DirectFET Power MOSFET
Description
The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF8301MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses and very high current carrying capability make this product ideal for power tools.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
DirectFET ISOMETRIC
MT
l Ultra-low RDS(on)
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra-low Package Inductance
l Optimized for high speed switching or high current
switch (Power Tool)
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
SQ SX ST MQ MX MT MP
0 102030405060
QG, Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
VGS, Gate-to-Source Voltage (V)
VDS= 24V
VDS= 15V
ID= 25A
VDSS VGS RDS(on) RDS(on)
30V max ±20V max 1.3mΩ@10V 1.9mΩ@ 4.5V
www.irf.com © 2013 International Rectifier September 6, 2013
1
StrongIRFET
IRF8301MTRPbF
Absolute Maximum Ratin
g
s
Parameter Units
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
e
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
e
A
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
f
I
DM
Pulsed Drain Current
g
E
AS
Sin
g
le Pulse Avalanche Ener
gy
h
mJ
I
AR
Avalanche Current
g
A25
Max.
27
192
250
±20
34
260
0 5 10 15 20
VGS, Gate -to -Source Voltage (V)
0
1
2
3
4
5
6
Typical RDS(on) (mΩ)
ID = 32A
TJ = 25°C
TJ = 125°C
Ordering Information
Orderable Part Number
Form Quantity
IRF8301MPbF DirectFET MT Tape and Reel 4800 IRF8301MTRPbF
Base Part Number Package Type Standard Pack
IRF8301MTRPbF
www.irf.com © 2013 International Rectifier September 6, 2013
2
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 21 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 1.3 1.5 mΩ
––– 1.9 2.4
V
GS(th)
Gate Threshold Voltage 1.35 1.7 2.35 V
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient ––– -6.0 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 150 ––– ––– S
Q
g
Total Gate Charge ––– 51 77
Q
g
s1
Pre-Vth Gate-to-Source Charge ––– 12 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 5.4 ––– nC
Q
gd
Gate-to-Drain Charge ––– 16 –––
Q
g
odr
Gate Charge Overdrive ––– 18 ––– See Fig. 15
Q
sw
Switch Charge (Q
gs2
+ Q
gd
) ––– 21 –––
Q
oss
Output Charge ––– 28 ––– nC
R
G
Gate Resistance ––– 1.0 3.0
Ω
t
d(on)
Turn-On Delay Time ––– 20 –––
t
r
Rise Time ––– 30 ––– ns
t
d
(
off
)
Turn-Off Delay Time ––– 25 –––
t
f
Fall Time ––– 17 –––
C
iss
Input Capacitance ––– 6140 –––
C
oss
Output Capacitance ––– 1270 ––– pF
C
rss
Reverse Transfer Capacitance ––– 590 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 110
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 250
(Body Diode)
g
V
SD
Diode Forward Voltage ––– 0.77 1.0 V
t
rr
Reverse Recovery Time ––– 27 41 ns
Q
rr
Reverse Recovery Charge ––– 45 68 nC
ƒ = 1.0MHz
V
DS
= 16V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 32A
i
V
GS
= 4.5V, I
D
= 25A
i
MOSFET symbol
R
G
= 1.8Ω
V
DS
= 15V, I
D
= 25A
Conditions
V
DS
= V
GS
, I
D
= 150µA
T
J
= 25°C, I
F
= 25A
V
GS
= 4.5V
I
D
= 25A
V
GS
= 0V
V
DS
= 15V
I
D
= 25A
V
DD
= 15V, V
GS
= 4.5V
i
V
GS
= 20V
V
GS
= -20V
di/dt = 500A/µs
i
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
i
showing the
integral reverse
p-n junction diode.
V
DS
= 24V, V
GS
= 0V
V
DS
= 15V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
See Fig. 17
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.82mH, RG = 25Ω, IAS = 25A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
IRF8301MTRPbF
www.irf.com © 2013 International Rectifier September 6, 20133
Absolute Maximum Ratin
g
s
Parameter Units
PD @TA = 25°C Power Dissipation
e
W
PD @TA = 70°C Power Dissipation
e
PD @TC = 25°C Power Dissipation
f
TP Peak Soldering Temperature °C
TJ Operating Junction and
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
RθJA Junction-to-Ambient
el
––– 45
RθJA Junction-to-Ambient
jl
12.5 –––
RθJA Junction-to-Ambient
kl
20 ––– °C/W
RθJC Junction-to-Case
fl
––– 1.4
RθJ-PCB Junction-to-PCB Mounted 1.0 –––
Linear Derating Factor
e
W/°C
0.022
270
-40 to + 150
Max.
89
2.8
1.8
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100 1000
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
Thermal Response ( Z thJA )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Fig 4. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
IRF8301MTRPbF
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4
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
Rθ is measured at TJ of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
IRF8301MTRPbF
www.irf.com © 2013 International Rectifier September 6, 20135
Fig 6. Typical Output Characteristics
Fig 5. Typical Output Characteristics
Fig 7. Typical Transfer Characteristics Fig 8. Normalized On-Resistance vs. Temperature
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage Fig 10. Typical On-Resistance vs.
Drain Current and Gate Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM 2.5V
≤60µs PULSE WIDTH
Tj = 25°C
2.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
2.5V
≤60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM 2.5V
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 150°C
TJ = 25°C
TJ = -40°C
VDS = 15V
≤60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
Typical RDS(on) (Normalized)
ID = 32A
VGS = 10V
VGS = 4.5V
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
050 100 150 200
ID, Drain Current (A)
0
1
2
3
4
5
Typical RDS(on) (mΩ)
TJ = 25°C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 8.0V
Vgs = 10V
IRF8301MTRPbF
www.irf.com © 2013 International Rectifier September 6, 2013
6
Fig 14. Typical Threshold Voltage vs. Junction
Temperature
Fig 13. Maximum Drain Current vs. Case Temperature
Fig 11. Typical Source-Drain Diode Forward Voltage Fig 12. Maximum Safe Operating Area
Fig 15. Maximum Avalanche Energy vs. Drain Current
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
0
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 150°C
TJ = 25°C
TJ = -40°C
VGS = 0V
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
3.0
Typical VGS(th) Gate threshold Voltage (V)
ID = 100µA
ID = 150µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
1200
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 2.7A
3.9A
BOTTOM 25A
25 50 75 100 125 150
TC , Case Temperature (°C)
0
40
80
120
160
200
ID, Drain Current (A)
0 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
Tc = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
DC
IRF8301MTRPbF
www.irf.com © 2013 International Rectifier September 6, 20137
Fig 16a. Gate Charge Test Circuit Fig 16b. Gate Charge Waveform
Fig 17b. Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
Fig 17a. Unclamped Inductive Test Circuit
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
1K
VCC
DUT
0
L
S
20K
VDS
90%
10%
VGS
t
d(on) trtd(off) tf
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
IRF8301MTRPbF
www.irf.com © 2013 International Rectifier September 6, 2013
8
Fig 19. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
*** VGS = 5V for Logic Level Devices
***
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
**
*
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
DirectFET Board Footprint, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
G
D
DD
D
S
S
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF8301MTRPbF
www.irf.com © 2013 International Rectifier September 6, 20139
DirectFET Part Marking
DirectFET Outline Dimension, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes
all recommendations for stencil and substrate designs.
MAX
0.250
0.199
0.156
0.018
0.032
0.036
0.072
0.040
0.026
0.039
0.104
0.0274
0.0031
0.007
MIN
6.25
4.80
3.85
0.35
0.78
0.88
1.78
0.98
0.63
0.88
2.46
0.616
0.020
0.08
MAX
6.35
5.05
3.95
0.45
0.82
0.92
1.82
1.02
0.67
1.01
2.63
0.676
0.080
0.17
MIN
0.246
0.189
0.152
0.014
0.031
0.035
0.070
0.039
0.025
0.035
0.097
0.0235
0.0008
0.003
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
DIMENSIONS
METRIC IMPERIAL
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF8301MTRPbF
www.irf.com © 2013 International Rectifier September 6, 2013
10
DirectFET Tape & Reel Dimension (Showing component orientation).
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
LOADED TAPE FEED DIRECTION
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
NOTE: CONTROLLING
DIMENSIONS IN MM CODE
A
B
C
D
E
F
G
H
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
1.60
MIN
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
0.063
DIMENSIONS
METRIC IMPERIAL
8301
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6726MTRPBF). For 1000 parts on 7"
IRF8301MTRPbF
D/E Dy D/E Dy
E E
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E E
E E
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Date Comments
09/05/2013 •
Added the StrongIRFET logo on the top of the part number, on page 1.
Revision History
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
International Rectifier:
IRF8301MTRPBF