PAGE . 1October 29,2010-REV.02
2N7002K
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
PARAMETER Symbol Limit Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS +20 V
Continuous Drain Current ID300 mA
Pulsed Drain Current 1) IDM 2000 mA
Maximum Power Dissipation TA=25OC
TA=75OCPD
350
210 mW
Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 150 OC
Junction-to Ambient Thermal Resistance(PCB mounted)2RθJA 357 OC/W
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight: 0.0003 ounces, 0.0084 grams
• Marking : K72
SOT-23
Unit inch(mm)：
0.120(3.04)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.004(0.10)MAX.
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
0.006(0.15)MIN.
0.103(2.60)
0.086(2.20)
0.008(0.20)
0.003(0.08)
PAGE . 2October 29,2010-REV.02
ELECTRICAL CHARACTERISTICS
VDD
VOUT
VIN
RG
RL
Switching
Test Circuit
Gate Charge
Test Circuit
VDD
VGS
RG
RL
1mA
Parameter Symbol Test Condition Min. Typ. Max. Units
Static
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V , I
D
=10μA60--V
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
, I
D
=250μA1-2.5V
Drain-Source On-State Resistance R
DS(on)
V
GS
=4.5V , I
D
=200mA - - 4 .0
Ω
Drain-Source On-State Resistance R
DS(on)
V
GS
=10V , I
D
=500mA - - 3.0
Zero Gate Voltage Drain Current I
DSS
V
DS
=60V , V
GS
=0V --1μA
Gate Body Leakage I
GSS
V
GS
=+20V , V
DS
=0V - - +10 μA
Forward Transconductance g
fS
V
DS
=15V , I
D
=250mA 100 - - mS
Dynamic
Total Gate Charge Q
g
V
DS
=15V, I
D
=200mA
V
GS
=5V --0.8nC
Turn-On Ti me t
on
V
DD
=30V , R
L
=150Ω
I
D
=200mA , V
GEN
=10V
R
G
=10Ω
--20
ns
Turn-Off Ti me t
off
--40
Input Capacitance C
iss
V
DS
=25V , V
GS
=0V
f=1.0MH
Z
--35
pFOutput Capacitance C
oss
--10
Reverse Transfer Capacitance C
rss
--5
Source-Drain Diode
Diode Forward Voltage V
SD
I
S
=200mA , V
GS
=0V - 0.82 1.3 V
Continuous Diode Forward Current I
S
- - - 300 mA
Pulse Diode Forward Current I
SM
- - - 2000 mA
2N7002K
PAGE . 3October 29,2010-REV.02
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
Typical Characteristics Curves (T =25 C,unless otherwise noted)
A
O
FIG.2- Transfer Characteristic
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
FIG.5- On Resistance vs Junction Temperature
V
DS
-Drain-to-Source Voltage (V)
I
D
-Drain-to-Source Current (A)
V
GS
-Gate-to-Source Voltage (V)
I
D
-Drain Source Current (A)
I
D
-Drain Current (A)
R
DS(ON)
-On-Resistance
()W
V
GS
- Gate-to-Source Voltage (V)
R
DS(ON)
- On-Resistance
()W
T
J
- Junction Temperature (
o
C)
R
DS(ON)
- On-Resistance(Normalized)
0
0.2
0.4
0.6
0.8
1
1.2
012345
V
GS
= 6.0~10V 5.0V
4.0V
3.0V
0
0.2
0.4
0.6
0.8
1
1.2
0123456
V
DS
=10V
25
o
C
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1
V
GS
=4.5V
V
GS
=10V
0
1
2
3
4
5
2345678910
I
D
=200mA
I
D
=500mA
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
V
GS
=10V
I
D
=500mA
2N7002K
PAGE . 4October 29,2010-REV.02
Fig.6 - Gate Charge Waveform
Fig.8 - Threshold Voltage vs Temperature
Fig.7 - Gate Charge
Fig.9 - Breakdown Voltage vs Junction Temperature
Fig.10 - Source-Drain Diode Forward Voltage
QgdQgs Qg
Qsw
Vgs(th)
Vgs
Qg
Qg(th)
Q
g
- Gate Charge (nC)
V
GS
- Gate-to-Source Volt age (V)
T
J
- Junction Temperature ( C)
V
th
- G-S Threshold Voltage (NORMALIZED)
T
J
- Junction Temperature (
o
C)
BV
DSS
- Breakdown Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
Fig.11 - Capacitance vs Drain to Source Voltage
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1
V
DS=
10V
I
D
=250mA
72
74
76
78
80
82
84
86
88
-50 -25 0 25 50 75 100 125 150
ID = 250 Am
0.7
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
I
D
=250 Am
0.01
0.1
1
10
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V
GS
=0V
25
o
C
-55
o
C
T
J
=125
o
C
0
10
20
30
40
50
60
70
0 5 10 15 20 25
Ciss
f=1MHz
V
GS
=0V
Crss
Coss
2N7002K
PAGE . 5
October 29,2010-REV.02
MOUNTING PAD LAYOUT
l
• Packing information
T/R - 12K per 13" plastic Ree
T/R - 3K per 7” plastic Reel
ORDER INFORMATION
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are
subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its produ cts for
any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any
license under its patent rights or rights of others.
SOT-23
0.031 MIN.
(0.80) MIN.
0.037
(0.95)
0.043
(1.10)
0.078
(2.00)
0.035 MIN.
(0.90) MIN.
0.043
(1.10)
0.106
(2.70)
Unit inch(mm)：
2N7002K
PAGE . 6
2N7002K
October 29,2010-REV.02
For example :
RB500V-40_R2_00001
Part No. Serial number
Version code means HF
Packing size code means 13"
Packing type means T/R
Packing C od e XX Versi on Code XXXXX
Packing
type 1
st
Code Packing
size co de 2
nd
Code HF or RoHS 1
st
Code 2
nd
~5
th
Code
T/B AN/A 0HF 0 s e r ial number
T/R R7" 1RoHS 1 s e r ial number
B/P B13" 2
T/P T26mm X
TRR S52mm Y
TRL LPBCU U
FORMING FPBCD D
Part No_pa cking code _Version
2N7002K_R1_00001
2N7002K_R2_00001