RURG8060 Data Sheet January 2002 80A, 600V Ultrafast Diode Features The RURG8060 is an ultrafast diode with soft recovery characteristics (trr < 75ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. * Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <75ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. * Avalanche Energy Rated Formerly developmental type TA09886. * General Purpose Ordering Information Packaging PART NUMBER RURG8060 PACKAGE TO-247 BRAND * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits JEDEC STYLE 2 LEAD TO-247 RURG8060 NOTE: When ordering, use the entire part number. Symbol ANODE CATHODE (BOTTOM SIDE METAL) CATHODE K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RURG8060 UNITS Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 600 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM 600 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 600 V Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 72oC) 80 A Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) 160 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) 800 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 180 W 50 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ -65 to 175 oC (c)2002 Fairchild Semiconductor Corporation RURG8060 Rev. B RURG8060 TC = 25oC, Unless Otherwise Specified Electrical Specifications SYMBOL TEST CONDITION MIN TYP MAX UNITS IF = 80A - - 1.6 V IF = 80A, TC = 150oC - - 1.4 V VR = 600V - - 250 A VR = 600V, TC = 150oC - - 2.0 mA IF = 1A, dIF/dt = 100A/s - - 75 ns IF = 80A, dIF/dt = 100A/s - - 85 ns ta IF = 80A, dIF/dt = 100A/s - 40 - ns tb IF = 80A, dIF/dt = 100A/s - 25 - ns - - 0.83 oC/W VF IR trr RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 6), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle. Typical Performance Curves 1000 175oC 100 IF, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 400 100oC 10 25oC 1 0 0.5 1.0 1.5 2.0 2.5 3.0 VF , FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE (c)2002 Fairchild Semiconductor Corporation 175oC 100 10 100oC 1 0.1 0.01 25oC 0 100 200 300 400 500 600 VF, REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE RURG8060 Rev. B RURG8060 (Continued) 80 60 t, TIME (ns) trr 40 ta 20 0 tb 1 10 80 IF(AV) , AVERAGE FORWARD CURRENT (A) Typical Performance Curves 100 80 DC 60 SQ. WAVE 40 20 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS I = 1.6A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT (c)2002 Fairchild Semiconductor Corporation t1 t2 t FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS RURG8060 Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4