ON Semiconductor NPN TIP120 * TIP121* Plastic Medium-Power Complementary Silicon Transistors TIP122 * PNP TIP125 * . . . designed for general-purpose amplifier and low-speed switching applications. * High DC Current Gain -- * * * * hFE = 2500 (Typ) @ IC = 4.0 Adc Collector-Emitter Sustaining Voltage -- @ 100 mAdc VCEO(sus) = 60 Vdc (Min) -- TIP120, TIP125 = 80 Vdc (Min) -- TIP121, TIP126 = 100 Vdc (Min) -- TIP122, TIP127 Low Collector-Emitter Saturation Voltage -- VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc Monolithic Construction with Built-In Base-Emitter Shunt Resistors TO-220AB Compact Package TIP126 * TIP127 * *ON Semiconductor Preferred Device IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIII III IIII IIII III IIIIIIIIIII IIII III IIII IIII III IIIIIIIIIII IIII III IIII IIII III IIIIIIIIIII IIII III IIII IIII III IIIIIIIIIII IIII IIIIIIIII III III IIII IIII IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIII IIIII IIIIII III DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80-100 VOLTS 65 WATTS *MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Peak Base Current Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation @ TA = 25C Derate above 25C Unclamped Inductive Load Energy (1) Operating and Storage Junction, Temperature Range Symbol VCEO VCB TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 Unit 60 80 100 Vdc 60 80 100 Vdc VEB IC 5.0 Vdc 5.0 8.0 Adc 120 mAdc 65 0.52 Watts W/C 2.0 0.016 Watts W/C E 50 mJ TJ, Tstg -65 to +150 C IB PD PD 4 1 2 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 3 CASE 221A-09 TO-220AB THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 1.92 C/W 62.5 C/W Thermal Resistance, Junction to Ambient RJA (1) IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 . Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 April, 2002 - Rev. 5 1 Publication Order Number: TIP120/D TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 PD, POWER DISSIPATION (WATTS) TA TC 4.0 80 3.0 60 TC 2.0 40 TA 1.0 20 0 0 0 20 40 60 80 100 T, TEMPERATURE (C) 120 Figure 1. Power Derating http://onsemi.com 2 140 160 TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 60 80 100 -- -- -- -- -- -- 0.5 0.5 0.5 -- -- -- 0.2 0.2 0.2 -- 2.0 1000 1000 -- -- -- -- 2.0 4.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0) VCEO(sus) TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 Vdc ICEO mAdc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) mAdc IEBO mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 3.0 Adc, VCE = 3.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 12 mAdc) (IC = 5.0 Adc, IB = 20 mAdc) VCE(sat) Vdc Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc) VBE(on) -- 2.5 Vdc hfe 4.0 -- -- -- -- 300 200 DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz Cob pF TIP125, TIP126, TIP127 TIP120, TIP121, TIP122 (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5.0 V CC RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS -30 V D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA RC SCOPE MSD6100 USED BELOW IB 100 mA TUT RB 51 0 V1 approx -12 V D1 8.0 k 120 +4.0 V 25 s tr, tf 10 ns DUTY CYCLE = 1.0% PNP NPN ts 2.0 t, TIME (s) V2 approx +8.0 V 3.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities. tf 1.0 Figure 2. Switching Times Test Circuit VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 tr td @ VBE(off) = 0 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Switching Times http://onsemi.com 3 5.0 7.0 10 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.05 0.02 0.03 0.02 P(pk) ZJC(t) = r(t) RJC RJC = 1.92C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) ZJC(t) DUTY CYCLE, D = t1/t2 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 20 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown 100 s 10 500 s 5.0 dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED 1ms @ TC = 25C (SINGLE PULSE) 5ms SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 2.0 1.0 0.5 0.2 0.1 0.05 0.02 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 5. Active-Region Safe Operating Area 300 TJ = 25C 5000 3000 2000 200 C, CAPACITANCE (pF) h fe , SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TC = 25C VCE = 4.0 Vdc IC = 3.0 Adc 100 50 30 20 10 1.0 5.0 70 Cib 50 PNP NPN 2.0 Cob 100 10 20 50 100 f, FREQUENCY (kHz) 200 30 0.1 500 1000 Figure 6. Small-Signal Current Gain PNP NPN 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 50 100 TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 NPN TIP120, TIP121, TIP122 PNP TIP125, TIP126, TIP127 20,000 20,000 VCE = 4.0 V 5000 10,000 7000 5000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 10,000 TJ = 150C 3000 2000 25C 1000 -55C 500 300 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 3000 VCE = 4.0 V TJ = 150C 25C 2000 1000 700 500 -55C 300 200 0.1 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 3.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain TJ = 25C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 3.0 TJ = 25C IC = 2.0 A 2.6 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 Figure 9. Collector Saturation Region 3.0 3.0 TJ = 25C TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2.0 1.5 1.0 0.5 0.1 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 2.0 1.5 VBE @ VCE = 4.0 V 1.0 VBE(sat) @ IC/IB = 250 0.5 0.1 10 IC, COLLECTOR CURRENT (AMP) VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages http://onsemi.com 5 5.0 7.0 10 TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B SEATING PLANE C F T S 4 A Q 1 2 3 U H K Z L R V J G D N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 Notes http://onsemi.com 7 TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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