Preliminary: This document contains information an a new product. Specifications and information
contained herein are subject to change without notice.
HN62W448N Series
524288-word × 16-bit/1048576-word × 8-bit CMOS Mask
Programmable ROM
ADE-203-484(A) (Z)
Preliminary
Rev. 0.1
Jun. 20, 1996
Description
The Hitachi HN62W448N is a 8-Mbit CMOS mask-programmable ROM organized either as 524288-words
by 16-bits or as 1048576-words by 8-bits. Realizing low power consumption with low voltage operation, this
memory is allowed for battery operation. And low voltage high speed page access of 60/70 ns and normal
access of 120/150 ns are realized.
Features
• Low voltage operation : 3.3 V ± 0.3 V
• Access time:
Normal access time: 120/150 ns (max)
Page access time: 60/70 ns (max)
• Low power dissipation
Active: 220 mW (max)
Standby: 3 µW (max)
• Byte-wide or word-wide data organization (Switched by BHE terminal)
• 4-word page access mode
• Three-state data output for wired or-tying
• Directly LVTTL compatible (All inputs and outputs)
HN62W448N Series
2
Ordering Information
Type No. Access time Package
HN62W448NP-12
HN62W448NP-15 120 ns
150 ns 600mil 42-pin plastic DIP (DP-42)
HN62W448NFB-12
HN62W448NFB-15 120 ns
150 ns 44-pin plastic SOP (FP-44D)
HN62W448NTT-12
HN62W448NTT-15 120 ns
150 ns 44-pin plastic TSOP II (TTP-44D)
Pin Arrangement
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
NC
A8
A9
A10
A11
A12
A13
A14
A15
A16
BHE
V
D15/A-1
D7
D14
D6
D13
D5
D12
D4
V
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
V
OE
D0
D8
D1
D9
D2
D10
D3
D11
SS
DD
(Top view)
HN62W448NP Series
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
A8
A9
A10
A11
A12
A13
A14
A15
A16
BHE
V
D15/A-1
D7
D14
D6
D13
D5
D12
D4
V
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
V
OE
D0
D8
D1
D9
D2
D10
D3
D11
SS
DD
(Top view)
HN62W448NFB Series
SS
HN62W448N Series
3
Pin Arrangement (cont.)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
A8
A9
A10
A11
A12
A13
A14
A15
A16
BHE
V
D15/A-1
D7
D14
D6
D13
D5
D12
D4
V
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
V
OE
D0
D8
D1
D9
D2
D10
D3
D11
SS
DD
(Top view)
HN62W448NTT Series
SS
Pin Description
Pin name Function
A0 to A18 Address
D0 to D14 Output
D15/A-1 Output/address
OE Output enable
CE Chip enable
BHE Byte/word selection
VDD Power supply
VSS Ground
NC No connection
HN62W448N Series
4
Block Diagram
A0
to
A15
A16
to
A18
Y decoder
X decoder
Address
buffer
Memory array
3-state output
buffer
Y gates
Page decoder
Hex / byte
(A-1)
(A0, A1)
BHE
OE
CE
D0 to D15/(D7)
*1
BHE = V : 16-bit (D15 to D0)
BHE = V : 8-bit (D7 to D0)
IL
IH
Note: 1. A-1 is least significant address.
When BHE is 'low', D14 to D8 goes the high impedance state.
HN62W448N Series
5
Absolute Maximum Ratings
Parameter Symbol Value Unit Note
Supply voltage VDD –0.3 to +5.5 V 1
All input and output voltage Vin, Vout –0.3 to VDD +0.3 V 1
Operating temperature range Topr 0 to 70 °C
Storage temperature range Tstg –55 to +125 °C
Temperature under bias Tbias –20 to +85 °C
Note: 1. With respect to VSS.
Recommended DC Operating Conditions (Ta = 0 to +70°C)
Parameter Symbol Min Typ Max Unit
Supply voltage VDD 3.0 3.3 3.6 V
VSS 000V
Input voltage VIH 2.2 — VDD + 0.3 V
VIL –0.3 — 0.8 V
DC Characteristics (VDD = 3.3 V ± 0.3V, VSS = 0 V, Ta = 0 to +70°C)
Parameter Symbol Min Max Unit Test conditions
Supply current Active IDD —60mAV
DD = 3.6 V, IDOUT = 0 mA, tRC = 120/150 ns
Standby ISB1 —30µAV
DD = 3.6 V, CE ≥ VDD –0.2 V
Standby ISB2 — 3 mA VDD = 3.6 V, CE = 2.2 V
Input leakage current |IIL|—10µA Vin = 0 to VDD
Output leakage current |IOL|—10µACE = 2.2 V, VOUT = 0 to VDD
Output voltage VOH 2.4 — V IOH = –2.0 mA
VOL — 0.4 V IOL = 2.0 mA
Capacitance (VDD = 3.3 V ± 0.3V, VSS = 0 V, Ta = 25°C, Vin = 0 V, f = 1 MHz)
Parameter Symbol Min Max Unit
Input capacitance*1 Cin — 10 pF
Output capacitance*1 Cout — 15 pF
Note: 1. This parameter is periodically sampled and not 100% tested.
HN62W448N Series
6
AC Characteristics (VDD = 3.3 V ± 0.3V, VSS = 0 V, Ta = 0 to + 70°C)
• Output load: 1TTL gate + CL = 50 pF (including scope & jig)
• Input pulse levels: 0.4 to 2.4 V
• Input and output timing reference levels: 1.4V
• Input rise and fall time: 5 ns
HN62W448N-12 HN62W448N-15
Parameter Symbol Min Max Min Max Unit
Read cycle time tRC 120 — 150 — ns
Page read cycle time tPC 50 — 70 — ns
Address access time tAA — 120 — 150 ns
Page address access time tPA — 50 — 70 ns
CE access time tACE — 120 — 150 ns
OE access time tOE — 50 — 70 ns
BHE access time tBHE — 120 — 150 ns
Output hold time from address change tDHA 0—0—ns
Output hold time from CE tDHC 0—0—ns
Output hold time from OE tDHO 0—0—ns
Output hold time from BHE tDHB 0—0—ns
CE to output in high-Z tCHZ*1 — 50 — 70 ns
OE to output in high-Z tOHZ*1 — 50 — 70 ns
BHE to output in high-Z tBHZ*1 — 50 — 70 ns
CE to output in low-Z tCLZ 5—5—ns
OE to output in low-Z tOLZ 5—5—ns
BHE to output in low-Z tBLZ 5—5—ns
Note: 1. tCHZ, tOHZ and tBHZ are defined as the time at which the output achieves the open circuit conditions
and are not referred to output voltage levels.
HN62W448N Series
7
Timing Waveforms
Word Mode (BHE = 'VIH') or Byte Mode (BHE = 'VIL')
tRC
Address
CE
OE
Dout
tAA
tACE
tOE
tOLZ
tCHZ
tDHA
tDHC
tDHO
tCLZ
tOHZ
High-Z
Valid data
Notes: 1. tDHA, tDHC, tDHO: Determined by faster.
2. tAA, tACE, tOE: Determined by slower.
3. tCLZ, tOLZ: Determined by slower.
Word Mode, Byte Mode Switch
Address
tAA tDHA
tBHZ
tDHB
tBHE
tBLZ
BHE
D7 to D0
D15 to D8
Valid data Valid data
Valid data
High-Z
High-ZHigh-Z
Notes: 1. CE and OE are enable A18 to A0 are valid.
2. D15/A-1 pin is in the output state when BHE is high, CE and OE are enable.
Therefore, the input signals of opposite phase to the output must not be applied to them.
HN62W448N Series
8
Page Mode
tRC
tAA
tPC
tPA tPA tPA
tDHA tDHA tDHA tDHA
tPC tPC
A2 to A18
A0, A1, (A-1)
Valid data Valid
data Valid
data
Valid
data
Dout
Note: CE and OE are enable.
HN62W448N Series
9
Package Dimensions
HN62W448NP Series (DP-42) Unit: mm
2.54 Min 5.06 Max
0.25 + 0.26
– 0.05
2.54 ± 0.25 0.48 ± 0.10 0° – 15°
15.24
0.51 Min
52.80
53.80 Max
13.40
15.0 Max
1.20
42
121
22
1.3 Max
HN62W448NFB Series (FP-44D) Unit: mm
0.12 M
1.27
28.50
28.70 Max
44 23
221 16.04 ± 0.30
1.72
0 – 10°
0.80 ± 0.20
3.00 Max
0.19 ± 0.10 12.60
0.40 ± 0.10
0.17 ± 0.05
1.02 Max
0.10
HN62W448N Series
10
Package Dimensions (cont.)
HN62W448NTT Series (TTP-44D) Unit: mm
0.13 M
0.80
44 23
122
18.41
18.81 Max
0.30 ± 0.10
1.20 Max
10.16
0.17 ± 0.05
11.76 ± 0.20
0 – 5°
1.105 Max
0.50 ± 0.10
0.80
0.10
0.13 +0.03
–0.05
HN62W448N Series
11
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other
reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party or
Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such
use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested
to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
U S A
Tel: 415-589-8300
Fax: 415-583-4207
Hitachi Europe GmbH
Electronic Components Group
Continental Europe
Dornacher Straße 3
D-85622 Feldkirchen
München
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
Hitachi Europe Ltd.
Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA
United Kingdom
Tel: 0628-585000
Fax: 0628-778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 0104
Tel: 535-2100
Fax: 535-1533
Hitachi Asia (Hong Kong) Ltd.
Unit 706, North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel: 27359218
Fax: 27306071
HN62W448N Series
12
Revision Record
Rev. Date Contents of Modification Drawn by Approved by
0.0 Nov. 22, 1995 Initial issue Y. Yamada T. Wada
0.1 Jun. 20, 1996 AC Characteristics
Output load: 1TTL + CL = 100 pF to 1TTL + CL = 50 pF
tPC min: 60/70 ns to 50/70 ns
tPA, tOE, tCHZ, tOHZ, tBHZ max: 60/70 ns to 50/70 ns
Deletion of timing waveform for power up sequence
