

collector current; typical values Fig 6. Selection B: Base-emitter voltage as a function

of collector current; typi ca l values

IC/IB=20

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

IC/IB=10

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 150 °C

Fig 7. Selection B: Collector-emitter saturation

voltage as a function of collector current;

typical valu e s

Fig 8. Select ion B: Base-emitter saturation voltage

as a function of collector curre nt; typical

values

mgt727

−1

11010

(mA)

600

500

400

300

200

100

(1)

(2)

(3)

1200

1000

800

600

400

200

mgt728

−2

−1

11010

(mA)

(mV)

(1)

(2)

(3)

104

103

102

mgt729

−1

11010

(mA)

CEsat

(mV)

(1)

(2)

(3)

mgt730

−1

11010

(mA)

1200

1000

800

600

400

200

BEsat

(mV)

(1)

(2)

(3)

Product data sheet Rev. 07 — 17 November 2009 8 of 14

NXP Semiconductors BC846/BC546 series

65 V, 100 mA NPN general-purpose transistors

8. Package outline

Fig 9. Packag e outline SOT23 (TO-236AB) Fig 10. Package outline SOT323 (SC-70)

Fig 11. Package outline SOT416 (SC-75) Fig 12. Package outline SOT54 (SC-43A/TO-92)

Fig 13. Package outline SOT54A Fig 14. Package outline SOT5 4 variant

04-11-04Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1

1.4

1.2

0.48

0.38

0.15

0.09

04-11-04Dimensions in mm

0.45

0.15

1.1

0.8

2.2

1.8

2.2

2.0

1.35

1.15

1.3

0.4

0.3

0.25

0.10

04-11-04Dimensions in mm

0.95

0.60

1.8

1.4

1.75

1.45

0.9

0.7

0.25

0.10

0.30

0.15

30.45

0.15

04-11-16Dimensions in mm

5.2

5.0

14.5

12.7

4.8

4.4

4.2

3.6

0.45

0.38

0.48

0.40

1.27

2.54

04-06-28Dimensions in mm

5.2

5.0

14.5

12.7

4.8

4.4

4.2

3.6

0.45

0.38

0.48

0.40

2.54

5.08

3 max

05-01-10Dimensions in mm

5.2

5.0

14.5

12.7

4.8

4.4

4.2

3.6

0.45

0.38

0.48

0.40

1.27

2.54

2.5

max

Product data sheet Rev. 07 — 17 November 2009 9 of 14

NXP Semiconductors BC846/BC546 series

65 V, 100 mA NPN general-purpose transistors

9. Packing information

[1] For further information and the availability of packing methods, see Section 13.

[2] Valid for all available selection groups.

Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number[2] Package Description Packing quantity

3000 5000 10000

BC846 SOT23 4 mm pitch, 8 mm tape and reel -215 - -235

BC846W SOT323 4 mm pitch, 8 mm tape and reel -115 - -135

BC846T SOT416 4 mm pitch, 8 mm tape and reel -115 - -135

BC546A SOT54 bulk, straight leads - -412 -

SOT54A tape and reel, wide pitch - - -116

tape ammopack, wide pitch - - -126

SOT54 variant bulk, delta pinning - -112 -

BC546B SOT54 bulk, straight leads - -412 -

SOT54A tape and reel, wide pitch - - -116

tape ammopack, wide pitch - - -126

SOT54 variant bulk, delta pinning - -112 -

Product data sheet Rev. 07 — 17 November 2009 10 of 14

NXP Semiconductors BC846/BC546 series

65 V, 100 mA NPN general-purpose transistors

10. Soldering

Dimensions in mm

Fig 15. Reflow soldering footprint SOT23 (TO-236AB)

Dimensions in mm

Fig 16. Wave soldering footprint SOT23 (TO-236AB)

MSA439

1.00

0.60

(3x)

1.30

2.50

3.00

0.85

2.70

2.90

0.50 (3x)

0.60 (3x)

3.30

0.85

solder lands

solder resist

occupied area

solder paste

MSA427

4.00

4.60

2.80

4.50

1.20

3.40

1.20 (2x)

preferred transport direction during soldering

solder lands

solder resist

occupied area

Product data sheet Rev. 07 — 17 November 2009 11 of 14

NXP Semiconductors BC846/BC546 series

65 V, 100 mA NPN general-purpose transistors

Fig 17. Reflow soldering footprint SOT323 (SC-70)

Fig 18. W ave soldering footprint SOT323 (SC-70)

Fig 19. Reflow soldering footprint SOT416 (SC-75)

msa429

0.852.35

0.55

(3×)

1.3250.75

2.40

2.65

1.30

0.60

(3×)

0.50

(3×)1.90

solder lands

solder resist

occupied area

solder paste

Dimensions in mm

msa41

4.00

4.60

2.103.65

1.15

2.70

10.90

(2×)

preferred transport direction during soldering

solder lands

solder resist

occupied area

Dimensions in mm

solder resist occupied area

solder lands solder pasteDimensions in mm

msa438

2.0

0.6

(3x)

0.7

1.5

1.1

2.2

0.5

(3x)

0.85

0.6

1.9

Product data sheet Rev. 07 — 17 November 2009 12 of 14

NXP Semiconductors BC846/BC546 series

65 V, 100 mA NPN general-purpose transistors

11. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BC846_BC546_SER_7 20091117 Product data sheet - BC846_BC546_SER_6

Modifications: •This data sheet was changed to reflec t the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technica l

content.

•Table 3 “Pinning”: updated

•Figure 17 “Reflow soldering footprint SOT323 (SC-70)”: updated

•Figure 18 “Wave soldering footprint SOT323 (SC-70)”: updated

•Figure 19 “Reflow soldering footprint SOT416 (SC-75)”: updated

BC846_BC546_SER_6 20060207 Product data sheet - BC846_BC847_

BC848_5 BC846T_847T_

SERIES_3

BC846W_BC847W_

BC848W_4

BC546_547_4

BC846_BC847_BC848_5 20040206 Product specification - BC846_BC847_

BC848_4

BC846T_847T_SERIES_

320001115 Product specification - BC846T_847T_2

BC846W_BC847W_

BC848W_4 20020204 Product specification - BC846W_847W_3

BC546_547_4 20041125 Product specification - BC546_547_3

Product data sheet Rev. 07 — 17 November 2009 13 of 14

NXP Semiconductors BC846/BC546 series

65 V, 100 mA NPN general-purpose transistors

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warrant ies as to t he accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short dat a sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full informatio n see the relevant full dat a

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

12.3 Disclaimers

General — In formation in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give an y represent ations or

warranties, expressed or impli ed, as to the accuracy or completeness of such

information and shall have no liability for th e co nsequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or application s and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for il lustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ra tings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other co nditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may af fect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sal e, as published

at http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conflict between inf ormation in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Not hing in this document may be interpret ed or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, paten ts or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respective ow ners.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

NXP Semiconductors BC846/BC546 series

65 V, 100 mA NPN general-purpose transistors

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of rele ase: 17 November 2009

Document identifier: BC846_BC546_SER_7

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Packing information . . . . . . . . . . . . . . . . . . . . . 9

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13 Contact information. . . . . . . . . . . . . . . . . . . . . 13

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14