EGP30GHE3/54 - Vishay Presicion Group

Document Number: 88584 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Glass Passivated Ultrafast Rectifier

EGP30A thru EGP30G

Vishay General Semiconductor

FEATURES

• Superectifier structure for high reliability condition

• Cavity-free glass-passivated junction

• Ultrafast reverse recovery time

• Low forward voltage drop

• Low leakage current

• Low switching losses, high efficiency

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer and telecommunication.

MECHANICAL DATA

Case: GP20, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

PRIMARY CHARACTERISTICS

IF(AV) 3.0 A

VRRM 50 V to 400 V

IFSM 125 A

trr 50 ns

VF0.95 V, 1.25 V

TJ max. 150 °C

GP20

SUPERECTIFIER

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G UNIT

Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 V

Maximum RMS voltage VRMS 35 70 105 140 210 280 V

Maximum DC blocking voltage VDC 50 100 150 200 300 400 V

Maximum average forward rectified current

0.375" (9.5 mm) lead length at TA = 55 °C IF(AV) 3.0 A

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load IFSM 125 A

Operating and storage temperature range TJ, TSTG - 65 to + 150 °C

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88584

2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

EGP30A thru EGP30G

Vishay General Semiconductor

Note

(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted

Note

(1) AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G UNIT

Maximum instantaneous

forward voltage 3.0 A VF0.95 1.25 V

Maximum DC

reverse current at rated

DC blocking voltage

TA = 25 °C

5.0

μA

TA = 125 °C 100

Maximum reverse

recovery time

IF = 0.5 A, IR = 1.0 A,

Irr = 0.25 A trr 50 ns

Typical junction

capacitance 4.0 V, 1 MHz CJ85 75 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G UNIT

Typical thermal resistance

RJA (1) 20

°C/W

RJL (1) 8.0

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

EGP30G-E3/54 1.01 54 1400 13" diameter paper tape and reel

EGP30G-E3/73 1.01 73 1000 Ammo pack packaging

EGP30GHE3/54 (1) 1.01 54 1400 13" diameter paper tape and reel

EGP30GHE3/73 (1) 1.01 73 1000 Ammo pack packaging

2.0

3.0

1.0

25 50 75 100 125 150 175

Average Forward Rectied Current (A)

Ambient Temperature (°C)

Resistive or Inductive Load

0.375" (9.5 mm) Lead Length

110 100

100

125

150

175

Number of Cycles at 60 Hz

Peak Forward Surge Current (A)

= T

Max.

8.3 ms Single Half Sine-Wave

Document Number: 88584 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

EGP30A thru EGP30G

Vishay General Semiconductor

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.01

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

0.1

100

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

TJ = 150 °C

TJ = 25 °C

Pulse Width = 300 μs

1 % Duty Cycle

EGP30A thru EGP30D

EGP30F and EGP30G

020 40 60 80

0.001

0.01

0.1

100

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Leakage

Current (μA)

= 150 °C

= 125 °C

= 25 °C

= 75 °C

120

150

180

210

1 10 100 1000

Reverse Voltage (V)

Junction Capacitance (pF)

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

EGP30A thru EGP30D

EGP30F and EGP30G

0.01 0.1 110 100

0.1

100

t - Pulse Duration (s)

Transient Thermal Impedance (°C/W)

GP20

1.0 (25.4)

MIN.

0.375 (9.5)

0.285 (7.2)

1.0 (25.4)

MIN.

0.210 (5.3)

0.190 (4.8)

DIA.

0.042 (1.07)

0.037 (0.94)

DIA.

Legal Disclaimer Notice

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Revision: 12-Mar-12 1Document Number: 91000

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