2SK3691-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Symbol VDS VDSX ID ID(puls] VGS IAR EAS Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation dV DS /dt dV/dt PD Operating and Storage Temperature range Isolation Voltage Tch Tstg VISO EAR Ratings 600 600 4.5 18 30 4.5 261.1 2.8 Unit V V A A V A mJ mJ Equivalent circuit schematic Remarks Drain(D) VGS=-30V Gate(G) Note *1 Note *2 Note *3 Source(S) Note *1:Tch < = 150C,Repetitive and Non-repetitive Note *2:StartingTch=25C,IAS=1.8A,L=148mH, VCC=60V,RG=50 20 5 28 2.16 +150 -55 to +150 2 EAS limited by maximum channel temperature kV/s VDS< =600V and Avalanche current. kV/s Note *4 See to the `Avalanche Energy' graph Tc=25C W Note *3:Repetitive rating:Pulse width limited by Ta=25C maximum channel temperature. C See to the `Transient Thermal impedance' C graph. kVrms t=60sec. f=60Hz < -ID, -di/dt = 50A/s,VCC= < BVDSS,Tch= <150C Note *4:IF = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS Tch=25C VDS=600V VGS=0V Tch=125C VDS=480V VGS=0V VGS=30V VDS=0V ID=2.25A VGS=10V ID=2.25A VDS=25V VDS=25V VGS=0V f=1MH VCC=300V ID=2.25A VGS=10V Min. Typ. 600 3.0 2.5 RGS=10 VCC=300V ID=4.5A VGS=10V IF=4.5A VGS=0V Tch=25C IF=4.5A VGS=0V -di/dt=100A/s Tch=25C 10 1.8 5 400 60 3 18 4 30 5 15 5.5 3 1.00 0.7 3.5 Max. 5.0 25 250 100 2.3 600 90 5 27 6 45 7.5 23 8 4.5 1.50 Units V V A A nA S pF ns nC V s C Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 4.464 58 Units C/W C/W 1 2SK3691-01MR FUJI POWER MOSFET Characteristics 90 Allowable Power Dissipation PD=f(Tc) 8 80 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 20V 10V 8V 6.5V 7 70 6 60 ID [A] PD [W] 5 50 6.0V 4 40 3 30 2 20 VGS=5.5V 1 10 0 0 0 25 50 75 100 125 150 0 4 8 12 Tc [C] Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 10 1 10 gfs [S] ID[A] 16 20 24 VDS [V] Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 0.1 10 1 4.00 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=5.5V 3.75 10 ID [A] VGS[V] 6.0 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=2.25A,VGS=10V 5.5 6.0V 5.0 3.50 4.5 4.0 RDS(on) [ ] RDS(on) [ ] 3.25 6.5V 3.00 8V 2.75 10V 20V 2.50 3.5 3.0 max. 2.5 typ. 2.0 2.25 1.5 2.00 1.0 1.75 0.5 1.50 0.0 0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150 Tch [C] ID [A] http://store.iiic.cc/ 2 2SK3691-01MR 7.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=4.5A,Tch=25C 6.5 6.0 12 Vcc= 120V 5.5 max. 5.0 10 480V 4.5 4.0 VGS [V] VGS(th) [V] 300V 3.5 min. 3.0 8 6 2.5 4 2.0 1.5 2 1.0 0.5 0 0.0 -50 -25 0 25 50 75 100 125 0 150 5 10 Tch [C] 10 3 15 20 25 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C Ciss 2 IF [A] C [pF] 10 1 Coss 10 1 10 0 Crss 0 10 1 2 10 10 0.1 0.0 3 10 0.5 1.0 VDS [V] 10 3 1.5 2.0 VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 300 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=4.5A IAS=1.8A 250 tf 10 2 td(off) 200 EAV [mJ] t [ns] IAS=2.7A td(on) 10 1 150 IAS=4.5A 100 tr 50 10 0 0 10 -1 10 0 10 1 0 25 50 75 100 125 150 starting Tch [C] ID [A] http://store.iiic.cc/ 3 2SK3691-01MR FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=60V 1 10 Avalanche Current I AV [A] Single Pulse 0 10 10 -1 -2 10 -8 10 10 -7 -6 10 10 -5 -4 10 10 -3 10 -2 tAV [sec] 2 10 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 1 Zth(ch-c) [C/W] 10 0 10 -1 10 -2 10 -6 10 -5 10 -4 10 -3 10 10 -2 -1 10 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ http://store.iiic.cc/ 4