1SS244
Diodes
Switching diode
1SS244
!Applications
High voltage switching
General purpose rectification
!Features
1) Glass sealed envelope. (MSD)
2) VRM=250V guaranteed.
3) High reliability.
!Construction
Silicon epitaxial planar
!
!!
!External dimensions (Units : mm)
φ1.8±0.2
φ0.4±0.1
29.0±1.0
2.7
±
0.3
29.0±1.0
CATHODE BAND (BLACK)
ROHM : MSD
EIAJ : −
JEDEC : DO-34
!
!!
!Absolute maximum ratings (Ta=25°C)
Symbol Limits Unit
V
RM
250 V
V
R
220 V
I
FM
625 mA
I
O
200 mA
I
surge
1000 mA
P 300 mW
175 ˚C
˚C
T
j
T
stg
−65~+175
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Power dissipation
Junction temperature
Storage temperature
Surge current (1s)
Peak forward current
!
!!
!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
VF−−1.5 V
IR−−10 VR=220V
−−3pFV
R=0V, f=1MHz
trr −−75 ns
IF=200mA
IF=20mA, IR=20mA, RL=50Ω
µA
CT
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
1SS244
Diodes
!
!!
!Electrical characteristics curves (Ta=25°C)
0
75˚C
25˚C
−25˚C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.2
0.5
1
2
5
10
20
50
100
200
Ta=125˚C
FORWARD CURRENT : IF (mA)
FORWARD VOLTAGE : VF (V)
Fig.1 Forward characteristics
Fig.2 Reverse characteristics
0
100˚C
75˚C
50˚C
Ta=25˚C
50 100 150 200 250 300 350
10n
100n
1µ
10µ
REVERSE CURRENT : I
R
(A)
REVERSE VOLTAGE : V
R
(V)
1.1
1.0
0.9
0.8
0.7
0.6012345
REVERSE VOLTAGE : VR (V)
CAPACITANCE BETWEEN TERMINALS : C
T
(pF)
Fig.3 Capacitance between
terminals characteristics
0
I
R
=10mA
140
120
100
80
60
40
20
05 101520253035
I
rr
=1mA
REVERSE RECOVERY TIME : t
rr
(ns)
FORWARD CURRENT : I
F
(mA)
Fig.4 Reverse recovery time
characteristics
Fig.5 Surge current characteristics
14
12
10
8
6
4
2
01 10 100 1000
SURGE CURRENT : Isurge (A)
PULSE WIDTH : Tw (ms)
PULSE GENERATOR
OUTPUT 50ΩSAMPLING
OSCILLOSCOPE
50
Ω
0.01µFD.U.T.
5kΩ
Fig.6 Reverse recovery time (trr) measurement circuit
