2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unitinch(mm) * RDS(ON), VGS@10V,IDS@500mA=3 0.006(0.15)MIN. * RDS(ON), VGS@4.5V,IDS@200mA=4 0.120(3.04) 0.110(2.80) * Advanced Trench Process Technology * High Density Cell Design For Ultra Low On-Resistance Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. 0.103(2.60) * Specially Designed for Battery Operated Systems, Solid-State Relays 0.056(1.40) * ESD Protected 2KV HBM 0.047(1.20) * Lead free in comply with EU RoHS 2002/95/EC directives. 0.008(0.20) 0.079(2.00) * Green molding compound as per IEC61249 Std. . (Halogen Free) 0.086(2.20) * Very Low Leakage Current In Off Condition 0.003(0.08) 0.070(1.80) MECHANICALDATA * Case: SOT-23 Package 0.044(1.10) 0.004(0.10)MAX. * Terminals : Solderable per MIL-STD-750,Method 2026 0.035(0.90) * Apporx. Weight: 0.0003 ounces, 0.0084 grams 0.020(0.50) * Marking : K72 0.013(0.35) Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Limit Uni ts D ra i n- S o urc e Vo lta g e V DS 60 V G a t e -S o ur c e Vo lt a g e V GS +20 V C o nt i nuo us D ra i n C ur re nt ID 300 mA P uls e d D ra i n C urre nt ID M 2000 mA PD 350 210 mW T J ,T S TG -5 5 to + 1 5 0 RJA 357 1) M a xi mum P o we r D i s s i p a t i o n O p e ra t i ng J unc t i o n a nd S t o ra g e Te mp e r a tur e Ra ng e Junction-to Ambient Thermal Resistance(PCB mounted)2 TA = 2 5 OC TA = 7 5 OC O O C C /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 5 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE October 29,2010-REV.02 PAGE . 1 2N7002K ELECTRICALCHARACTERISTICS P a ra me te r S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts D ra i n-S o urc e B re a k d o wn Vo lta g e B V DSS V G S = 0 V , ID = 1 0 A 60 - - V Ga te Thre s ho ld Vo lta g e V G S ( th) V D S = V GS , I D = 2 5 0 A 1 - 2 .5 V D ra i n-S o urc e On-S t a t e Re s i s ta nc e R D S ( o n) VGS=4.5V , I D=200mA - - 4 .0 D ra i n-S o urc e On-S t a t e Re s i s ta nc e R D S ( o n) VGS=10V , I D=500mA - - 3.0 Ze ro Ga t e Vo lt a g e D ra i n C ur re nt ID S S VDS=60V , VGS=0V - - 1 A Gate Body Leakage I GS S V GS= + 2 0 V , V D S= 0 V - - +10 A Forward Transconductance g fS V D S = 1 5 V , ID = 2 5 0 mA 100 - - mS To ta l Ga te C ha rg e Qg V D S = 1 5 V, ID = 2 0 0 m A VGS=5V - - 0 .8 nC Tur n-On Ti me t on - - 20 Tur n-Off Ti me t off - - 40 Inp ut C a p a c i ta nc e C i ss - - 35 Out p ut C a p a c i t a nc e C oss - - 10 Re ve rs e Tra ns fe r C a p a c i ta nc e C rss - - 5 S t a ti c Dynamic VDD=30V , RL=150 ID=200mA , VGEN=10V RG=10 V D S= 2 5 V , V GS= 0 V f= 1 .0 M H Z ns pF S o ur c e -D ra i n D i o d e D i o d e F o rwa rd Vo lta g e V SD IS=200mA , VGS=0V - 0.82 1.3 V C o nti nuo us D i o d e F o rwa r d C urr e nt IS - - - 300 mA P uls e D i o d e F o r wa rd C ur re nt IS M - - - 2000 mA VDD Switching Test Circuit VIN VDD Gate Charge Test Circuit RL VGS RL VOUT RG 1mA RG October 29,2010-REV.02 PAGE . 2 2N7002K O Typical Characteristics Curves (TA=25 C,unless otherwise noted) 1.2 V GS= 6.0~10V 5.0V 1 0.8 4.0V 0.6 0.4 0.2 3.0V 0 0 1 2 3 4 5 ID - Drain Source Current (A) ID - Drain-to-Source Current (A) 1.2 VDS =10V 1 0.8 0.6 0.4 0.2 25oC 0 0 VDS - Drain-to-Source Voltage (V) 3 4 5 6 FIG.2- Transfer Characteristic 5 RDS(ON) - On-Resistance ( W ) 5 RDS(ON) - On-Resistance ( W ) 2 VGS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic 4 3 V GS = 4.5V 2 1 V GS=10V 0 4 3 ID =500mA 2 ID =200mA 1 0 0 0.2 0.4 0.6 0.8 1 FIG.3- On Resistance vs Drain Current 1.8 1.6 2 3 4 5 6 7 8 9 10 V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) RDS(ON) - On-Resistance(Normalized) 1 FIG.4- On Resistance vs Gate to Source Voltage VGS =10V ID =500mA 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 o TJ - Junction Temperature ( C) FIG.5- On Resistance vs Junction Temperature October 29,2010-REV.02 PAGE . 3 2N7002K V GS - Gate-to-Source Voltage (V) 10 Vgs Qg Qsw Vgs(th) 6 4 2 0 Qg(th) Qgs 0 Qg Qgd VDS=10V ID =250mA 8 0.2 1 0.9 0.8 0 25 50 75 100 125 88 BVDSS - Breakdown Voltage (V) Vth - G-S Th r esh o l d Vo l tag e (NORMA L IZED) 1.1 -25 86 84 82 80 78 76 74 72 -50 150 -25 C - Capacitance (pF) IS - Source Current (A) 75 100 -55oC 25oC 0.6 0.8 1 1.4 150 50 40 30 Ciss 20 Coss 10 1.2 125 f = 1MHz V GS = 0V 60 0.1 1.6 VSD - Source-to-Drain Voltage (V) Fig.10 - Source-Drain Diode Forward Voltage October 29,2010-REV.02 50 70 1 0.4 25 Fig.9 - Breakdown Voltage vs Junction Temperature VGS = 0V 0.01 0.2 0 TJ - Junction Temperature ( o C) Fig.8 - Threshold Voltage vs Temperature TJ = 125oC 1 ID = 250 m A TJ - Junction Temperature ( C) 10 0.8 Fig.7 - Gate Charge ID =250 m A 0.7 -50 0.6 Qg - Gate Charge (nC) Fig.6 - Gate Charge Waveform 1.2 0.4 Crss 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Fig.11 - Capacitance vs Drain to Source Voltage PAGE . 4 2N7002K MOUNTING PAD LAYOUT SOT-23 0.035 MIN. (0.90) MIN. Unitinch(mm) 0.078 (2.00) 0.037 (0.95) 0.043 (1.10) 0.031 MIN. (0.80) MIN. 0.043 (1.10) 0.106 (2.70) ORDER INFORMATION * Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2012 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its produ cts for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. October 29,2010-REV.02 PAGE . 5 2N7002K For example : RB500V-40_R2_00001 Serial number Part No. Version code means HF Packing size code means 13" Packing type means T/R Packing Code XX Version Code XXXXX Packing type 1st Code Packing 2nd Code size code T/B A N/A 0 HF 0 serial number T/R R 7" 1 RoHS 1 serial number B/P B 13" 2 T/P T 26mm X TRR S 52mm Y TRL L PBCU U FORMING F PBCD D HF or RoHS 1st Code 2nd~5th Code Part No_packing code_Version 2N7002K_R1_00001 2N7002K_R2_00001 October 29,2010-REV.02 PAGE . 6